NO902996L - Monokrystallinske silisiumkarbidfibre og deres fremstilling. - Google Patents

Monokrystallinske silisiumkarbidfibre og deres fremstilling.

Info

Publication number
NO902996L
NO902996L NO90902996A NO902996A NO902996L NO 902996 L NO902996 L NO 902996L NO 90902996 A NO90902996 A NO 90902996A NO 902996 A NO902996 A NO 902996A NO 902996 L NO902996 L NO 902996L
Authority
NO
Norway
Prior art keywords
fibers
preparation
monocrystalline silicon
silicon carbid
approximately
Prior art date
Application number
NO90902996A
Other languages
English (en)
Norwegian (no)
Other versions
NO902996D0 (no
Inventor
Jean-Pierre Disson
Roland Bachelard
Original Assignee
Atochem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atochem filed Critical Atochem
Publication of NO902996D0 publication Critical patent/NO902996D0/no
Publication of NO902996L publication Critical patent/NO902996L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/62—Whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Catalysts (AREA)
  • Inorganic Fibers (AREA)
  • Silicon Compounds (AREA)
  • Glass Compositions (AREA)
  • Ceramic Products (AREA)
NO90902996A 1989-07-06 1990-07-04 Monokrystallinske silisiumkarbidfibre og deres fremstilling. NO902996L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8909115A FR2649421A1 (fr) 1989-07-06 1989-07-06 Fibres monocristallines de carbure de silicium et leur procede de fabrication

Publications (2)

Publication Number Publication Date
NO902996D0 NO902996D0 (no) 1990-07-04
NO902996L true NO902996L (no) 1991-01-07

Family

ID=9383545

Family Applications (1)

Application Number Title Priority Date Filing Date
NO90902996A NO902996L (no) 1989-07-06 1990-07-04 Monokrystallinske silisiumkarbidfibre og deres fremstilling.

Country Status (12)

Country Link
EP (1) EP0407286B1 (de)
JP (1) JPH0383900A (de)
KR (1) KR910003160A (de)
CN (1) CN1048570A (de)
AT (1) ATE103644T1 (de)
AU (1) AU5869390A (de)
CA (1) CA2020495A1 (de)
DE (1) DE69007699T2 (de)
FR (1) FR2649421A1 (de)
IE (1) IE902439A1 (de)
IL (1) IL94787A0 (de)
NO (1) NO902996L (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU5436596A (en) 1995-03-31 1996-10-16 Hyperion Catalysis International, Inc. Carbide nanofibrils and method of making same
CN100378256C (zh) * 2006-09-13 2008-04-02 浙江理工大学 一种合成六棱柱状碳化硅纳米棒的方法
CN102021649B (zh) * 2010-12-24 2012-06-20 吉林大学 利用添加n2o气体化学气相沉积金刚石单晶的方法
CN102828249A (zh) * 2012-04-27 2012-12-19 中国人民解放军第二炮兵工程学院 一种在柔性碳纤维衬底上制备单晶碳化硅纳米线的方法
KR102017138B1 (ko) * 2018-09-20 2019-10-21 주식회사 와이컴 탄화규소 제품의 재생 방법 및 재생된 탄화규소 제품

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3840647A (en) * 1969-01-24 1974-10-08 Suwa Seikosha Kk Method for producing whiskers
US4283375A (en) * 1980-01-28 1981-08-11 Great Lakes Carbon Corporation Production of SiC whiskers
JPS6044280B2 (ja) * 1982-02-25 1985-10-02 東海カ−ボン株式会社 炭化けい素ウイスカ−の製造方法
JPS6052120B2 (ja) * 1982-06-04 1985-11-18 タテホ化学工業株式会社 炭化珪素の製造方法
JPS60260499A (ja) * 1984-06-07 1985-12-23 Idemitsu Kosan Co Ltd 炭化ケイ素ウイスカ−の製造方法
JPS6122000A (ja) * 1984-07-06 1986-01-30 Kanebo Ltd 炭化珪素ウイスカ−の製造法
JPS62260798A (ja) * 1986-05-06 1987-11-13 Kobe Steel Ltd 炭化ケイ素ウイスカ−の製造方法
JPH0633237B2 (ja) * 1986-10-17 1994-05-02 株式会社神戸製鋼所 高純度炭化ケイ素ウイスカ−の製造方法
US4873070A (en) * 1986-12-17 1989-10-10 Kabushiki Kaisha Kobe Seiko Sho Process for producing silicon carbide whiskers
US4789536A (en) * 1987-01-20 1988-12-06 J. M. Huber Corporation Process for producing silicon carbide whiskers
FR2611694B1 (fr) * 1987-02-23 1989-05-19 Pechiney Electrometallurgie Procede de preparation de trichites en carbure de silicium
JPH01290600A (ja) * 1988-05-17 1989-11-22 Mitsubishi Gas Chem Co Inc 炭化ケイ素ウィスカーの製造法

Also Published As

Publication number Publication date
FR2649421A1 (fr) 1991-01-11
ATE103644T1 (de) 1994-04-15
NO902996D0 (no) 1990-07-04
IL94787A0 (en) 1991-04-15
DE69007699D1 (de) 1994-05-05
IE902439A1 (en) 1991-06-19
AU5869390A (en) 1991-01-10
CN1048570A (zh) 1991-01-16
KR910003160A (ko) 1991-02-27
JPH0383900A (ja) 1991-04-09
EP0407286A1 (de) 1991-01-09
DE69007699T2 (de) 1994-09-08
EP0407286B1 (de) 1994-03-30
CA2020495A1 (fr) 1991-01-07

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