AU5869390A - Monocrystalline silicon carbide fibres and process for their manufacture - Google Patents
Monocrystalline silicon carbide fibres and process for their manufactureInfo
- Publication number
- AU5869390A AU5869390A AU58693/90A AU5869390A AU5869390A AU 5869390 A AU5869390 A AU 5869390A AU 58693/90 A AU58693/90 A AU 58693/90A AU 5869390 A AU5869390 A AU 5869390A AU 5869390 A AU5869390 A AU 5869390A
- Authority
- AU
- Australia
- Prior art keywords
- manufacture
- silicon carbide
- monocrystalline silicon
- carbide fibres
- approximately
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/62—Whiskers or needles
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/005—Growth of whiskers or needles
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
- Catalysts (AREA)
- Inorganic Fibers (AREA)
- Silicon Compounds (AREA)
- Glass Compositions (AREA)
- Ceramic Products (AREA)
Abstract
The fibres consist essentially of beta crystalline variety, are essentially rectilinear and have a mean diameter of between approximately 0.5 and approximately 4 mu m, a length of between 20 and 300 mu m and an aspect ratio higher than 20. The process for preparing them comprises the manufacture of granules based on silica, carbon black and catalyst and bringing them into contact with an atmosphere of hydrogen and nitrogen and/or ammonia.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8909115 | 1989-07-06 | ||
FR8909115A FR2649421A1 (en) | 1989-07-06 | 1989-07-06 | MONOCRYSTALLINE FIBERS OF SILICON CARBIDE AND METHOD FOR THE PRODUCTION THEREOF |
Publications (1)
Publication Number | Publication Date |
---|---|
AU5869390A true AU5869390A (en) | 1991-01-10 |
Family
ID=9383545
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU58693/90A Abandoned AU5869390A (en) | 1989-07-06 | 1990-07-05 | Monocrystalline silicon carbide fibres and process for their manufacture |
Country Status (12)
Country | Link |
---|---|
EP (1) | EP0407286B1 (en) |
JP (1) | JPH0383900A (en) |
KR (1) | KR910003160A (en) |
CN (1) | CN1048570A (en) |
AT (1) | ATE103644T1 (en) |
AU (1) | AU5869390A (en) |
CA (1) | CA2020495A1 (en) |
DE (1) | DE69007699T2 (en) |
FR (1) | FR2649421A1 (en) |
IE (1) | IE902439A1 (en) |
IL (1) | IL94787A0 (en) |
NO (1) | NO902996L (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1996030570A1 (en) * | 1995-03-31 | 1996-10-03 | Hyperion Catalysis International, Inc. | Carbide nanofibrils and method of making same |
CN100378256C (en) * | 2006-09-13 | 2008-04-02 | 浙江理工大学 | Method for synthesizing hexa-prism silicon carbide nano bar |
CN102021649B (en) * | 2010-12-24 | 2012-06-20 | 吉林大学 | Chemical vapor deposition method for preparing diamond single crystal by adding N2O gas |
CN102828249A (en) * | 2012-04-27 | 2012-12-19 | 中国人民解放军第二炮兵工程学院 | Method for preparing monocrystalline silicon carbide nano-wires on flexible carbon fiber substrate |
KR102017138B1 (en) * | 2018-09-20 | 2019-10-21 | 주식회사 와이컴 | Method for Recycling of SiC Product and Recycled SiC Product |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3840647A (en) * | 1969-01-24 | 1974-10-08 | Suwa Seikosha Kk | Method for producing whiskers |
US4283375A (en) * | 1980-01-28 | 1981-08-11 | Great Lakes Carbon Corporation | Production of SiC whiskers |
JPS6044280B2 (en) * | 1982-02-25 | 1985-10-02 | 東海カ−ボン株式会社 | Method for producing silicon carbide whiskers |
JPS6052120B2 (en) * | 1982-06-04 | 1985-11-18 | タテホ化学工業株式会社 | Silicon carbide manufacturing method |
JPS60260499A (en) * | 1984-06-07 | 1985-12-23 | Idemitsu Kosan Co Ltd | Preparation of sic whisker |
JPS6122000A (en) * | 1984-07-06 | 1986-01-30 | Kanebo Ltd | Preparation of silicon carbide whisker |
JPS62260798A (en) * | 1986-05-06 | 1987-11-13 | Kobe Steel Ltd | Production of silicon carbide whisker |
JPH0633237B2 (en) * | 1986-10-17 | 1994-05-02 | 株式会社神戸製鋼所 | Method for producing high-purity silicon carbide whisker |
US4873070A (en) * | 1986-12-17 | 1989-10-10 | Kabushiki Kaisha Kobe Seiko Sho | Process for producing silicon carbide whiskers |
US4789536A (en) * | 1987-01-20 | 1988-12-06 | J. M. Huber Corporation | Process for producing silicon carbide whiskers |
FR2611694B1 (en) * | 1987-02-23 | 1989-05-19 | Pechiney Electrometallurgie | PROCESS FOR THE PREPARATION OF SILICON CARBIDE TRICHITES |
JPH01290600A (en) * | 1988-05-17 | 1989-11-22 | Mitsubishi Gas Chem Co Inc | Production of silicon carbide whisker |
-
1989
- 1989-07-06 FR FR8909115A patent/FR2649421A1/en active Pending
-
1990
- 1990-06-19 IL IL94787A patent/IL94787A0/en unknown
- 1990-07-02 EP EP90401909A patent/EP0407286B1/en not_active Expired - Lifetime
- 1990-07-02 AT AT90401909T patent/ATE103644T1/en not_active IP Right Cessation
- 1990-07-02 DE DE69007699T patent/DE69007699T2/en not_active Expired - Fee Related
- 1990-07-04 NO NO90902996A patent/NO902996L/en unknown
- 1990-07-04 JP JP2177217A patent/JPH0383900A/en active Pending
- 1990-07-05 CA CA002020495A patent/CA2020495A1/en not_active Abandoned
- 1990-07-05 IE IE243990A patent/IE902439A1/en unknown
- 1990-07-05 AU AU58693/90A patent/AU5869390A/en not_active Abandoned
- 1990-07-06 CN CN90103398A patent/CN1048570A/en active Pending
- 1990-07-06 KR KR1019900010252A patent/KR910003160A/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
DE69007699D1 (en) | 1994-05-05 |
CA2020495A1 (en) | 1991-01-07 |
ATE103644T1 (en) | 1994-04-15 |
FR2649421A1 (en) | 1991-01-11 |
EP0407286B1 (en) | 1994-03-30 |
KR910003160A (en) | 1991-02-27 |
DE69007699T2 (en) | 1994-09-08 |
IL94787A0 (en) | 1991-04-15 |
CN1048570A (en) | 1991-01-16 |
NO902996D0 (en) | 1990-07-04 |
JPH0383900A (en) | 1991-04-09 |
NO902996L (en) | 1991-01-07 |
EP0407286A1 (en) | 1991-01-09 |
IE902439A1 (en) | 1991-06-19 |
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