ES2039468T3 - Polvos para ceramicas de nitruro de silicio por reduccion carbotermica y su procedimiento de fabricacion. - Google Patents
Polvos para ceramicas de nitruro de silicio por reduccion carbotermica y su procedimiento de fabricacion.Info
- Publication number
- ES2039468T3 ES2039468T3 ES198787400664T ES87400664T ES2039468T3 ES 2039468 T3 ES2039468 T3 ES 2039468T3 ES 198787400664 T ES198787400664 T ES 198787400664T ES 87400664 T ES87400664 T ES 87400664T ES 2039468 T3 ES2039468 T3 ES 2039468T3
- Authority
- ES
- Spain
- Prior art keywords
- powders
- silicon nitride
- manufacture
- carbotermic
- reduction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 4
- 239000000843 powder Substances 0.000 title abstract 4
- 229910052581 Si3N4 Inorganic materials 0.000 title abstract 3
- 239000000919 ceramic Substances 0.000 title abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 238000006722 reduction reaction Methods 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 2
- 239000008187 granular material Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 239000011230 binding agent Substances 0.000 abstract 1
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000005121 nitriding Methods 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 239000011148 porous material Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
- C01B21/0685—Preparation by carboreductive nitridation
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Products (AREA)
- Silicon Compounds (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Silicon Polymers (AREA)
Abstract
POLVOS DE NITRURO DE SILICIO SI3NA OBTENIDOSPOR VIA DE REDUCCION CARBOTERMICA Y NITRURACION DE SILICE, UTILIZABLES ESPECIALMENTE PARA LA FABRICACION DE MATERIALES CERAMICOS, QUE PRESENTAN UNA SUPERFICIE ESPECIFICA DE 30 M2/G, POR LO MENOS. PROCEDIMIENTO DE FABRICACION DE ESTOS POLVOS, QUE COMPRENDE LAS ETAPAS SIGUIENTES: A) A PARTIR DE SILICE, DE UN AGLOMERANTE QUE GENERA CARBONO, COMO MUY TARDE, EN EL MOMENTO DE LA REACCION DE REDUCCION CARBOTERMICA Y, LLEGADO ELCASO, DE CARBONO COMPLEMENTARIO, FABRICACION DE GRANULADOS DE UN VOLUMEN DE PORO CONTROLADO; B) REACCION DE REDUCCION CARBOTERMICA DE LOS GRANULADOS OBTENIDOS EN A, EN PRESENCIA DE UNA ATMOSFERA QUE CONTIENE NITROGENO; C) DESCARBURACION; D) OBTENCION DE POLVOS.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8604764A FR2596746B1 (fr) | 1986-04-03 | 1986-04-03 | Poudres pour ceramiques en nitrure de silicium par reduction carbothermique et leur procede de fabrication |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2039468T3 true ES2039468T3 (es) | 1993-10-01 |
Family
ID=9333845
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES198787400664T Expired - Lifetime ES2039468T3 (es) | 1986-04-03 | 1987-03-25 | Polvos para ceramicas de nitruro de silicio por reduccion carbotermica y su procedimiento de fabricacion. |
Country Status (12)
| Country | Link |
|---|---|
| EP (1) | EP0240414B1 (es) |
| JP (1) | JP2610867B2 (es) |
| CN (1) | CN1007888B (es) |
| AT (1) | ATE72204T1 (es) |
| AU (1) | AU603566B2 (es) |
| DE (1) | DE3776376D1 (es) |
| DK (1) | DK167865B1 (es) |
| ES (1) | ES2039468T3 (es) |
| FR (1) | FR2596746B1 (es) |
| GR (1) | GR3004228T3 (es) |
| IE (1) | IE59544B1 (es) |
| NO (1) | NO170208C (es) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2678602A1 (fr) * | 1991-07-02 | 1993-01-08 | Atochem | Procede de preparation de nitrure de silicium par carbonitruration de silice et nitrure de silicium sous forme de particules exemptes de whiskers. |
| JP4844709B2 (ja) * | 2005-03-18 | 2011-12-28 | 戸田工業株式会社 | 窒化ケイ素粉末の製造法 |
| BR112012010277B1 (pt) * | 2009-10-30 | 2020-09-29 | Alcoa Usa Corp | Método para produzir pó de diboreto de titânio |
| CN106348762B (zh) * | 2016-08-23 | 2019-02-05 | 安徽科创中光科技有限公司 | 一种用于激光设备的氮化硅粉体的合成方法 |
| CN111555114A (zh) * | 2020-05-11 | 2020-08-18 | 欧菲微电子技术有限公司 | 垂直腔面发射激光器、制备方法及摄像头模组 |
| CN116813354B (zh) * | 2023-06-06 | 2024-10-18 | 东莞理工学院 | 一种原位制备氮化硅陶瓷的方法、制得的氮化硅陶瓷及其应用 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1028977A (en) * | 1962-02-24 | 1966-05-11 | Eric Campbell Shears | Improvements in or relating to the manufacture of silicon nitride and oxynitride |
| DE2800174A1 (de) * | 1978-01-03 | 1979-07-12 | Max Planck Gesellschaft | Verfahren zum sintern von siliciumnitrid-formkoerpern |
| JPS6036311A (ja) * | 1983-08-08 | 1985-02-25 | Nippon Cement Co Ltd | α型窒化けい素の製造方法 |
| US4626422A (en) * | 1985-06-24 | 1986-12-02 | Gte Products Corporation | High purity high surface area silicon nitride |
-
1986
- 1986-04-03 FR FR8604764A patent/FR2596746B1/fr not_active Expired
-
1987
- 1987-03-23 IE IE75587A patent/IE59544B1/en not_active IP Right Cessation
- 1987-03-25 AT AT87400664T patent/ATE72204T1/de not_active IP Right Cessation
- 1987-03-25 DE DE8787400664T patent/DE3776376D1/de not_active Expired - Fee Related
- 1987-03-25 ES ES198787400664T patent/ES2039468T3/es not_active Expired - Lifetime
- 1987-03-25 EP EP19870400664 patent/EP0240414B1/fr not_active Expired - Lifetime
- 1987-04-01 JP JP62082177A patent/JP2610867B2/ja not_active Expired - Lifetime
- 1987-04-02 DK DK168087A patent/DK167865B1/da not_active IP Right Cessation
- 1987-04-02 NO NO871373A patent/NO170208C/no unknown
- 1987-04-03 AU AU71037/87A patent/AU603566B2/en not_active Ceased
- 1987-04-03 CN CN87102970A patent/CN1007888B/zh not_active Expired
-
1992
- 1992-04-01 GR GR920400598T patent/GR3004228T3/el unknown
Also Published As
| Publication number | Publication date |
|---|---|
| IE59544B1 (en) | 1994-03-09 |
| GR3004228T3 (es) | 1993-03-31 |
| DK167865B1 (da) | 1993-12-27 |
| NO170208C (no) | 1992-09-23 |
| IE870755L (en) | 1987-10-03 |
| AU7103787A (en) | 1987-10-08 |
| FR2596746B1 (fr) | 1988-06-03 |
| CN1007888B (zh) | 1990-05-09 |
| DK168087D0 (da) | 1987-04-02 |
| JPS62241810A (ja) | 1987-10-22 |
| NO871373L (no) | 1987-10-05 |
| NO871373D0 (no) | 1987-04-02 |
| DK168087A (da) | 1987-10-04 |
| AU603566B2 (en) | 1990-11-22 |
| EP0240414A1 (fr) | 1987-10-07 |
| JP2610867B2 (ja) | 1997-05-14 |
| CN87102970A (zh) | 1987-10-21 |
| NO170208B (no) | 1992-06-15 |
| ATE72204T1 (de) | 1992-02-15 |
| EP0240414B1 (fr) | 1992-01-29 |
| FR2596746A1 (fr) | 1987-10-09 |
| DE3776376D1 (de) | 1992-03-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG2A | Definitive protection |
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