NO794182L - Forstoevningskatode. - Google Patents

Forstoevningskatode.

Info

Publication number
NO794182L
NO794182L NO794182A NO794182A NO794182L NO 794182 L NO794182 L NO 794182L NO 794182 A NO794182 A NO 794182A NO 794182 A NO794182 A NO 794182A NO 794182 L NO794182 L NO 794182L
Authority
NO
Norway
Prior art keywords
sections
cathode
plasma
glass
laterally spaced
Prior art date
Application number
NO794182A
Other languages
English (en)
Other versions
NO152979C (no
NO152979B (no
Inventor
Douglas L Chambers
Chong T Wan
Original Assignee
Advanced Coating Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Coating Tech filed Critical Advanced Coating Tech
Publication of NO794182L publication Critical patent/NO794182L/no
Publication of NO152979B publication Critical patent/NO152979B/no
Publication of NO152979C publication Critical patent/NO152979C/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/3277—Continuous moving of continuous material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
NO794182A 1978-12-20 1979-12-19 Anordning ved forstoevningskatode og system for paafoering av belegg paa store substratarealer. NO152979C (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/971,196 US4194962A (en) 1978-12-20 1978-12-20 Cathode for sputtering

Publications (3)

Publication Number Publication Date
NO794182L true NO794182L (no) 1980-06-23
NO152979B NO152979B (no) 1985-09-16
NO152979C NO152979C (no) 1985-12-27

Family

ID=25518049

Family Applications (1)

Application Number Title Priority Date Filing Date
NO794182A NO152979C (no) 1978-12-20 1979-12-19 Anordning ved forstoevningskatode og system for paafoering av belegg paa store substratarealer.

Country Status (12)

Country Link
US (1) US4194962A (no)
EP (1) EP0014819B1 (no)
JP (1) JPS5585673A (no)
AT (1) ATE3228T1 (no)
BR (1) BR7908323A (no)
CA (1) CA1133424A (no)
DE (1) DE2965330D1 (no)
DK (1) DK157563C (no)
ES (1) ES487573A0 (no)
FI (1) FI63600C (no)
IE (1) IE49129B1 (no)
NO (1) NO152979C (no)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4265729A (en) * 1978-09-27 1981-05-05 Vac-Tec Systems, Inc. Magnetically enhanced sputtering device
US4309261A (en) * 1980-07-03 1982-01-05 University Of Sydney Method of and apparatus for reactively sputtering a graded surface coating onto a substrate
US4290877A (en) * 1980-09-08 1981-09-22 The United States Of America As Represented By The Secretary Of The Interior Sputtering apparatus for coating elongated tubes and strips
US4361472A (en) * 1980-09-15 1982-11-30 Vac-Tec Systems, Inc. Sputtering method and apparatus utilizing improved ion source
JPS57190320A (en) * 1981-05-20 1982-11-22 Toshiba Corp Dry etching method
US4422896A (en) * 1982-01-26 1983-12-27 Materials Research Corporation Magnetically enhanced plasma process and apparatus
US4525262A (en) * 1982-01-26 1985-06-25 Materials Research Corporation Magnetron reactive bias sputtering method and apparatus
US4486289A (en) * 1982-02-05 1984-12-04 University Of British Columbia, Canada Planar magnetron sputtering device
US4415427A (en) * 1982-09-30 1983-11-15 Gte Products Corporation Thin film deposition by sputtering
US4437966A (en) * 1982-09-30 1984-03-20 Gte Products Corporation Sputtering cathode apparatus
US4581118A (en) * 1983-01-26 1986-04-08 Materials Research Corporation Shaped field magnetron electrode
US4597847A (en) * 1984-10-09 1986-07-01 Iodep, Inc. Non-magnetic sputtering target
US5215639A (en) * 1984-10-09 1993-06-01 Genus, Inc. Composite sputtering target structures and process for producing such structures
US4828668A (en) * 1986-03-10 1989-05-09 Semiconductor Energy Laboratory Co., Ltd. Sputtering system for deposition on parallel substrates
FR2596920A1 (fr) * 1986-04-03 1987-10-09 Saint Roch Sa Glaceries Cathode de pulverisation
US4812217A (en) * 1987-04-27 1989-03-14 American Telephone And Telegraph Company, At&T Bell Laboratories Method and apparatus for feeding and coating articles in a controlled atmosphere
JPH0351971Y2 (no) * 1988-05-12 1991-11-08
US4915805A (en) * 1988-11-21 1990-04-10 At&T Bell Laboratories Hollow cathode type magnetron apparatus construction
DE3938267C2 (de) * 1989-11-17 1997-03-27 Leybold Ag Vorrichtung zum Heizen von Substraten
DE4135939A1 (de) * 1991-10-31 1993-05-06 Leybold Ag, 6450 Hanau, De Zerstaeubungskathode
US5322606A (en) * 1991-12-26 1994-06-21 Xerox Corporation Use of rotary solenoid as a shutter actuator on a rotating arm
KR100327716B1 (ko) * 1994-01-11 2002-06-27 노만 에이취. 폰드 진공처리시스템및진공처리시스템내에서의기판조작방법
JPH07316810A (ja) * 1994-05-27 1995-12-05 Fuji Xerox Co Ltd スパッタリング装置
DE4428136A1 (de) * 1994-08-09 1996-02-15 Leybold Ag Vakuum-Beschichtungsanlage
DE19853943B4 (de) * 1997-11-26 2006-04-20 Vapor Technologies, Inc. (Delaware Corporation), Longmont Katode zur Zerstäubung oder Bogenaufdampfung sowie Vorrichtung zur Beschichtung oder Ionenimplantation mit einer solchen Katode
US5997705A (en) * 1999-04-14 1999-12-07 Vapor Technologies, Inc. Rectangular filtered arc plasma source
US6309516B1 (en) 1999-05-07 2001-10-30 Seagate Technology Llc Method and apparatus for metal allot sputtering
US7678198B2 (en) * 2004-08-12 2010-03-16 Cardinal Cg Company Vertical-offset coater
WO2006028774A2 (en) * 2004-09-03 2006-03-16 Cardinal Cg Company Coater having interrupted conveyor system
US7498587B2 (en) * 2006-05-01 2009-03-03 Vapor Technologies, Inc. Bi-directional filtered arc plasma source
CN101636521B (zh) * 2007-03-16 2013-07-24 国立大学法人东北大学 磁控溅射装置
DE112008000765T5 (de) * 2007-03-30 2010-04-29 National University Corporation Tohoku University, Sendai Drehmagnet-Sputter-Vorrichtung
DE102007052524B4 (de) * 2007-11-01 2012-05-31 Von Ardenne Anlagentechnik Gmbh Transportmittel und Vakuumbeschichtungsanlage für Substrate unterschiedlicher Größe
US8842357B2 (en) 2008-12-31 2014-09-23 View, Inc. Electrochromic device and method for making electrochromic device
US8432603B2 (en) * 2009-03-31 2013-04-30 View, Inc. Electrochromic devices
US9966242B2 (en) * 2014-09-29 2018-05-08 Xinsheng Guo High throughput vacuum deposition sources and system

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
LU45647A1 (no) * 1964-03-12 1965-09-13
FR2132033B1 (no) * 1971-04-02 1975-10-24 Delog Detag Flachglas Ag
GB1391842A (en) * 1971-08-04 1975-04-23 Elektromat Veb Apparatus for coating substrates by cathode sputtering and for cleaning by ion bombardment in the same vacuum vessel
US4041353A (en) * 1971-09-07 1977-08-09 Telic Corporation Glow discharge method and apparatus
US3878085A (en) * 1973-07-05 1975-04-15 Sloan Technology Corp Cathode sputtering apparatus
US3956093A (en) * 1974-12-16 1976-05-11 Airco, Inc. Planar magnetron sputtering method and apparatus
US4013532A (en) * 1975-03-03 1977-03-22 Airco, Inc. Method for coating a substrate
DE2655942A1 (de) * 1976-12-10 1978-06-15 Tokuda Seisakusho Kawasaki Kk Zerstaeubungsvorrichtung
US4126530A (en) * 1977-08-04 1978-11-21 Telic Corporation Method and apparatus for sputter cleaning and bias sputtering
US4116806A (en) * 1977-12-08 1978-09-26 Battelle Development Corporation Two-sided planar magnetron sputtering apparatus

Also Published As

Publication number Publication date
DE2965330D1 (en) 1983-06-09
DK157563B (da) 1990-01-22
EP0014819A1 (en) 1980-09-03
BR7908323A (pt) 1980-09-16
ES8101129A1 (es) 1980-12-16
NO152979C (no) 1985-12-27
FI63600C (fi) 1983-07-11
JPS5585673A (en) 1980-06-27
ATE3228T1 (de) 1983-05-15
ES487573A0 (es) 1980-12-16
US4194962A (en) 1980-03-25
DK543679A (da) 1980-06-21
CA1133424A (en) 1982-10-12
FI793982A (fi) 1980-06-21
IE792464L (en) 1980-06-20
IE49129B1 (en) 1985-08-07
EP0014819B1 (en) 1983-05-04
FI63600B (fi) 1983-03-31
DK157563C (da) 1990-06-18
NO152979B (no) 1985-09-16

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