NO320516B1 - Halvledende trykksensor - Google Patents
Halvledende trykksensor Download PDFInfo
- Publication number
- NO320516B1 NO320516B1 NO20003985A NO20003985A NO320516B1 NO 320516 B1 NO320516 B1 NO 320516B1 NO 20003985 A NO20003985 A NO 20003985A NO 20003985 A NO20003985 A NO 20003985A NO 320516 B1 NO320516 B1 NO 320516B1
- Authority
- NO
- Norway
- Prior art keywords
- layer
- semi
- pressure sensor
- insulating layer
- conductive layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 36
- 239000012528 membrane Substances 0.000 claims description 32
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 28
- 229910052681 coesite Inorganic materials 0.000 claims description 19
- 229910052906 cristobalite Inorganic materials 0.000 claims description 19
- 229910052682 stishovite Inorganic materials 0.000 claims description 19
- 229910052905 tridymite Inorganic materials 0.000 claims description 19
- 239000000377 silicon dioxide Substances 0.000 claims description 17
- 235000012239 silicon dioxide Nutrition 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 description 19
- 229910004298 SiO 2 Inorganic materials 0.000 description 13
- 230000000694 effects Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 239000012212 insulator Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34992798A JP3506932B2 (ja) | 1998-12-09 | 1998-12-09 | 半導体圧力センサ及びその製造方法 |
| PCT/JP1999/006751 WO2000034754A1 (fr) | 1998-12-09 | 1999-12-02 | Capteur de pression a semi-conducteurs et son procede de fabrication |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NO20003985D0 NO20003985D0 (no) | 2000-08-07 |
| NO20003985L NO20003985L (no) | 2000-10-09 |
| NO320516B1 true NO320516B1 (no) | 2005-12-12 |
Family
ID=18407058
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO20003985A NO320516B1 (no) | 1998-12-09 | 2000-08-07 | Halvledende trykksensor |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6619133B1 (fr) |
| EP (1) | EP1055920A4 (fr) |
| JP (1) | JP3506932B2 (fr) |
| KR (1) | KR100462569B1 (fr) |
| CN (1) | CN1138135C (fr) |
| CA (1) | CA2319570C (fr) |
| NO (1) | NO320516B1 (fr) |
| WO (1) | WO2000034754A1 (fr) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007516746A (ja) * | 2003-12-11 | 2007-06-28 | プロテウス バイオメディカル インコーポレイテッド | 移植可能な圧力センサ |
| DE102005004603B3 (de) * | 2005-02-01 | 2006-06-08 | Siemens Ag | Kraftsensor |
| US7219021B2 (en) * | 2005-09-13 | 2007-05-15 | Honeywell International Inc. | Multiple wireless sensors for dialysis application |
| KR101007432B1 (ko) * | 2005-11-15 | 2011-01-12 | 미쓰비시덴키 가부시키가이샤 | 반도체 압력 센서 및 그 제조 방법 |
| KR100773759B1 (ko) * | 2006-03-27 | 2007-11-09 | 한국기계연구원 | 마이크로 압력센서 |
| EP1953516B1 (fr) * | 2007-01-31 | 2011-03-09 | Infineon Technologies AG | Capteur de pression micromécanique |
| JP4925306B2 (ja) | 2007-02-28 | 2012-04-25 | 株式会社山武 | 圧力センサ |
| JP4916006B2 (ja) | 2007-02-28 | 2012-04-11 | 株式会社山武 | 圧力センサ |
| DE102007010913A1 (de) * | 2007-03-05 | 2008-09-11 | Endress + Hauser Gmbh + Co. Kg | Drucksensor |
| US7571650B2 (en) * | 2007-07-30 | 2009-08-11 | Hewlett-Packard Development Company, L.P. | Piezo resistive pressure sensor |
| WO2009041463A1 (fr) * | 2007-09-25 | 2009-04-02 | Alps Electric Co., Ltd. | Capteur de pression à semi-conducteur |
| JP4600468B2 (ja) * | 2007-12-10 | 2010-12-15 | セイコーエプソン株式会社 | 半導体圧力センサ及びその製造方法、半導体装置並びに電子機器 |
| JP5357469B2 (ja) * | 2008-05-23 | 2013-12-04 | アルプス電気株式会社 | 半導体圧力センサ |
| JP5067584B2 (ja) | 2009-03-02 | 2012-11-07 | オムロン株式会社 | 半導体センサ及びその製造方法 |
| JP5286153B2 (ja) * | 2009-04-28 | 2013-09-11 | アズビル株式会社 | 圧力センサの製造方法 |
| US8569092B2 (en) * | 2009-12-28 | 2013-10-29 | General Electric Company | Method for fabricating a microelectromechanical sensor with a piezoresistive type readout |
| ITFI20110090A1 (it) * | 2011-05-02 | 2012-11-03 | Mattia Glauber | Venous reservoir with an integrated pressure measurement/visualization system.reservoir venoso avente un sistema integrato di misurazione / visualizzazione della pressione. |
| US8556394B2 (en) | 2011-07-27 | 2013-10-15 | Hewlett-Packard Development Company, L.P. | Ink supply |
| US10322481B2 (en) * | 2014-03-06 | 2019-06-18 | Infineon Technologies Ag | Support structure and method of forming a support structure |
| JP6218330B2 (ja) * | 2014-07-04 | 2017-10-25 | アルプス電気株式会社 | 圧力センサ及びその製造方法 |
| WO2017158845A1 (fr) * | 2016-03-18 | 2017-09-21 | 株式会社日立製作所 | Procédé de production de dispositif à membrane, dispositif à membrane et dispositif nanoporeux |
| CN105783993B (zh) * | 2016-03-21 | 2018-01-30 | 安徽工程大学 | 集成温度相对湿度传感器 |
| DE102017210691A1 (de) | 2017-06-26 | 2018-12-27 | Robert Bosch Gmbh | Verfahren zur Herstellung von mikromechanischen Sensoren |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5938744B2 (ja) * | 1976-09-29 | 1984-09-19 | 株式会社デンソー | 圧力−電気変換装置およびその製造方法 |
| JPS5938744A (ja) | 1982-08-30 | 1984-03-02 | Konishiroku Photo Ind Co Ltd | デイスクフイルム等の位置合わせ方法 |
| JP2770362B2 (ja) * | 1989-01-11 | 1998-07-02 | 三菱電機株式会社 | 半導体圧力センサの製造方法 |
| US4996627A (en) * | 1989-01-30 | 1991-02-26 | Dresser Industries, Inc. | High sensitivity miniature pressure transducer |
| JPH02281760A (ja) | 1989-04-24 | 1990-11-19 | Fujikura Ltd | 単結晶薄模部材の製造方法 |
| JPH03248474A (ja) | 1990-02-26 | 1991-11-06 | Mitsubishi Electric Corp | 半導体圧力センサおよびその製造方法 |
| JP2918299B2 (ja) * | 1990-06-25 | 1999-07-12 | 沖電気工業株式会社 | 半導体圧力センサおよびそれを有する半導体装置の製造方法 |
| US5225377A (en) | 1991-05-03 | 1993-07-06 | Honeywell Inc. | Method for micromachining semiconductor material |
| JPH05190872A (ja) * | 1992-01-16 | 1993-07-30 | Oki Electric Ind Co Ltd | 半導体圧力センサおよびその製造方法 |
| JP3428179B2 (ja) | 1994-10-12 | 2003-07-22 | 株式会社デンソー | 半導体ダイヤフラム構造および半導体ダイヤフラム製造方法 |
| US5770883A (en) * | 1995-09-19 | 1998-06-23 | Nippondenso Co., Ltd. | Semiconductor sensor with a built-in amplification circuit |
| US6284670B1 (en) * | 1997-07-23 | 2001-09-04 | Denso Corporation | Method of etching silicon wafer and silicon wafer |
-
1998
- 1998-12-09 JP JP34992798A patent/JP3506932B2/ja not_active Expired - Lifetime
-
1999
- 1999-12-02 US US09/622,271 patent/US6619133B1/en not_active Expired - Lifetime
- 1999-12-02 KR KR10-2000-7008559A patent/KR100462569B1/ko active IP Right Grant
- 1999-12-02 WO PCT/JP1999/006751 patent/WO2000034754A1/fr not_active Application Discontinuation
- 1999-12-02 EP EP99973325A patent/EP1055920A4/fr not_active Ceased
- 1999-12-02 CA CA002319570A patent/CA2319570C/fr not_active Expired - Lifetime
- 1999-12-02 CN CNB998038962A patent/CN1138135C/zh not_active Expired - Lifetime
-
2000
- 2000-08-07 NO NO20003985A patent/NO320516B1/no not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000171318A (ja) | 2000-06-23 |
| KR100462569B1 (ko) | 2004-12-17 |
| KR20010040683A (ko) | 2001-05-15 |
| WO2000034754A1 (fr) | 2000-06-15 |
| EP1055920A4 (fr) | 2007-07-25 |
| EP1055920A1 (fr) | 2000-11-29 |
| CN1138135C (zh) | 2004-02-11 |
| NO20003985D0 (no) | 2000-08-07 |
| CA2319570A1 (fr) | 2000-06-15 |
| US6619133B1 (en) | 2003-09-16 |
| JP3506932B2 (ja) | 2004-03-15 |
| NO20003985L (no) | 2000-10-09 |
| CA2319570C (fr) | 2004-08-24 |
| CN1292868A (zh) | 2001-04-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK1K | Patent expired |