NO20003985L - Halvledende trykksensor - Google Patents

Halvledende trykksensor

Info

Publication number
NO20003985L
NO20003985L NO20003985A NO20003985A NO20003985L NO 20003985 L NO20003985 L NO 20003985L NO 20003985 A NO20003985 A NO 20003985A NO 20003985 A NO20003985 A NO 20003985A NO 20003985 L NO20003985 L NO 20003985L
Authority
NO
Norway
Prior art keywords
pressure sensor
semiconductor pressure
semiconductor
sensor
pressure
Prior art date
Application number
NO20003985A
Other languages
English (en)
Other versions
NO20003985D0 (no
NO320516B1 (no
Inventor
Yasuhiro Goshoo
Hirofumi Toujou
Masayuki Yoneda
Takeshi Fukiura
Original Assignee
Yamatake Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yamatake Corp filed Critical Yamatake Corp
Publication of NO20003985D0 publication Critical patent/NO20003985D0/no
Publication of NO20003985L publication Critical patent/NO20003985L/no
Publication of NO320516B1 publication Critical patent/NO320516B1/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
NO20003985A 1998-12-09 2000-08-07 Halvledende trykksensor NO320516B1 (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP34992798A JP3506932B2 (ja) 1998-12-09 1998-12-09 半導体圧力センサ及びその製造方法
PCT/JP1999/006751 WO2000034754A1 (fr) 1998-12-09 1999-12-02 Capteur de pression a semi-conducteurs et son procede de fabrication

Publications (3)

Publication Number Publication Date
NO20003985D0 NO20003985D0 (no) 2000-08-07
NO20003985L true NO20003985L (no) 2000-10-09
NO320516B1 NO320516B1 (no) 2005-12-12

Family

ID=18407058

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20003985A NO320516B1 (no) 1998-12-09 2000-08-07 Halvledende trykksensor

Country Status (8)

Country Link
US (1) US6619133B1 (no)
EP (1) EP1055920A4 (no)
JP (1) JP3506932B2 (no)
KR (1) KR100462569B1 (no)
CN (1) CN1138135C (no)
CA (1) CA2319570C (no)
NO (1) NO320516B1 (no)
WO (1) WO2000034754A1 (no)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1692457A4 (en) * 2003-12-11 2007-09-26 Proteus Biomedical Inc IMPLANT PRESSURE SENSORS
DE102005004603B3 (de) * 2005-02-01 2006-06-08 Siemens Ag Kraftsensor
US7219021B2 (en) * 2005-09-13 2007-05-15 Honeywell International Inc. Multiple wireless sensors for dialysis application
JP4916449B2 (ja) * 2005-11-15 2012-04-11 三菱電機株式会社 半導体圧力センサおよびその製造方法
KR100773759B1 (ko) * 2006-03-27 2007-11-09 한국기계연구원 마이크로 압력센서
DE602007012995D1 (de) * 2007-01-31 2011-04-21 Infineon Technologies Ag Mikromechanischer Drucksensor
JP4916006B2 (ja) 2007-02-28 2012-04-11 株式会社山武 圧力センサ
JP4925306B2 (ja) 2007-02-28 2012-04-25 株式会社山武 圧力センサ
DE102007010913A1 (de) * 2007-03-05 2008-09-11 Endress + Hauser Gmbh + Co. Kg Drucksensor
US7571650B2 (en) * 2007-07-30 2009-08-11 Hewlett-Packard Development Company, L.P. Piezo resistive pressure sensor
JP4918140B2 (ja) * 2007-09-25 2012-04-18 アルプス電気株式会社 半導体圧力センサ
JP4600468B2 (ja) * 2007-12-10 2010-12-15 セイコーエプソン株式会社 半導体圧力センサ及びその製造方法、半導体装置並びに電子機器
JP5357469B2 (ja) * 2008-05-23 2013-12-04 アルプス電気株式会社 半導体圧力センサ
JP5067584B2 (ja) * 2009-03-02 2012-11-07 オムロン株式会社 半導体センサ及びその製造方法
JP5286153B2 (ja) * 2009-04-28 2013-09-11 アズビル株式会社 圧力センサの製造方法
US8569092B2 (en) * 2009-12-28 2013-10-29 General Electric Company Method for fabricating a microelectromechanical sensor with a piezoresistive type readout
ITFI20110090A1 (it) * 2011-05-02 2012-11-03 Mattia Glauber Venous reservoir with an integrated pressure measurement/visualization system.reservoir venoso avente un sistema integrato di misurazione / visualizzazione della pressione.
US8556394B2 (en) 2011-07-27 2013-10-15 Hewlett-Packard Development Company, L.P. Ink supply
US10322481B2 (en) * 2014-03-06 2019-06-18 Infineon Technologies Ag Support structure and method of forming a support structure
JP6218330B2 (ja) * 2014-07-04 2017-10-25 アルプス電気株式会社 圧力センサ及びその製造方法
WO2017158845A1 (ja) * 2016-03-18 2017-09-21 株式会社日立製作所 メンブレンデバイスの製造方法、メンブレンデバイス、および、ナノポアデバイス
CN105783993B (zh) * 2016-03-21 2018-01-30 安徽工程大学 集成温度相对湿度传感器
DE102017210691A1 (de) * 2017-06-26 2018-12-27 Robert Bosch Gmbh Verfahren zur Herstellung von mikromechanischen Sensoren

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5938744B2 (ja) * 1976-09-29 1984-09-19 株式会社デンソー 圧力−電気変換装置およびその製造方法
JPS5938744A (ja) 1982-08-30 1984-03-02 Konishiroku Photo Ind Co Ltd デイスクフイルム等の位置合わせ方法
JP2770362B2 (ja) * 1989-01-11 1998-07-02 三菱電機株式会社 半導体圧力センサの製造方法
US4996627A (en) * 1989-01-30 1991-02-26 Dresser Industries, Inc. High sensitivity miniature pressure transducer
JPH02281760A (ja) * 1989-04-24 1990-11-19 Fujikura Ltd 単結晶薄模部材の製造方法
JPH03248474A (ja) * 1990-02-26 1991-11-06 Mitsubishi Electric Corp 半導体圧力センサおよびその製造方法
JP2918299B2 (ja) * 1990-06-25 1999-07-12 沖電気工業株式会社 半導体圧力センサおよびそれを有する半導体装置の製造方法
US5225377A (en) * 1991-05-03 1993-07-06 Honeywell Inc. Method for micromachining semiconductor material
JPH05190872A (ja) * 1992-01-16 1993-07-30 Oki Electric Ind Co Ltd 半導体圧力センサおよびその製造方法
JP3428179B2 (ja) * 1994-10-12 2003-07-22 株式会社デンソー 半導体ダイヤフラム構造および半導体ダイヤフラム製造方法
DE19638373B8 (de) * 1995-09-19 2007-08-09 Denso Corp., Kariya Halbleitersensor und sein Herstellungsverfahren
US6284670B1 (en) * 1997-07-23 2001-09-04 Denso Corporation Method of etching silicon wafer and silicon wafer

Also Published As

Publication number Publication date
EP1055920A4 (en) 2007-07-25
CN1138135C (zh) 2004-02-11
CA2319570C (en) 2004-08-24
EP1055920A1 (en) 2000-11-29
CA2319570A1 (en) 2000-06-15
JP2000171318A (ja) 2000-06-23
CN1292868A (zh) 2001-04-25
NO20003985D0 (no) 2000-08-07
US6619133B1 (en) 2003-09-16
JP3506932B2 (ja) 2004-03-15
NO320516B1 (no) 2005-12-12
WO2000034754A1 (fr) 2000-06-15
KR20010040683A (ko) 2001-05-15
KR100462569B1 (ko) 2004-12-17

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