NO20091286L - Krystallfabrikasjon - Google Patents

Krystallfabrikasjon

Info

Publication number
NO20091286L
NO20091286L NO20091286A NO20091286A NO20091286L NO 20091286 L NO20091286 L NO 20091286L NO 20091286 A NO20091286 A NO 20091286A NO 20091286 A NO20091286 A NO 20091286A NO 20091286 L NO20091286 L NO 20091286L
Authority
NO
Norway
Prior art keywords
crystal fabrication
fabrication
crystal
Prior art date
Application number
NO20091286A
Other languages
English (en)
Other versions
NO346806B1 (no
Inventor
Olli Anttila
Ari Saarnikko
Jari Paloheimo
Original Assignee
Okmetic Oyj
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Okmetic Oyj filed Critical Okmetic Oyj
Publication of NO20091286L publication Critical patent/NO20091286L/no
Publication of NO346806B1 publication Critical patent/NO346806B1/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/104—Means for forming a hollow structure [e.g., tube, polygon]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Steroid Compounds (AREA)
NO20091286A 2006-09-01 2007-08-31 Krystallfabrikasjon NO346806B1 (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/514,177 US8152921B2 (en) 2006-09-01 2006-09-01 Crystal manufacturing
PCT/FI2007/000217 WO2008025872A2 (en) 2006-09-01 2007-08-31 Crystal manufacturing

Publications (2)

Publication Number Publication Date
NO20091286L true NO20091286L (no) 2009-05-29
NO346806B1 NO346806B1 (no) 2023-01-16

Family

ID=38691083

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20091286A NO346806B1 (no) 2006-09-01 2007-08-31 Krystallfabrikasjon

Country Status (10)

Country Link
US (2) US8152921B2 (no)
EP (1) EP2057305B1 (no)
JP (1) JP5707040B2 (no)
KR (1) KR101472330B1 (no)
CN (1) CN101548031B (no)
CA (1) CA2664325C (no)
NO (1) NO346806B1 (no)
RU (1) RU2456386C2 (no)
TW (1) TWI468561B (no)
WO (1) WO2008025872A2 (no)

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JP4730937B2 (ja) * 2004-12-13 2011-07-20 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体単結晶製造装置および製造方法
US8152921B2 (en) * 2006-09-01 2012-04-10 Okmetic Oyj Crystal manufacturing
DE102006060359B4 (de) * 2006-12-20 2013-09-05 Siltronic Ag Verfahren und Vorrichtung zur Herstellung von Halbleiterscheiben aus Silicium
TW200914371A (en) * 2007-06-01 2009-04-01 Gt Solar Inc Processing of fine silicon powder to produce bulk silicon
KR20170109081A (ko) * 2009-09-02 2017-09-27 지티에이티 코포레이션 조절된 압력하에서 헬륨을 사용하는 고온 처리 방법
JP5392040B2 (ja) 2009-12-04 2014-01-22 信越半導体株式会社 単結晶製造装置及び単結晶製造方法
KR101218852B1 (ko) * 2010-01-05 2013-01-18 주식회사 엘지실트론 단결정 성장장치의 단열장치 및 이를 포함하는 단결정 성장장치
CN101914808A (zh) * 2010-07-19 2010-12-15 常州天合光能有限公司 可消除挥发份在热屏外侧沉积的单晶炉热场
TW201224230A (en) * 2010-10-21 2012-06-16 Advanced Renewable Energy Company Llc Intermediate materials and methods for high-temperature applications
CN101979720A (zh) * 2010-11-30 2011-02-23 奥特斯维能源（太仓）有限公司 一种单晶炉热场
JP2013053017A (ja) * 2011-09-01 2013-03-21 Shin Etsu Handotai Co Ltd 単結晶育成装置
JP5470349B2 (ja) * 2011-10-17 2014-04-16 ジルトロニック アクチエンゲゼルシャフト ｐ型シリコン単結晶およびその製造方法
US9206525B2 (en) 2011-11-30 2015-12-08 General Electric Company Method for configuring a system to grow a crystal by coupling a heat transfer device comprising at least one elongate member beneath a crucible
JP5776587B2 (ja) * 2012-02-24 2015-09-09 信越半導体株式会社 単結晶製造方法
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JP2014094842A (ja) * 2012-11-07 2014-05-22 Shin Etsu Handotai Co Ltd 単結晶製造装置
CN105051267B (zh) * 2013-01-23 2018-07-06 Lg矽得荣株式会社 单晶体生长设备
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KR101530274B1 (ko) * 2013-08-27 2015-06-23 주식회사 엘지실트론 잉곳성장장치 및 잉곳성장방법
CN105002556A (zh) * 2014-04-21 2015-10-28 洛阳金诺机械工程有限公司 一种拉制硅芯时提高硅芯结晶速度的装置
TWI633612B (zh) * 2014-06-19 2018-08-21 蘭姆研究股份公司 用以與處理晶圓狀物件用之設備一起使用的收集器
US10358740B2 (en) * 2014-07-25 2019-07-23 Corner Star Limited Crystal growing systems and methods including a passive heater
CN104651934B (zh) * 2014-10-17 2017-12-01 洛阳西格马炉业股份有限公司 一种节能型蓝宝石晶体生长炉
DE102014226297A1 (de) * 2014-12-17 2016-06-23 Sgl Carbon Se Doppelwandiger Graphit-Trichter
US11313049B2 (en) * 2015-10-19 2022-04-26 Globalwafers Co., Ltd. Crystal pulling systems and methods for producing monocrystalline ingots with reduced edge band defects
CN105369346A (zh) * 2015-12-09 2016-03-02 天津市环欧半导体材料技术有限公司 一种直拉重掺砷低电阻硅单晶的装置
CN105525342A (zh) * 2015-12-22 2016-04-27 英利集团有限公司 一种直拉法制备大尺寸单晶硅棒的方法及单晶炉
US10487418B2 (en) 2016-01-06 2019-11-26 Globalwafers Co., Ltd. Seed chuck assemblies and crystal pulling systems for reducing deposit build-up during crystal growth process
JP6304424B1 (ja) 2017-04-05 2018-04-04 株式会社Sumco 熱遮蔽部材、単結晶引き上げ装置および単結晶シリコンインゴットの製造方法
JP6828674B2 (ja) * 2017-12-20 2021-02-10 株式会社Sumco クリーニング方法、シリコン単結晶の製造方法、および、クリーニング装置
CN109309035A (zh) * 2018-11-08 2019-02-05 德淮半导体有限公司 半导体工艺腔室及其形成方法、半导体工艺装置
CN111519241B (zh) * 2019-02-01 2021-12-17 上海新昇半导体科技有限公司 一种半导体晶体生长装置
CN109943882A (zh) * 2019-03-28 2019-06-28 浙江晶鸿精密机械制造有限公司 一种应用于单晶炉一体式水冷套结构
US11534967B2 (en) 2019-12-12 2022-12-27 Arcam Ab Additive manufacturing apparatuses with powder distributors and methods of use
CN111254486A (zh) * 2020-05-06 2020-06-09 眉山博雅新材料有限公司 一种晶体制备装置
EP4130349A4 (en) 2020-05-06 2023-10-18 Meishan Boya Advanced Materials Co., Ltd. CRYSTAL PRODUCTION APPARATUS AND GROWTH METHOD
JP7432734B2 (ja) * 2020-08-10 2024-02-16 西安奕斯偉材料科技股▲ふん▼有限公司 単結晶炉の組立スリーブ及び単結晶炉
US20220145492A1 (en) * 2020-11-12 2022-05-12 GlobalWaters Co., Ltd. Ingot puller apparatus having a heat shield disposed below a side heater and methods for preparing an ingot with such apparatus
CN114318510B (zh) * 2021-12-30 2023-09-19 无锡晶名光电科技有限公司 锑化铟晶体生长方法及晶体生长炉
CN115074829B (zh) * 2022-07-13 2024-01-26 西安奕斯伟材料科技股份有限公司 拉晶炉
CN115506017B (zh) * 2022-10-27 2024-09-13 中环领先(徐州)半导体材料有限公司 单晶硅生长炉及其控制方法
CN116043329B (zh) * 2023-03-31 2023-05-30 苏州晨晖智能设备有限公司 一种具有氩气定位导向功能的单晶炉
CN117305972B (zh) * 2023-11-28 2024-02-13 内蒙古鼎泰万邦新材料有限公司 一种单晶炉

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Also Published As

Publication number Publication date
RU2456386C2 (ru) 2012-07-20
CN101548031A (zh) 2009-09-30
EP2057305B1 (en) 2014-12-10
EP2057305A2 (en) 2009-05-13
TW200817537A (en) 2008-04-16
US20080053372A1 (en) 2008-03-06
TWI468561B (zh) 2015-01-11
KR101472330B1 (ko) 2014-12-12
WO2008025872A2 (en) 2008-03-06
CA2664325A1 (en) 2008-03-06
JP5707040B2 (ja) 2015-04-22
CN101548031B (zh) 2014-07-16
KR20090058009A (ko) 2009-06-08
RU2009110967A (ru) 2010-10-10
US8152921B2 (en) 2012-04-10
JP2010501466A (ja) 2010-01-21
WO2008025872A3 (en) 2008-10-02
CA2664325C (en) 2015-02-24
NO346806B1 (no) 2023-01-16
US8641820B2 (en) 2014-02-04
US20120217446A1 (en) 2012-08-30

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