NO20070622L - Susceptor - Google Patents

Susceptor

Info

Publication number
NO20070622L
NO20070622L NO20070622A NO20070622A NO20070622L NO 20070622 L NO20070622 L NO 20070622L NO 20070622 A NO20070622 A NO 20070622A NO 20070622 A NO20070622 A NO 20070622A NO 20070622 L NO20070622 L NO 20070622L
Authority
NO
Norway
Prior art keywords
wafer
susceptor
silicon carbide
graphite material
material covered
Prior art date
Application number
NO20070622A
Other languages
English (en)
Norwegian (no)
Inventor
Ichiro Fujita
Hirokazu Fujiwara
Original Assignee
Toyo Tanso Vo Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Tanso Vo Ltd filed Critical Toyo Tanso Vo Ltd
Publication of NO20070622L publication Critical patent/NO20070622L/no

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2255—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident ion beams, e.g. proton beams
    • G01N23/2258—Measuring secondary ion emission, e.g. secondary ion mass spectrometry [SIMS]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Mechanical Engineering (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
NO20070622A 2004-07-22 2007-02-02 Susceptor NO20070622L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004213845 2004-07-22
PCT/JP2005/012215 WO2006008941A1 (fr) 2004-07-22 2005-07-01 Compensateur

Publications (1)

Publication Number Publication Date
NO20070622L true NO20070622L (no) 2007-04-23

Family

ID=35785061

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20070622A NO20070622L (no) 2004-07-22 2007-02-02 Susceptor

Country Status (7)

Country Link
US (1) US9612215B2 (fr)
EP (1) EP1790757B1 (fr)
CN (1) CN101001978B (fr)
HK (1) HK1106557A1 (fr)
NO (1) NO20070622L (fr)
TW (1) TWI388686B (fr)
WO (1) WO2006008941A1 (fr)

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US8816258B2 (en) * 2011-12-08 2014-08-26 Intermolecular, Inc. Segmented susceptor for temperature uniformity correction and optimization in an inductive heating system
KR101928356B1 (ko) * 2012-02-16 2018-12-12 엘지이노텍 주식회사 반도체 제조 장치
JP5880297B2 (ja) * 2012-06-07 2016-03-08 三菱電機株式会社 基板支持体、半導体製造装置
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
CN104968634B (zh) * 2013-02-06 2018-04-10 东洋炭素株式会社 碳化硅‑碳化钽复合材料和基座
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
TWI533401B (zh) * 2013-08-29 2016-05-11 Bridgestone Corp 晶座
JP6226648B2 (ja) * 2013-09-04 2017-11-08 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造方法
ITCO20130041A1 (it) * 2013-09-27 2015-03-28 Lpe Spa Suscettore con elemento di supporto
ITCO20130040A1 (it) * 2013-09-27 2015-03-28 Lpe Spa Suscettore ricoperto
JP6097681B2 (ja) * 2013-12-24 2017-03-15 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造装置およびＳｉＣエピタキシャルウェハの製造方法
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DE102014109327A1 (de) * 2014-07-03 2016-01-07 Aixtron Se Beschichtetes flaches scheibenförmiges Bauteil in einem CVD-Reaktor
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
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CN105702561B (zh) * 2014-12-12 2018-09-18 韩国东海炭素株式会社 半导体处理组件再生方法
CN106337204B (zh) * 2015-07-17 2018-11-06 中国科学院苏州纳米技术与纳米仿生研究所 石墨托以及装有石墨托的晶体生长炉
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ITUB20154925A1 (it) * 2015-11-03 2017-05-03 L P E S P A Suscettore con recessi asimmetrici, reattore per deposizione epitassiale e metodo di produzione
DE102016111236A1 (de) * 2016-06-20 2017-12-21 Heraeus Noblelight Gmbh Substrat-Trägerelement für eine Trägerhorde, sowie Trägerhorde und Vorrichtung mit dem Substrat-Trägerelement
WO2019078036A1 (fr) * 2017-10-18 2019-04-25 新日本テクノカーボン株式会社 Suscepteur
CN109896515B (zh) * 2017-12-04 2023-12-22 信越化学工业株式会社 覆碳化钽的碳材料和其制造方法、半导体单晶制造装置用构件
JP7242987B2 (ja) * 2018-09-06 2023-03-22 株式会社レゾナック ＳｉＣ単結晶製造装置
JP1648519S (fr) * 2018-10-04 2019-12-23
JP6550198B1 (ja) 2019-02-28 2019-07-24 株式会社アドマップ ＳｉＣ膜構造体
CN110129768B (zh) * 2019-04-22 2020-08-14 华为技术有限公司 一种用于金属有机物化学气相沉积的承载盘
WO2020252306A1 (fr) 2019-06-14 2020-12-17 Silcotek Corp. Croissance de nanofils
WO2020255698A1 (fr) 2019-06-19 2020-12-24 住友電気工業株式会社 Substrat épitaxial de carbure de silicium
US11581213B2 (en) * 2020-09-23 2023-02-14 Applied Materials, Inc. Susceptor wafer chucks for bowed wafers
CN215757604U (zh) * 2021-01-25 2022-02-08 苏州晶湛半导体有限公司 石墨盘
US20220411959A1 (en) * 2021-06-24 2022-12-29 Coorstek Kk Susceptor and manufacturing method thereof
JP7285890B2 (ja) 2021-08-04 2023-06-02 株式会社レゾナック ＳｉＣエピタキシャルウェハ及びＳｉＣエピタキシャルウェハの製造方法

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Also Published As

Publication number Publication date
US20080035632A1 (en) 2008-02-14
US9612215B2 (en) 2017-04-04
TWI388686B (zh) 2013-03-11
HK1106557A1 (en) 2008-03-14
WO2006008941A1 (fr) 2006-01-26
EP1790757A1 (fr) 2007-05-30
EP1790757B1 (fr) 2013-08-14
CN101001978B (zh) 2010-10-13
EP1790757A4 (fr) 2007-10-31
CN101001978A (zh) 2007-07-18
TW200606274A (en) 2006-02-16

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