NO20064056L - Mikroelektronisk rensesammensetning inneholdende halogenoksygensyrer, salter og derivater derav - Google Patents
Mikroelektronisk rensesammensetning inneholdende halogenoksygensyrer, salter og derivater deravInfo
- Publication number
- NO20064056L NO20064056L NO20064056A NO20064056A NO20064056L NO 20064056 L NO20064056 L NO 20064056L NO 20064056 A NO20064056 A NO 20064056A NO 20064056 A NO20064056 A NO 20064056A NO 20064056 L NO20064056 L NO 20064056L
- Authority
- NO
- Norway
- Prior art keywords
- microelectronic
- derivatives
- salts
- composition containing
- cleaning compositions
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US54380104P | 2004-02-11 | 2004-02-11 | |
PCT/US2004/037135 WO2005083523A1 (en) | 2004-02-11 | 2004-11-05 | Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
NO20064056L true NO20064056L (no) | 2006-11-07 |
Family
ID=34700209
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO20064056A NO20064056L (no) | 2004-02-11 | 2006-09-08 | Mikroelektronisk rensesammensetning inneholdende halogenoksygensyrer, salter og derivater derav |
Country Status (19)
Country | Link |
---|---|
US (1) | US7521406B2 (de) |
EP (1) | EP1564595B1 (de) |
JP (3) | JP4208826B2 (de) |
KR (2) | KR101316993B1 (de) |
CN (3) | CN101923294B (de) |
AT (1) | ATE449362T1 (de) |
BR (1) | BRPI0418529A (de) |
CA (1) | CA2555665C (de) |
DE (1) | DE602005017684D1 (de) |
DK (1) | DK1564595T3 (de) |
ES (1) | ES2334359T3 (de) |
IL (1) | IL177305A (de) |
NO (1) | NO20064056L (de) |
PL (1) | PL1564595T3 (de) |
PT (1) | PT1564595E (de) |
SG (1) | SG150508A1 (de) |
TW (1) | TWI318238B (de) |
WO (1) | WO2005083523A1 (de) |
ZA (1) | ZA200606544B (de) |
Families Citing this family (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1664935B1 (de) * | 2003-08-19 | 2007-10-17 | Mallinckrodt Baker, Inc. | Ablös- und reinigungszusammensetzungen für die mikroelektronik |
EP1680806A4 (de) * | 2003-10-28 | 2008-07-30 | Sachem Inc | Reinigungslösungen und ätzmittel und verfahren zu ihrer verwendung |
US7521406B2 (en) | 2004-02-11 | 2009-04-21 | Mallinckrodt Baker, Inc | Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof |
US8338087B2 (en) * | 2004-03-03 | 2012-12-25 | Advanced Technology Materials, Inc | Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate |
US20060154186A1 (en) * | 2005-01-07 | 2006-07-13 | Advanced Technology Materials, Inc. | Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings |
US7867779B2 (en) | 2005-02-03 | 2011-01-11 | Air Products And Chemicals, Inc. | System and method comprising same for measurement and/or analysis of particles in gas stream |
KR20080023214A (ko) * | 2005-04-08 | 2008-03-12 | 사켐,인코포레이티드 | 금속 질화물의 선택적인 습식 에칭 |
US8772214B2 (en) * | 2005-10-14 | 2014-07-08 | Air Products And Chemicals, Inc. | Aqueous cleaning composition for removing residues and method using same |
US7977228B2 (en) * | 2006-06-29 | 2011-07-12 | Intel Corporation | Methods for the formation of interconnects separated by air gaps |
KR20090076938A (ko) * | 2006-09-25 | 2009-07-13 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 웨이퍼 재작업 적용을 위한 포토레지스트의 제거를 위한 조성물 및 방법 |
US20100081595A1 (en) * | 2007-01-22 | 2010-04-01 | Freescale Semiconductor, Inc | Liquid cleaning composition and method for cleaning semiconductor devices |
US20090241988A1 (en) * | 2008-03-31 | 2009-10-01 | Intel Corporation | Photoresist and antireflective layer removal solution and method thereof |
US8026200B2 (en) * | 2008-05-01 | 2011-09-27 | Advanced Technology Materials, Inc. | Low pH mixtures for the removal of high density implanted resist |
MX2011008789A (es) * | 2009-02-25 | 2011-09-29 | Avantor Performance Mat Inc | Composiciones removedoras para limpiar polimero fotosensible implantado ionicamente de obleas de dispositivos semiconductores. |
CA2753399A1 (en) * | 2009-02-25 | 2010-09-02 | Avantor Performance Materials, Inc. | Multipurpose acidic, organic solvent based microelectronic cleaning composition |
JP2012531734A (ja) * | 2009-06-25 | 2012-12-10 | ラム・リサーチ・アーゲー | 半導体ウエハを処理するための方法 |
JP2012531735A (ja) | 2009-06-25 | 2012-12-10 | ラム・リサーチ・アーゲー | 半導体ウエハを処理するための方法 |
US7994062B2 (en) * | 2009-10-30 | 2011-08-09 | Sachem, Inc. | Selective silicon etch process |
JP2011179085A (ja) * | 2010-03-02 | 2011-09-15 | C Uyemura & Co Ltd | 電気めっき用前処理剤、電気めっきの前処理方法及び電気めっき方法 |
US20110253171A1 (en) * | 2010-04-15 | 2011-10-20 | John Moore | Chemical Composition and Methods for Removing Epoxy-Based Photoimageable Coatings Utilized In Microelectronic Fabrication |
TWI619800B (zh) | 2010-10-06 | 2018-04-01 | 恩特葛瑞斯股份有限公司 | 選擇性蝕刻金屬氮化物之組成物及方法 |
CN102199499B (zh) * | 2011-04-02 | 2013-01-16 | 浙江向日葵光能科技股份有限公司 | 太阳能电池硅片清洗剂及其使用方法 |
EP2557147B1 (de) * | 2011-08-09 | 2015-04-01 | Basf Se | Wässrige basische Lösung und Verfahren zur Behandlung der Oberfläche von Siliziumsubstraten |
US9257270B2 (en) * | 2011-08-15 | 2016-02-09 | Ekc Technology | Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material |
TW201406932A (zh) * | 2012-05-18 | 2014-02-16 | Advanced Tech Materials | 用於自包含氮化鈦之表面脫除光阻劑之組成物及方法 |
JP6157081B2 (ja) * | 2012-09-24 | 2017-07-05 | 東京応化工業株式会社 | フォトリソグラフィ用剥離液、及びパターン形成方法 |
JP6029419B2 (ja) * | 2012-11-02 | 2016-11-24 | ダイキン工業株式会社 | 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法 |
CN103809394B (zh) * | 2012-11-12 | 2019-12-31 | 安集微电子科技(上海)股份有限公司 | 一种去除光阻蚀刻残留物的清洗液 |
WO2014089196A1 (en) * | 2012-12-05 | 2014-06-12 | Advanced Technology Materials, Inc. | Compositions for cleaning iii-v semiconductor materials and methods of using same |
CN103275823A (zh) * | 2013-05-29 | 2013-09-04 | 苏州康和顺医疗技术有限公司 | 一种用于全自动生化分析仪的清洗剂及其制备方法 |
CN111394100A (zh) * | 2013-06-06 | 2020-07-10 | 恩特格里斯公司 | 用于选择性蚀刻氮化钛的组合物和方法 |
EP3039098B1 (de) | 2013-08-30 | 2020-09-30 | Entegris, Inc. | Zusammensetzungen und verfahren zum selektiven ätzen von titannitrid |
US9957469B2 (en) | 2014-07-14 | 2018-05-01 | Versum Materials Us, Llc | Copper corrosion inhibition system |
KR102405631B1 (ko) * | 2014-11-13 | 2022-06-07 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 탄탈을 포함하는 재료의 데미지를 억제한 반도체소자의 세정액, 및 이를 이용한 세정방법 |
JP6217659B2 (ja) * | 2015-01-28 | 2017-10-25 | ダイキン工業株式会社 | 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法 |
TWI840319B (zh) | 2016-03-24 | 2024-05-01 | 美商艾萬拓有限責任公司 | 與鎢相容且具金屬氮化物選擇性之非水性蝕刻劑及清潔劑 |
CN107357143B (zh) | 2017-07-25 | 2018-06-19 | 上海新阳半导体材料股份有限公司 | 一种清洗剂、其制备方法和应用 |
US11353794B2 (en) * | 2017-12-22 | 2022-06-07 | Versum Materials Us, Llc | Photoresist stripper |
CN109980174A (zh) * | 2017-12-27 | 2019-07-05 | 中国电子科技集团公司第十八研究所 | 提高电池热熔性聚合物铜箔表面附着力方法及表面处理剂 |
EP3726565A4 (de) | 2018-01-16 | 2021-10-13 | Tokuyama Corporation | Hypochloritonen-haltige behandlungsflüssigkeit für halbleiterwafer |
EP3773616A4 (de) * | 2018-04-12 | 2022-07-27 | Briotech, Inc. | Wässrige hypohalogene säurezubereitungen zur inaktivierung von resistenten infektionserregern |
WO2019225541A1 (ja) | 2018-05-23 | 2019-11-28 | 株式会社トクヤマ | 次亜塩素酸第4級アルキルアンモニウム溶液、その製造方法および半導体ウエハの洗浄方法 |
JP6901998B2 (ja) * | 2018-06-15 | 2021-07-14 | 株式会社トクヤマ | 4級アルキルアンモニウムイオン、亜塩素酸イオン、及び次亜塩素酸イオンを含む酸化性組成物 |
KR102683037B1 (ko) * | 2018-09-06 | 2024-07-09 | 후지필름 가부시키가이샤 | 약액, 기판의 처리 방법 |
JP7219061B2 (ja) * | 2018-11-14 | 2023-02-07 | 関東化学株式会社 | ルテニウム除去用組成物 |
KR20210125997A (ko) * | 2019-02-13 | 2021-10-19 | 가부시끼가이샤 도꾸야마 | 차아염소산 이온, 및 pH 완충제를 함유하는 반도체 웨이퍼의 처리액 |
KR20210063248A (ko) | 2019-11-22 | 2021-06-01 | 가부시끼가이샤 도꾸야마 | 차아염소산 제 4 급 알킬암모늄 용액, 그 제조 방법 및 반도체 웨이퍼의 처리 방법 |
US20230207329A1 (en) * | 2020-02-25 | 2023-06-29 | Tokuyama Corporation | Treatment liquid for semiconductor with ruthenium |
KR20220159387A (ko) * | 2020-03-31 | 2022-12-02 | 가부시끼가이샤 도꾸야마 | 반도체용 처리액 및 그 제조 방법 |
TWI798681B (zh) * | 2020-04-17 | 2023-04-11 | 日商德山股份有限公司 | 鹵素含氧酸溶液之製造方法 |
JP2022008214A (ja) | 2020-06-25 | 2022-01-13 | 株式会社トクヤマ | ハロゲン酸素酸溶液の製造方法及び製造装置 |
KR20230048015A (ko) * | 2020-08-07 | 2023-04-10 | 가부시끼가이샤 도꾸야마 | 차아브롬산 이온 및 pH 완충제를 함유하는 반도체 웨이퍼의 처리액 |
KR20230111234A (ko) * | 2020-11-26 | 2023-07-25 | 가부시끼가이샤 도꾸야마 | 반도체 웨이퍼의 처리액 및 그 제조 방법 |
CN116724143A (zh) * | 2021-01-19 | 2023-09-08 | 朗姆研究公司 | 具有金属蚀刻残留物的室部件的清洁方法 |
KR20220150134A (ko) * | 2021-05-03 | 2022-11-10 | 삼성전자주식회사 | 포토레지스트 박리 조성물과 이를 이용하는 반도체 소자 및 반도체 패키지의 제조 방법 |
CN115916741A (zh) * | 2021-06-07 | 2023-04-04 | 株式会社德山 | 卤素含氧酸的制造方法及其制造装置 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2256958A (en) * | 1939-05-13 | 1941-09-23 | Pittsburgh Plate Glass Co | Quaternary ammonium hypohalites and method of making same |
GB1080767A (en) * | 1965-05-25 | 1967-08-23 | Ici Ltd | Tarnish inhibiting compositions |
US3962108A (en) * | 1975-11-03 | 1976-06-08 | Kti Chemical, Inc. | Chemical stripping solution |
DE3308850C2 (de) * | 1983-03-12 | 1985-03-07 | B. Braun Melsungen Ag, 3508 Melsungen | Bleich-, Reinigungs- und Desinfektionsmittel auf Hypohalitbasis mit verbesserter Lagerstabilität |
US4642221A (en) * | 1983-07-05 | 1987-02-10 | Atlantic Richfield Company | Method and composition for inhibiting corrosion in aqueous heat transfer systems |
US5364961A (en) | 1992-06-15 | 1994-11-15 | Monsanto Company | Process for making optically active α-amino ketones |
US5380458A (en) * | 1992-10-02 | 1995-01-10 | Colgate-Palmolive Co. | Stabilized hypohalite compositions |
US5773627A (en) * | 1995-03-21 | 1998-06-30 | Betzdearborn Inc. | Methods of inhibiting corrosion using halo-benzotriazoles |
JP2677235B2 (ja) * | 1995-03-30 | 1997-11-17 | 日本電気株式会社 | 半導体基板の洗浄装置及び洗浄方法並びに洗浄液の生成方法 |
JPH0959276A (ja) * | 1995-08-11 | 1997-03-04 | Kumiai Chem Ind Co Ltd | 縮合ヘテロ環誘導体及び除草剤 |
JPH09279189A (ja) | 1996-04-08 | 1997-10-28 | Nippon Steel Corp | 半導体基板用洗浄液 |
JPH1055993A (ja) * | 1996-08-09 | 1998-02-24 | Hitachi Ltd | 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法 |
US6573387B1 (en) * | 1997-03-21 | 2003-06-03 | The Scripps Research Institute | Synthesis of α,β-substituted amino amides, esters, and acids |
US5968280A (en) * | 1997-11-12 | 1999-10-19 | International Business Machines Corporation | Method for cleaning a surface |
US5889161A (en) * | 1998-05-13 | 1999-03-30 | Sri International | N,N'-azobis-nitroazoles and analogs thereof as igniter compounds for use in energetic compositions |
JP2000056478A (ja) | 1998-08-04 | 2000-02-25 | Showa Denko Kk | サイドウォール除去液 |
KR100473442B1 (ko) * | 1998-10-23 | 2005-03-08 | 아치 스페셜티 케미칼즈, 인코포레이티드 | 금속층의 화학적 기계적 연마를 위한 활성제, 활성제 용액, 슬러리 시스템 및 연마방법 |
JP4224652B2 (ja) * | 1999-03-08 | 2009-02-18 | 三菱瓦斯化学株式会社 | レジスト剥離液およびそれを用いたレジストの剥離方法 |
MY143399A (en) | 2001-07-09 | 2011-05-13 | Avantor Performance Mat Inc | Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning |
JP3832399B2 (ja) * | 2001-08-28 | 2006-10-11 | 栗田工業株式会社 | 殺菌殺藻剤組成物及び水系の殺菌殺藻方法 |
JP2003119494A (ja) | 2001-10-05 | 2003-04-23 | Nec Corp | 洗浄組成物およびこれを用いた洗浄方法と洗浄装置 |
KR20030082767A (ko) * | 2002-04-18 | 2003-10-23 | 주식회사 덕성 | 수용액에서의 전해질의 전기전도도가 높은 물질을 이용한레지스트 박리액 조성물 |
JP4267359B2 (ja) | 2002-04-26 | 2009-05-27 | 花王株式会社 | レジスト用剥離剤組成物 |
JP4330529B2 (ja) * | 2002-06-07 | 2009-09-16 | マリンクロッド・ベイカー・インコーポレイテッド | マイクロエレクトロニクス洗浄およびarc除去組成物 |
CA2488735A1 (en) * | 2002-06-07 | 2003-12-18 | Mallinckrodt Baker, Inc. | Microelectronic cleaning compositions containing oxidizers and organic solvents |
US7521406B2 (en) | 2004-02-11 | 2009-04-21 | Mallinckrodt Baker, Inc | Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof |
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2004
- 2004-11-05 US US10/982,330 patent/US7521406B2/en active Active
- 2004-11-05 BR BRPI0418529-3A patent/BRPI0418529A/pt not_active IP Right Cessation
- 2004-11-05 CN CN2009101666536A patent/CN101923294B/zh active Active
- 2004-11-05 CN CN2004800416026A patent/CN1954267B/zh active Active
- 2004-11-05 CN CN2009101666540A patent/CN101833251B/zh active Active
- 2004-11-05 WO PCT/US2004/037135 patent/WO2005083523A1/en active Application Filing
- 2004-11-05 SG SG200900977-0A patent/SG150508A1/en unknown
- 2004-11-05 CA CA2555665A patent/CA2555665C/en not_active Expired - Fee Related
- 2004-11-15 TW TW093134956A patent/TWI318238B/zh active
- 2004-12-01 KR KR1020040100040A patent/KR101316993B1/ko active IP Right Grant
- 2004-12-02 JP JP2004349905A patent/JP4208826B2/ja not_active Expired - Fee Related
-
2005
- 2005-01-07 AT AT05250042T patent/ATE449362T1/de active
- 2005-01-07 DE DE602005017684T patent/DE602005017684D1/de active Active
- 2005-01-07 EP EP05250042A patent/EP1564595B1/de not_active Not-in-force
- 2005-01-07 PT PT05250042T patent/PT1564595E/pt unknown
- 2005-01-07 ES ES05250042T patent/ES2334359T3/es active Active
- 2005-01-07 PL PL05250042T patent/PL1564595T3/pl unknown
- 2005-01-07 DK DK05250042.8T patent/DK1564595T3/da active
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2006
- 2006-08-06 IL IL177305A patent/IL177305A/en active IP Right Grant
- 2006-08-07 ZA ZA200606544A patent/ZA200606544B/xx unknown
- 2006-09-08 NO NO20064056A patent/NO20064056L/no not_active Application Discontinuation
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2008
- 2008-01-11 JP JP2008004627A patent/JP4393553B2/ja not_active Expired - Fee Related
- 2008-01-11 JP JP2008004620A patent/JP2008156654A/ja active Pending
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