NO20015904D0 - Poleringsoppslemming for kjemisk-mekanisk polering av metall- og dielektrikastrukturer - Google Patents

Poleringsoppslemming for kjemisk-mekanisk polering av metall- og dielektrikastrukturer

Info

Publication number
NO20015904D0
NO20015904D0 NO20015904A NO20015904A NO20015904D0 NO 20015904 D0 NO20015904 D0 NO 20015904D0 NO 20015904 A NO20015904 A NO 20015904A NO 20015904 A NO20015904 A NO 20015904A NO 20015904 D0 NO20015904 D0 NO 20015904D0
Authority
NO
Norway
Prior art keywords
polishing
chemical
metal
dielectric structures
mechanical polishing
Prior art date
Application number
NO20015904A
Other languages
English (en)
Other versions
NO20015904L (no
Inventor
Kristina Vogt
Gerd Passing
Ming-Shih Tsai
Original Assignee
Bayer Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bayer Ag filed Critical Bayer Ag
Publication of NO20015904D0 publication Critical patent/NO20015904D0/no
Publication of NO20015904L publication Critical patent/NO20015904L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31058—After-treatment of organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
NO20015904A 2000-12-04 2001-12-03 Poleringsoppslemming for kjemisk-mekanisk polering av metall- og dielektrikastrukturer NO20015904L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10060343A DE10060343A1 (de) 2000-12-04 2000-12-04 Polierslurry für das chemisch-mechanische Polieren von Metall- und Dielektrikastrukturen

Publications (2)

Publication Number Publication Date
NO20015904D0 true NO20015904D0 (no) 2001-12-03
NO20015904L NO20015904L (no) 2002-06-05

Family

ID=7665816

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20015904A NO20015904L (no) 2000-12-04 2001-12-03 Poleringsoppslemming for kjemisk-mekanisk polering av metall- og dielektrikastrukturer

Country Status (16)

Country Link
US (1) US20020106900A1 (no)
EP (1) EP1211719A1 (no)
JP (1) JP2002231667A (no)
KR (1) KR20020044062A (no)
CN (1) CN1357585A (no)
AU (1) AU9338401A (no)
CA (1) CA2364053A1 (no)
CZ (1) CZ20014315A3 (no)
DE (1) DE10060343A1 (no)
HU (1) HUP0105244A3 (no)
IL (1) IL146825A0 (no)
MX (1) MXPA01012428A (no)
NO (1) NO20015904L (no)
NZ (1) NZ515863A (no)
RU (1) RU2001132541A (no)
SG (1) SG108285A1 (no)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6656241B1 (en) * 2001-06-14 2003-12-02 Ppg Industries Ohio, Inc. Silica-based slurry
DE10152993A1 (de) * 2001-10-26 2003-05-08 Bayer Ag Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen mit hoher Selektivität
DE10164262A1 (de) * 2001-12-27 2003-07-17 Bayer Ag Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen
KR20040000009A (ko) * 2002-06-19 2004-01-03 주식회사 하이닉스반도체 플라티늄-ｃｍｐ용 용액
US20060108325A1 (en) * 2004-11-19 2006-05-25 Everson William J Polishing process for producing damage free surfaces on semi-insulating silicon carbide wafers
CN101220255B (zh) * 2007-01-11 2010-06-30 长兴开发科技股份有限公司 化学机械研磨浆液与化学机械平坦化方法
CN102782066B (zh) * 2010-02-22 2015-04-15 巴斯夫欧洲公司 含铜、钌和钽层的基材的化学-机械平坦化
KR101907860B1 (ko) * 2010-10-07 2018-10-15 바스프 에스이 수성 연마 조성물 및 패턴화 또는 비패턴화 저-ｋ 유전층을 갖는 기판의 화학적 기계적 연마 방법
CN102092002B (zh) * 2010-12-09 2012-04-25 郭兵健 单晶硅片液体抛光方法
RU2457574C1 (ru) * 2011-02-18 2012-07-27 Учреждение Российской Академии Наук Научно-Технологический Центр Микроэлектроники И Субмикронных Гетероструктур Ран Способ полирования полупроводниковых материалов
JPWO2013069623A1 (ja) * 2011-11-08 2015-04-02 株式会社フジミインコーポレーテッド 研磨用組成物
CN103484026A (zh) * 2013-09-30 2014-01-01 江苏中晶科技有限公司 高效陶瓷抛光液及其制备方法
CN108562470B (zh) * 2018-04-09 2020-04-28 大连理工大学 一种钨镍铁合金金相制备方法
CN111745468A (zh) * 2020-06-04 2020-10-09 东莞市天域半导体科技有限公司 一种采用金刚石抛光膏的碳化硅晶片快速抛光方法
CN111621232A (zh) * 2020-07-07 2020-09-04 云南银帆科技有限公司 一种凹版印刷滚筒镀铜层抛光膏及其制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2629709C2 (de) * 1976-07-02 1982-06-03 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zur Herstellung eines metallionenfreien amorphen Siliciumdioxids und daraus hergestelltes Poliermittel zum mechanischen Polieren von Halbleiteroberflächen
JPH0796447B2 (ja) * 1986-06-13 1995-10-18 モ−ゼス レイク インダストリ−ズ インコ−ポレイテツド 高純度シリカの製造方法
DE3639335A1 (de) * 1986-11-18 1988-05-26 Bayer Ag Gegenueber metall- und salzschmelzen resistente werkstoffe, ihre herstellung und deren verwendung
US4915870A (en) * 1988-10-07 1990-04-10 Nalco Chemical Company Process for the manufacture of potassium stabilized silica sols
BE1007281A3 (nl) * 1993-07-12 1995-05-09 Philips Electronics Nv Werkwijze voor het polijsten van een oppervlak van koper of een in hoofdzaak koper bevattende legering, magneetkop vervaardigbaar met gebruikmaking van de werkwijze, röntgenstralingcollimerend element en röntgenstralingreflecterend element, beide voorzien van een volgens de werkwijze gepolijst oppervlak en polijstmiddel geschikt voor toepassing in de werkwijze.
EP0698001B1 (en) * 1994-02-11 1998-04-22 Rockwool International A/S Man-made vitreous fibres
DE69505643T2 (de) * 1995-05-18 1999-06-17 Sandro Giovanni G Ferronato Schleifelement zum Trockenschleifen und -Polieren und Verfahren zur Herstellung
US6432828B2 (en) * 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
JP2002517593A (ja) * 1998-06-10 2002-06-18 ロデール ホールディングス インコーポレイテッド 金属ｃｍｐにおける研磨用組成物および研磨方法
US6063306A (en) * 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
JP2000136375A (ja) * 1998-10-30 2000-05-16 Okamoto Machine Tool Works Ltd 研磨剤スラリ−
FR2789998B1 (fr) * 1999-02-18 2005-10-07 Clariant France Sa Nouvelle composition de polissage mecano-chimique d'une couche en un materiau conducteur d'aluminium ou d'alliage d'aluminium

Also Published As

Publication number Publication date
CN1357585A (zh) 2002-07-10
JP2002231667A (ja) 2002-08-16
IL146825A0 (en) 2002-07-25
HUP0105244A2 (hu) 2003-02-28
AU9338401A (en) 2002-06-06
HU0105244D0 (en) 2002-02-28
US20020106900A1 (en) 2002-08-08
EP1211719A1 (de) 2002-06-05
MXPA01012428A (es) 2004-11-10
HUP0105244A3 (en) 2003-07-28
RU2001132541A (ru) 2003-09-20
KR20020044062A (ko) 2002-06-14
CZ20014315A3 (cs) 2002-07-17
SG108285A1 (en) 2005-01-28
NZ515863A (en) 2003-05-30
CA2364053A1 (en) 2002-06-04
DE10060343A1 (de) 2002-06-06
NO20015904L (no) 2002-06-05

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