NO123437B - - Google Patents
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- Publication number
- NO123437B NO123437B NO4493/68A NO449368A NO123437B NO 123437 B NO123437 B NO 123437B NO 4493/68 A NO4493/68 A NO 4493/68A NO 449368 A NO449368 A NO 449368A NO 123437 B NO123437 B NO 123437B
- Authority
- NO
- Norway
- Prior art keywords
- region
- semiconductor
- layer
- polycrystalline
- type
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 87
- 239000000356 contaminant Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 12
- 230000007704 transition Effects 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 description 25
- 239000012535 impurity Substances 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 230000005669 field effect Effects 0.000 description 14
- 108091006146 Channels Proteins 0.000 description 9
- 238000011109 contamination Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 101100128278 Mus musculus Lins1 gene Proteins 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000005324 grain boundary diffusion Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42304—Base electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/145—Shaped junctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7315567 | 1967-11-14 | ||
JP8205567 | 1967-12-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
NO123437B true NO123437B (nl) | 1971-11-15 |
Family
ID=26414311
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO4493/68A NO123437B (nl) | 1967-11-14 | 1968-11-13 |
Country Status (10)
Country | Link |
---|---|
US (1) | US3681668A (nl) |
AT (1) | AT300039B (nl) |
BE (1) | BE723824A (nl) |
CH (1) | CH499203A (nl) |
DE (1) | DE1808928C2 (nl) |
FR (1) | FR1601561A (nl) |
GB (1) | GB1253064A (nl) |
NL (1) | NL163372C (nl) |
NO (1) | NO123437B (nl) |
SE (1) | SE354545B (nl) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3621346A (en) * | 1970-01-28 | 1971-11-16 | Ibm | Process for forming semiconductor devices with polycrystalline diffusion pathways and devices formed thereby |
US3703420A (en) * | 1970-03-03 | 1972-11-21 | Ibm | Lateral transistor structure and process for forming the same |
US3990093A (en) * | 1973-10-30 | 1976-11-02 | General Electric Company | Deep buried layers for semiconductor devices |
JPS51132779A (en) * | 1975-05-14 | 1976-11-18 | Hitachi Ltd | Production method of vertical-junction type field-effect transistor |
JPS57176772A (en) * | 1981-04-23 | 1982-10-30 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
GB2132017B (en) * | 1982-12-16 | 1986-12-03 | Secr Defence | Semiconductor device array |
US4833095A (en) * | 1985-02-19 | 1989-05-23 | Eaton Corporation | Method for buried channel field effect transistor for microwave and millimeter frequencies utilizing ion implantation |
US4601096A (en) * | 1983-02-15 | 1986-07-22 | Eaton Corporation | Method for fabricating buried channel field effect transistor for microwave and millimeter frequencies utilizing molecular beam epitaxy |
US4837175A (en) * | 1983-02-15 | 1989-06-06 | Eaton Corporation | Making a buried channel FET with lateral growth over amorphous region |
JPH06101470B2 (ja) * | 1984-02-03 | 1994-12-12 | アドバンスト・マイクロ・ディバイシズ・インコ−ポレ−テッド | スロット内に形成されたバイポーラトランジスタからなる能動要素を有する集積回路装置 |
US4935789A (en) * | 1985-02-19 | 1990-06-19 | Eaton Corporation | Buried channel FET with lateral growth over amorphous region |
US4724220A (en) * | 1985-02-19 | 1988-02-09 | Eaton Corporation | Method for fabricating buried channel field-effect transistor for microwave and millimeter frequencies |
US4683485A (en) * | 1985-12-27 | 1987-07-28 | Harris Corporation | Technique for increasing gate-drain breakdown voltage of ion-implanted JFET |
JPH0671073B2 (ja) * | 1989-08-29 | 1994-09-07 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP2775503B2 (ja) * | 1990-03-13 | 1998-07-16 | 三菱電機株式会社 | 接合ゲート型電界効果トランジスタの製造方法 |
US5637518A (en) * | 1995-10-16 | 1997-06-10 | Micron Technology, Inc. | Method of making a field effect transistor having an elevated source and an elevated drain |
JP4610865B2 (ja) * | 2003-05-30 | 2011-01-12 | パナソニック株式会社 | 半導体装置及びその製造方法 |
US20080265936A1 (en) * | 2007-04-27 | 2008-10-30 | Dsm Solutions, Inc. | Integrated circuit switching device, structure and method of manufacture |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3189973A (en) * | 1961-11-27 | 1965-06-22 | Bell Telephone Labor Inc | Method of fabricating a semiconductor device |
-
1968
- 1968-11-12 NL NL6816092.A patent/NL163372C/nl not_active IP Right Cessation
- 1968-11-12 US US774702A patent/US3681668A/en not_active Expired - Lifetime
- 1968-11-13 CH CH1690668A patent/CH499203A/de not_active IP Right Cessation
- 1968-11-13 NO NO4493/68A patent/NO123437B/no unknown
- 1968-11-13 FR FR1601561D patent/FR1601561A/fr not_active Expired
- 1968-11-13 SE SE15379/68A patent/SE354545B/xx unknown
- 1968-11-14 DE DE1808928A patent/DE1808928C2/de not_active Expired
- 1968-11-14 BE BE723824D patent/BE723824A/xx unknown
- 1968-11-14 AT AT1108868A patent/AT300039B/de not_active IP Right Cessation
- 1968-11-14 GB GB1253064D patent/GB1253064A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
AT300039B (de) | 1972-07-10 |
US3681668A (en) | 1972-08-01 |
BE723824A (nl) | 1969-04-16 |
SE354545B (nl) | 1973-03-12 |
NL163372B (nl) | 1980-03-17 |
DE1808928C2 (de) | 1983-07-28 |
FR1601561A (nl) | 1970-08-31 |
DE1808928A1 (de) | 1969-07-24 |
CH499203A (de) | 1970-11-15 |
NL163372C (nl) | 1980-08-15 |
NL6816092A (nl) | 1969-05-19 |
GB1253064A (nl) | 1971-11-10 |
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