NL9401193A - Halfgeleiderlaser en werkwijze voor het produceren hiervan. - Google Patents

Halfgeleiderlaser en werkwijze voor het produceren hiervan. Download PDF

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Publication number
NL9401193A
NL9401193A NL9401193A NL9401193A NL9401193A NL 9401193 A NL9401193 A NL 9401193A NL 9401193 A NL9401193 A NL 9401193A NL 9401193 A NL9401193 A NL 9401193A NL 9401193 A NL9401193 A NL 9401193A
Authority
NL
Netherlands
Prior art keywords
active layer
conductivity type
layer
crystal
semiconductor layer
Prior art date
Application number
NL9401193A
Other languages
English (en)
Dutch (nl)
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of NL9401193A publication Critical patent/NL9401193A/nl

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H01S5/3203—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth on non-planar substrates to create thickness or compositional variations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H01S5/405—Two-dimensional arrays

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
NL9401193A 1993-07-20 1994-07-20 Halfgeleiderlaser en werkwijze voor het produceren hiervan. NL9401193A (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5179315A JPH0738194A (ja) 1993-07-20 1993-07-20 半導体レーザ及びその製造方法
JP17931593 1993-07-20

Publications (1)

Publication Number Publication Date
NL9401193A true NL9401193A (nl) 1995-02-16

Family

ID=16063688

Family Applications (1)

Application Number Title Priority Date Filing Date
NL9401193A NL9401193A (nl) 1993-07-20 1994-07-20 Halfgeleiderlaser en werkwijze voor het produceren hiervan.

Country Status (4)

Country Link
US (1) US5528615A (ja)
JP (1) JPH0738194A (ja)
GB (1) GB2280311B (ja)
NL (1) NL9401193A (ja)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5814839A (en) * 1995-02-16 1998-09-29 Sharp Kabushiki Kaisha Semiconductor light-emitting device having a current adjusting layer and a uneven shape light emitting region, and method for producing same
JPH08242037A (ja) * 1995-03-03 1996-09-17 Nec Corp 面型半導体発光素子
US5881086A (en) * 1995-10-19 1999-03-09 Canon Kabushiki Kaisha Optical semiconductor device with quantum wires, fabrication method thereof, and light source apparatus, and optical communication system using the same
US5770475A (en) * 1996-09-23 1998-06-23 Electronics And Telecommunications Research Institute Crystal growth method for compound semiconductor
KR100234001B1 (ko) * 1996-10-30 1999-12-15 박호군 양자세선 레이저 다이오드 제작방법
JPH10200204A (ja) * 1997-01-06 1998-07-31 Fuji Xerox Co Ltd 面発光型半導体レーザ、その製造方法およびこれを用いた面発光型半導体レーザアレイ
JP3515361B2 (ja) * 1997-03-14 2004-04-05 株式会社東芝 半導体発光素子
JP2002217105A (ja) * 2001-01-17 2002-08-02 Sumitomo Chem Co Ltd ３−５族化合物半導体の製造方法
JP4540347B2 (ja) 2004-01-05 2010-09-08 シャープ株式会社 窒化物半導体レーザ素子及び、その製造方法
JP2005322786A (ja) * 2004-05-10 2005-11-17 Sharp Corp 窒化物半導体素子及びその製造方法
US7157297B2 (en) * 2004-05-10 2007-01-02 Sharp Kabushiki Kaisha Method for fabrication of semiconductor device
JP4651312B2 (ja) * 2004-06-10 2011-03-16 シャープ株式会社 半導体素子の製造方法
US7982205B2 (en) * 2006-01-12 2011-07-19 National Institute Of Advanced Industrial Science And Technology III-V group compound semiconductor light-emitting diode
FR2914783A1 (fr) * 2007-04-03 2008-10-10 St Microelectronics Sa Procede de fabrication d'un dispositif a gradient de concentration et dispositif correspondant.
JP2009137776A (ja) * 2007-12-04 2009-06-25 Sumitomo Electric Ind Ltd ＧａＡｓ半導体基板およびその製造方法、ならびにＩＩＩ−Ｖ族化合物半導体デバイスおよびその製造方法
US20110233521A1 (en) * 2010-03-24 2011-09-29 Cree, Inc. Semiconductor with contoured structure
DE102011012928A1 (de) 2011-03-03 2012-09-06 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Dünnfilm-Halbleiterkörpers und Dünnfilm-Halbleiterkörper

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5073893A (en) * 1989-06-29 1991-12-17 Hitachi, Ltd. Semiconductor structure and semiconductor laser device
US5114877A (en) * 1991-01-08 1992-05-19 Xerox Corporation Method of fabricating quantum wire semiconductor laser via photo induced evaporation enhancement during in situ epitaxial growth
EP0503211A1 (en) * 1991-03-11 1992-09-16 International Business Machines Corporation Semiconductor device comprising a layered structure grown on a structured substrate

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4801691A (en) * 1987-05-15 1989-01-31 International Minerals & Chemical Corp. Method for removing sodium dodecyl sulfate from sodium dodecyl sulfate solubilized protein solutions
JP2910251B2 (ja) * 1990-12-28 1999-06-23 日本電気株式会社 半導体レーザ
US5138625A (en) * 1991-01-08 1992-08-11 Xerox Corporation Quantum wire semiconductor laser

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5073893A (en) * 1989-06-29 1991-12-17 Hitachi, Ltd. Semiconductor structure and semiconductor laser device
US5114877A (en) * 1991-01-08 1992-05-19 Xerox Corporation Method of fabricating quantum wire semiconductor laser via photo induced evaporation enhancement during in situ epitaxial growth
EP0503211A1 (en) * 1991-03-11 1992-09-16 International Business Machines Corporation Semiconductor device comprising a layered structure grown on a structured substrate

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
E.KAPON ET AL.: "QUANTUM WIRE HETEROSTRUCTURES FOR OPTOELECTRONIC APPLICATIONS", SUPERLATTICES AND MICROSTRUCTURES, vol. 12, no. 4, 1992, LONDON GB, pages 491 - 499, XP000417822 *
H. HAMADA ET AL.: "AlGaInP Visible Laser Diodes Grown on Misoriented Substrates", IEEE JOURNAL OF QUANTUM ELECTRONICS, vol. 27, no. 6, June 1991 (1991-06-01), NEW YORK US, pages 1483 - 1490, XP000229845 *
M. WAKTHER ET AL.: "Carrier capture and quantum confinement in GaAs/AlGaAs quantum wire lasers grown on V-grooved substrates", APPLIED PHYSICS LETTERS, vol. 60, no. 5, 3 February 1992 (1992-02-03), NEW YORK US, pages 521 - 523, XP000295588 *

Also Published As

Publication number Publication date
GB2280311A (en) 1995-01-25
JPH0738194A (ja) 1995-02-07
GB9414551D0 (en) 1994-09-07
US5528615A (en) 1996-06-18
GB2280311B (en) 1997-06-04

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