GB2280311B - Semiconductor laser and method of producing the semiconductor laser - Google Patents

Semiconductor laser and method of producing the semiconductor laser

Info

Publication number
GB2280311B
GB2280311B GB9414551A GB9414551A GB2280311B GB 2280311 B GB2280311 B GB 2280311B GB 9414551 A GB9414551 A GB 9414551A GB 9414551 A GB9414551 A GB 9414551A GB 2280311 B GB2280311 B GB 2280311B
Authority
GB
United Kingdom
Prior art keywords
semiconductor laser
producing
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9414551A
Other languages
English (en)
Other versions
GB2280311A (en
GB9414551D0 (en
Inventor
Akihiro Shima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of GB9414551D0 publication Critical patent/GB9414551D0/en
Publication of GB2280311A publication Critical patent/GB2280311A/en
Application granted granted Critical
Publication of GB2280311B publication Critical patent/GB2280311B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H01S5/3203—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth on non-planar substrates to create thickness or compositional variations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H01S5/405—Two-dimensional arrays

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
GB9414551A 1993-07-20 1994-07-19 Semiconductor laser and method of producing the semiconductor laser Expired - Fee Related GB2280311B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5179315A JPH0738194A (ja) 1993-07-20 1993-07-20 半導体レーザ及びその製造方法

Publications (3)

Publication Number Publication Date
GB9414551D0 GB9414551D0 (en) 1994-09-07
GB2280311A GB2280311A (en) 1995-01-25
GB2280311B true GB2280311B (en) 1997-06-04

Family

ID=16063688

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9414551A Expired - Fee Related GB2280311B (en) 1993-07-20 1994-07-19 Semiconductor laser and method of producing the semiconductor laser

Country Status (4)

Country Link
US (1) US5528615A (ja)
JP (1) JPH0738194A (ja)
GB (1) GB2280311B (ja)
NL (1) NL9401193A (ja)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5814839A (en) * 1995-02-16 1998-09-29 Sharp Kabushiki Kaisha Semiconductor light-emitting device having a current adjusting layer and a uneven shape light emitting region, and method for producing same
JPH08242037A (ja) * 1995-03-03 1996-09-17 Nec Corp 面型半導体発光素子
US5881086A (en) * 1995-10-19 1999-03-09 Canon Kabushiki Kaisha Optical semiconductor device with quantum wires, fabrication method thereof, and light source apparatus, and optical communication system using the same
US5770475A (en) * 1996-09-23 1998-06-23 Electronics And Telecommunications Research Institute Crystal growth method for compound semiconductor
KR100234001B1 (ko) * 1996-10-30 1999-12-15 박호군 양자세선 레이저 다이오드 제작방법
JPH10200204A (ja) * 1997-01-06 1998-07-31 Fuji Xerox Co Ltd 面発光型半導体レーザ、その製造方法およびこれを用いた面発光型半導体レーザアレイ
JP3515361B2 (ja) * 1997-03-14 2004-04-05 株式会社東芝 半導体発光素子
JP2002217105A (ja) * 2001-01-17 2002-08-02 Sumitomo Chem Co Ltd ３−５族化合物半導体の製造方法
JP4540347B2 (ja) 2004-01-05 2010-09-08 シャープ株式会社 窒化物半導体レーザ素子及び、その製造方法
JP2005322786A (ja) * 2004-05-10 2005-11-17 Sharp Corp 窒化物半導体素子及びその製造方法
US7157297B2 (en) * 2004-05-10 2007-01-02 Sharp Kabushiki Kaisha Method for fabrication of semiconductor device
JP4651312B2 (ja) * 2004-06-10 2011-03-16 シャープ株式会社 半導体素子の製造方法
US7982205B2 (en) * 2006-01-12 2011-07-19 National Institute Of Advanced Industrial Science And Technology III-V group compound semiconductor light-emitting diode
FR2914783A1 (fr) * 2007-04-03 2008-10-10 St Microelectronics Sa Procede de fabrication d'un dispositif a gradient de concentration et dispositif correspondant.
JP2009137776A (ja) * 2007-12-04 2009-06-25 Sumitomo Electric Ind Ltd ＧａＡｓ半導体基板およびその製造方法、ならびにＩＩＩ−Ｖ族化合物半導体デバイスおよびその製造方法
US20110233521A1 (en) * 2010-03-24 2011-09-29 Cree, Inc. Semiconductor with contoured structure
DE102011012928A1 (de) 2011-03-03 2012-09-06 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Dünnfilm-Halbleiterkörpers und Dünnfilm-Halbleiterkörper

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04234185A (ja) * 1990-12-28 1992-08-21 Nec Corp 半導体レーザ
EP0503211A1 (en) * 1991-03-11 1992-09-16 International Business Machines Corporation Semiconductor device comprising a layered structure grown on a structured substrate

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4801691A (en) * 1987-05-15 1989-01-31 International Minerals & Chemical Corp. Method for removing sodium dodecyl sulfate from sodium dodecyl sulfate solubilized protein solutions
JP2854607B2 (ja) * 1989-06-29 1999-02-03 株式会社日立製作所 半導体装置及び半導体レーザ装置
US5138625A (en) * 1991-01-08 1992-08-11 Xerox Corporation Quantum wire semiconductor laser
US5114877A (en) * 1991-01-08 1992-05-19 Xerox Corporation Method of fabricating quantum wire semiconductor laser via photo induced evaporation enhancement during in situ epitaxial growth

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04234185A (ja) * 1990-12-28 1992-08-21 Nec Corp 半導体レーザ
EP0503211A1 (en) * 1991-03-11 1992-09-16 International Business Machines Corporation Semiconductor device comprising a layered structure grown on a structured substrate

Also Published As

Publication number Publication date
GB2280311A (en) 1995-01-25
NL9401193A (nl) 1995-02-16
JPH0738194A (ja) 1995-02-07
GB9414551D0 (en) 1994-09-07
US5528615A (en) 1996-06-18

Similar Documents

Publication Publication Date Title
GB2267602B (en) Semiconductor laser and method for manufacturing semiconductor laser
EP0477013A3 (en) Semiconductor laser and method of producing the semiconductor laser
AU2082492A (en) Keratoprosthesis and method of producing the same
EP0675534A3 (en) SOI substrate and manufacturing method.
EP0804867A4 (en) AN IMPROVED MANUFACTURING METHOD FOR A THERMOELECTRIC MODULE AND RESULTING MODULE
EP0475371A3 (en) Surface emission type semiconductor laser and method of making the same
EP0476689A3 (en) Semiconductor laser and manufacturing method of the same
EP0706243A3 (en) Semiconductor laser with distributed reflector and method of making
EP0433051A3 (en) A semiconductor laser device and a method of producing the same
EP0599730A3 (en) Semiconductor component and its manufacturing process.
EP0665578A3 (en) Semiconductor structure and manufacturing process.
EP0406005A3 (en) Semiconductor laser and manufacture method therefor
GB2280311B (en) Semiconductor laser and method of producing the semiconductor laser
KR0166397B1 (ko) 트랜지스터 및 그 제조방법
EP0582958A3 (en) A semiconductor laser device, an optical device and a method of producing the same
GB2292005B (en) Semiconductor laser and method of fabricating semiconductor laser
EP0660423A3 (en) Superconductor and manufacturing process.
EP0560358A3 (en) Semiconductor laser and process for fabricating the same
EP0617467A3 (en) High frequency module and method for its production.
HUT58877A (en) Ball-duct and method for producing the ball-deflecting structures of this ball-duct
GB9110970D0 (en) Laser diode and method of manufacture
EP0785603A3 (en) A semiconductor laser device and a method of producing the same
EP0468814A3 (en) Ultraviolet semiconductor laser and method of manufacturing the same
EP0612128A3 (en) Semiconductor laser and manufacturing process.
EP0622879A3 (en) Semiconductor laser and manufacturing process.

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20000719