NL8800627A - Ladingsgekoppelde inrichting. - Google Patents

Ladingsgekoppelde inrichting. Download PDF

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Publication number
NL8800627A
NL8800627A NL8800627A NL8800627A NL8800627A NL 8800627 A NL8800627 A NL 8800627A NL 8800627 A NL8800627 A NL 8800627A NL 8800627 A NL8800627 A NL 8800627A NL 8800627 A NL8800627 A NL 8800627A
Authority
NL
Netherlands
Prior art keywords
charge
channel
channels
electrodes
charge transport
Prior art date
Application number
NL8800627A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL8800627A priority Critical patent/NL8800627A/nl
Priority to EP89200596A priority patent/EP0333260B1/en
Priority to DE68923203T priority patent/DE68923203T2/de
Priority to JP1058067A priority patent/JPH029138A/ja
Priority to CN89101336A priority patent/CN1027412C/zh
Priority to KR1019890003034A priority patent/KR890015427A/ko
Publication of NL8800627A publication Critical patent/NL8800627A/nl
Priority to US07/782,777 priority patent/US5164807A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/72—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using frame transfer [FT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
NL8800627A 1988-03-15 1988-03-15 Ladingsgekoppelde inrichting. NL8800627A (nl)

Priority Applications (7)

Application Number Priority Date Filing Date Title
NL8800627A NL8800627A (nl) 1988-03-15 1988-03-15 Ladingsgekoppelde inrichting.
EP89200596A EP0333260B1 (en) 1988-03-15 1989-03-09 Charge-coupled device
DE68923203T DE68923203T2 (de) 1988-03-15 1989-03-09 Ladungsgekoppelte Anordnung.
JP1058067A JPH029138A (ja) 1988-03-15 1989-03-13 電荷結合装置
CN89101336A CN1027412C (zh) 1988-03-15 1989-03-13 电荷耦合器件
KR1019890003034A KR890015427A (ko) 1988-03-15 1989-03-13 전하 결합장치
US07/782,777 US5164807A (en) 1988-03-15 1991-10-22 Charge-coupled devices with locally widened electrodes

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8800627 1988-03-15
NL8800627A NL8800627A (nl) 1988-03-15 1988-03-15 Ladingsgekoppelde inrichting.

Publications (1)

Publication Number Publication Date
NL8800627A true NL8800627A (nl) 1989-10-02

Family

ID=19851932

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8800627A NL8800627A (nl) 1988-03-15 1988-03-15 Ladingsgekoppelde inrichting.

Country Status (7)

Country Link
US (1) US5164807A (ko)
EP (1) EP0333260B1 (ko)
JP (1) JPH029138A (ko)
KR (1) KR890015427A (ko)
CN (1) CN1027412C (ko)
DE (1) DE68923203T2 (ko)
NL (1) NL8800627A (ko)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5206530A (en) * 1989-05-02 1993-04-27 Sony Corporation Charge transfer device having multiple registers
JPH03114236A (ja) * 1989-09-28 1991-05-15 Sony Corp 電荷転送装置
US4949183A (en) * 1989-11-29 1990-08-14 Eastman Kodak Company Image sensor having multiple horizontal shift registers
JP2697246B2 (ja) * 1990-05-14 1998-01-14 日本電気株式会社 固体撮像素子
US5196719A (en) * 1990-05-14 1993-03-23 Nec Corporation Solid-state image pick-up device having electric field for accelerating electric charges from photoelectric converting region to shift register
US5650644A (en) * 1990-05-16 1997-07-22 Matsushita Electric Industrial Co., Ltd. Charge transfer device having a plurality of vertical and horizontal charge-coupled devices with improved configurations for isolation regions and impurity implanted regions between the charge-coupled devices
JP2949861B2 (ja) * 1991-01-18 1999-09-20 日本電気株式会社 Ｃｃｄリニアイメージセンサ
JP3146526B2 (ja) * 1991-07-09 2001-03-19 ソニー株式会社 Ｃｃｄ撮像素子
US5220184A (en) * 1992-05-29 1993-06-15 Eastman Kodak Company Multiple array linear CCD imager
FR2704978B1 (fr) * 1993-05-07 1995-06-09 Thomson Csf Semiconducteurs Dispositif à transfert de charges à grille d'étraînement.
JP3002365B2 (ja) * 1993-09-16 2000-01-24 シャープ株式会社 電荷転送装置及びその駆動方法
JPH09246519A (ja) * 1996-03-14 1997-09-19 Sony Corp 固体撮像装置およびその駆動方法
EP1356525A1 (en) 2001-01-23 2003-10-29 Dalsa Corporation Charge-coupled device
JP2007115912A (ja) * 2005-10-20 2007-05-10 Matsushita Electric Ind Co Ltd 固体撮像装置及びその製造方法
US7692706B2 (en) * 2006-07-20 2010-04-06 Eastman Kodak Company Charge summing in multiple output charge-coupled devices in an image sensor

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3971003A (en) * 1974-11-18 1976-07-20 Rca Corporation Charge coupled device imager
DE2842285C2 (de) * 1978-09-28 1980-09-18 Siemens Ag, 1000 Berlin Und 8000 Muenchen Ladungsverschiebespeicher in Seriell-Parallel-Seriell-Organisation
DE2912801A1 (de) * 1979-03-30 1980-10-09 Siemens Ag Monolithisch integrierte filterschaltung
DE2939518A1 (de) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierte schaltung zur zeilenweisen bildabtastung
US4376897A (en) * 1980-06-25 1983-03-15 International Business Machines Corp. Low voltage serial to parallel to serial charge coupled device
JPS58190169A (ja) * 1982-04-30 1983-11-07 Toshiba Corp 固体撮像装置
JPS58210662A (ja) * 1982-05-31 1983-12-07 Fujitsu Ltd 電荷転送装置
JPS5934658A (ja) * 1982-08-20 1984-02-25 Hitachi Ltd 固体撮像素子
US4513313A (en) * 1982-12-07 1985-04-23 Canon Kabushiki Kaisha Solid state imaging device
GB8314300D0 (en) * 1983-05-24 1983-06-29 Gen Electric Co Plc Image sensors
JPS60163459A (ja) * 1984-02-06 1985-08-26 Hitachi Ltd 固体撮像素子
JPS60187054A (ja) * 1984-03-06 1985-09-24 Matsushita Electronics Corp 電荷転送装置およびその駆動方法
FR2564674B1 (fr) * 1984-05-18 1986-09-19 Thomson Csf Barrette multilineaire a transfert de charge et procede d'analyse
JPH0697670B2 (ja) * 1984-07-31 1994-11-30 株式会社東芝 電荷量演算装置
US4658278A (en) * 1985-04-15 1987-04-14 Rca Corporation High density charge-coupled device imager and method of making the same
US4807037A (en) * 1987-03-06 1989-02-21 Kabushiki Kaisha Toshiba Low noise CCD image sensor having a plurality of horizontal CCD registers
US4862235A (en) * 1988-06-30 1989-08-29 Tektronix, Inc. Electrode structure for a corner turn in a series-parallel-series charge coupled device

Also Published As

Publication number Publication date
CN1027412C (zh) 1995-01-11
JPH029138A (ja) 1990-01-12
EP0333260B1 (en) 1995-06-28
EP0333260A1 (en) 1989-09-20
KR890015427A (ko) 1989-10-30
DE68923203D1 (de) 1995-08-03
DE68923203T2 (de) 1996-02-01
CN1037236A (zh) 1989-11-15
US5164807A (en) 1992-11-17

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