NL8600393A - Werkwijze voor het etsen van aluminium/koper-legeringsfilms. - Google Patents
Werkwijze voor het etsen van aluminium/koper-legeringsfilms. Download PDFInfo
- Publication number
- NL8600393A NL8600393A NL8600393A NL8600393A NL8600393A NL 8600393 A NL8600393 A NL 8600393A NL 8600393 A NL8600393 A NL 8600393A NL 8600393 A NL8600393 A NL 8600393A NL 8600393 A NL8600393 A NL 8600393A
- Authority
- NL
- Netherlands
- Prior art keywords
- aluminum
- etching
- plasma
- copper
- chamber
- Prior art date
Links
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims description 54
- 238000005530 etching Methods 0.000 title claims description 50
- 229910000838 Al alloy Inorganic materials 0.000 title claims description 35
- 238000000034 method Methods 0.000 title claims description 32
- 229910000881 Cu alloy Inorganic materials 0.000 title claims description 29
- 238000001020 plasma etching Methods 0.000 claims description 32
- 239000007789 gas Substances 0.000 claims description 23
- 239000000460 chlorine Substances 0.000 claims description 12
- 239000001307 helium Substances 0.000 claims description 10
- 229910052734 helium Inorganic materials 0.000 claims description 10
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 9
- 229910052801 chlorine Inorganic materials 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 239000012159 carrier gas Substances 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 description 27
- 235000012431 wafers Nutrition 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000007795 chemical reaction product Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 4
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 3
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000003701 inert diluent Substances 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- -1 oxygen ions Chemical class 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 1
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 229910021592 Copper(II) chloride Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910000914 Mn alloy Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 238000000637 aluminium metallisation Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- OWPCZTKWTCZUQB-UHFFFAOYSA-N helium;tetrachloromethane Chemical compound [He].ClC(Cl)(Cl)Cl OWPCZTKWTCZUQB-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229960002415 trichloroethylene Drugs 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US70249185A | 1985-02-19 | 1985-02-19 | |
| US70249185 | 1985-02-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8600393A true NL8600393A (nl) | 1986-09-16 |
Family
ID=24821430
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8600393A NL8600393A (nl) | 1985-02-19 | 1986-02-17 | Werkwijze voor het etsen van aluminium/koper-legeringsfilms. |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS61189643A (fr) |
| DE (1) | DE3603341A1 (fr) |
| FR (1) | FR2588279A1 (fr) |
| GB (1) | GB2171360A (fr) |
| IT (1) | IT1190491B (fr) |
| NL (1) | NL8600393A (fr) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3752140T2 (de) * | 1986-09-05 | 1998-03-05 | Hitachi Ltd | Trockenes Ätzverfahren |
| US5354416A (en) * | 1986-09-05 | 1994-10-11 | Sadayuki Okudaira | Dry etching method |
| JPS63238288A (ja) * | 1987-03-27 | 1988-10-04 | Fujitsu Ltd | ドライエツチング方法 |
| JPH02210826A (ja) * | 1989-02-10 | 1990-08-22 | Hitachi Ltd | プラズマエッチング方法及び装置 |
| US5779926A (en) * | 1994-09-16 | 1998-07-14 | Applied Materials, Inc. | Plasma process for etching multicomponent alloys |
| US6780762B2 (en) | 2002-08-29 | 2004-08-24 | Micron Technology, Inc. | Self-aligned, integrated circuit contact and formation method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4226665A (en) * | 1978-07-31 | 1980-10-07 | Bell Telephone Laboratories, Incorporated | Device fabrication by plasma etching |
| GB2087315B (en) * | 1980-10-14 | 1984-07-18 | Branson Int Plasma | Plasma etching of aluminum |
| JPS57170534A (en) * | 1981-04-15 | 1982-10-20 | Hitachi Ltd | Dry etching method for aluminum and aluminum alloy |
| US4468284A (en) * | 1983-07-06 | 1984-08-28 | Psi Star, Inc. | Process for etching an aluminum-copper alloy |
-
1986
- 1986-01-22 GB GB08601485A patent/GB2171360A/en not_active Withdrawn
- 1986-02-04 JP JP61022826A patent/JPS61189643A/ja active Pending
- 1986-02-04 DE DE19863603341 patent/DE3603341A1/de not_active Withdrawn
- 1986-02-11 IT IT47642/86A patent/IT1190491B/it active
- 1986-02-17 NL NL8600393A patent/NL8600393A/nl not_active Application Discontinuation
- 1986-02-18 FR FR8602146A patent/FR2588279A1/fr active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| IT8647642A0 (it) | 1986-02-11 |
| FR2588279A1 (fr) | 1987-04-10 |
| GB8601485D0 (en) | 1986-02-26 |
| DE3603341A1 (de) | 1986-08-21 |
| GB2171360A (en) | 1986-08-28 |
| JPS61189643A (ja) | 1986-08-23 |
| IT1190491B (it) | 1988-02-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4605479A (en) | In-situ cleaned ohmic contacts | |
| US4028155A (en) | Process and material for manufacturing thin film integrated circuits | |
| US5431774A (en) | Copper etching | |
| US4490211A (en) | Laser induced chemical etching of metals with excimer lasers | |
| US5814238A (en) | Method for dry etching of transition metals | |
| US4622095A (en) | Laser stimulated halogen gas etching of metal substrates | |
| EP0023429B1 (fr) | Attaque à sec d'un film métallique | |
| JPH0336300B2 (fr) | ||
| US6184148B1 (en) | Method for stripping a photo resist on an aluminum alloy | |
| JPH05121386A (ja) | 基板表面のプラズマ洗浄方法とウエハのフオトレジスト・プラズマ洗浄方法と基板表面の洗浄装置 | |
| JPH0344030A (ja) | 半導体デバイスの製作方法 | |
| JPH08172077A (ja) | ビアのプラズマエッチング改良方法 | |
| EP0433983B1 (fr) | Procédé de gravure de cuivre utilisant des haloides | |
| US4229247A (en) | Glow discharge etching process for chromium | |
| NL8600393A (nl) | Werkwijze voor het etsen van aluminium/koper-legeringsfilms. | |
| US5126008A (en) | Corrosion-free aluminum etching process for fabricating an integrated circuit structure | |
| US5344525A (en) | Process for etching semiconductor devices | |
| EP0408276A2 (fr) | Attaque sèche de vias dans un circuit intégré en couches | |
| US3951843A (en) | Fluorocarbon composition for use in plasma removal of photoresist material from semiconductor devices | |
| EP1077481A2 (fr) | Procédé de gravure d'aluminium sur un métal réfractaire à l'aide de plasma successifs | |
| JPH06177086A (ja) | ドライエッチング方法及び装置 | |
| JP3358808B2 (ja) | 基板から有機物質を灰化する方法 | |
| US7037832B1 (en) | Method of forming a conductive pattern by removing a compound with heat in a substantially inert atmosphere | |
| JPH0697127A (ja) | 配線形成方法 | |
| US5840203A (en) | In-situ bake step in plasma ash process to prevent corrosion |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BV | The patent application has lapsed |