IT1190491B - Procedimento per la corrosione chimica di pellicole di lega alluminio/rame nella produzione di circuiti integrati - Google Patents
Procedimento per la corrosione chimica di pellicole di lega alluminio/rame nella produzione di circuiti integratiInfo
- Publication number
- IT1190491B IT1190491B IT47642/86A IT4764286A IT1190491B IT 1190491 B IT1190491 B IT 1190491B IT 47642/86 A IT47642/86 A IT 47642/86A IT 4764286 A IT4764286 A IT 4764286A IT 1190491 B IT1190491 B IT 1190491B
- Authority
- IT
- Italy
- Prior art keywords
- aluminum
- procedure
- production
- integrated circuits
- copper alloy
- Prior art date
Links
- 229910000838 Al alloy Inorganic materials 0.000 title 1
- 229910000881 Cu alloy Inorganic materials 0.000 title 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title 1
- 238000005260 corrosion Methods 0.000 title 1
- 230000007797 corrosion Effects 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000000126 substance Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US70249185A | 1985-02-19 | 1985-02-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8647642A0 IT8647642A0 (it) | 1986-02-11 |
| IT1190491B true IT1190491B (it) | 1988-02-16 |
Family
ID=24821430
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT47642/86A IT1190491B (it) | 1985-02-19 | 1986-02-11 | Procedimento per la corrosione chimica di pellicole di lega alluminio/rame nella produzione di circuiti integrati |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS61189643A (it) |
| DE (1) | DE3603341A1 (it) |
| FR (1) | FR2588279A1 (it) |
| GB (1) | GB2171360A (it) |
| IT (1) | IT1190491B (it) |
| NL (1) | NL8600393A (it) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5354416A (en) * | 1986-09-05 | 1994-10-11 | Sadayuki Okudaira | Dry etching method |
| DE3752140T2 (de) * | 1986-09-05 | 1998-03-05 | Hitachi Ltd | Trockenes Ätzverfahren |
| JPS63238288A (ja) * | 1987-03-27 | 1988-10-04 | Fujitsu Ltd | ドライエツチング方法 |
| JPH02210826A (ja) * | 1989-02-10 | 1990-08-22 | Hitachi Ltd | プラズマエッチング方法及び装置 |
| US5779926A (en) * | 1994-09-16 | 1998-07-14 | Applied Materials, Inc. | Plasma process for etching multicomponent alloys |
| US6780762B2 (en) | 2002-08-29 | 2004-08-24 | Micron Technology, Inc. | Self-aligned, integrated circuit contact and formation method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4226665A (en) * | 1978-07-31 | 1980-10-07 | Bell Telephone Laboratories, Incorporated | Device fabrication by plasma etching |
| DE3140675A1 (de) * | 1980-10-14 | 1982-06-16 | Branson International Plasma Corp., 94544 Hayward, Calif. | Verfahren und gasgemisch zum aetzen von aluminium |
| JPS57170534A (en) * | 1981-04-15 | 1982-10-20 | Hitachi Ltd | Dry etching method for aluminum and aluminum alloy |
| US4468284A (en) * | 1983-07-06 | 1984-08-28 | Psi Star, Inc. | Process for etching an aluminum-copper alloy |
-
1986
- 1986-01-22 GB GB08601485A patent/GB2171360A/en not_active Withdrawn
- 1986-02-04 JP JP61022826A patent/JPS61189643A/ja active Pending
- 1986-02-04 DE DE19863603341 patent/DE3603341A1/de not_active Withdrawn
- 1986-02-11 IT IT47642/86A patent/IT1190491B/it active
- 1986-02-17 NL NL8600393A patent/NL8600393A/nl not_active Application Discontinuation
- 1986-02-18 FR FR8602146A patent/FR2588279A1/fr active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61189643A (ja) | 1986-08-23 |
| GB2171360A (en) | 1986-08-28 |
| NL8600393A (nl) | 1986-09-16 |
| IT8647642A0 (it) | 1986-02-11 |
| GB8601485D0 (en) | 1986-02-26 |
| FR2588279A1 (fr) | 1987-04-10 |
| DE3603341A1 (de) | 1986-08-21 |
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