GB8601485D0 - Etching aluminum/copper alloy films - Google Patents

Etching aluminum/copper alloy films

Info

Publication number
GB8601485D0
GB8601485D0 GB868601485A GB8601485A GB8601485D0 GB 8601485 D0 GB8601485 D0 GB 8601485D0 GB 868601485 A GB868601485 A GB 868601485A GB 8601485 A GB8601485 A GB 8601485A GB 8601485 D0 GB8601485 D0 GB 8601485D0
Authority
GB
United Kingdom
Prior art keywords
copper alloy
alloy films
etching aluminum
etching
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB868601485A
Other versions
GB2171360A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oerlikon USA Holding Inc
Original Assignee
Oerlikon Buhrle USA Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Buhrle USA Inc filed Critical Oerlikon Buhrle USA Inc
Publication of GB8601485D0 publication Critical patent/GB8601485D0/en
Publication of GB2171360A publication Critical patent/GB2171360A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
GB08601485A 1985-02-19 1986-01-22 Etching aluminum/copper alloy films Withdrawn GB2171360A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US70249185A 1985-02-19 1985-02-19

Publications (2)

Publication Number Publication Date
GB8601485D0 true GB8601485D0 (en) 1986-02-26
GB2171360A GB2171360A (en) 1986-08-28

Family

ID=24821430

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08601485A Withdrawn GB2171360A (en) 1985-02-19 1986-01-22 Etching aluminum/copper alloy films

Country Status (6)

Country Link
JP (1) JPS61189643A (en)
DE (1) DE3603341A1 (en)
FR (1) FR2588279A1 (en)
GB (1) GB2171360A (en)
IT (1) IT1190491B (en)
NL (1) NL8600393A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5354416A (en) * 1986-09-05 1994-10-11 Sadayuki Okudaira Dry etching method
DE3752140T2 (en) * 1986-09-05 1998-03-05 Hitachi Ltd Dry etching process
JPS63238288A (en) * 1987-03-27 1988-10-04 Fujitsu Ltd Dry etching method
JPH02210826A (en) * 1989-02-10 1990-08-22 Hitachi Ltd Plasma etching method and equipment
US5779926A (en) * 1994-09-16 1998-07-14 Applied Materials, Inc. Plasma process for etching multicomponent alloys
US6780762B2 (en) 2002-08-29 2004-08-24 Micron Technology, Inc. Self-aligned, integrated circuit contact and formation method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4226665A (en) * 1978-07-31 1980-10-07 Bell Telephone Laboratories, Incorporated Device fabrication by plasma etching
DE3140675A1 (en) * 1980-10-14 1982-06-16 Branson International Plasma Corp., 94544 Hayward, Calif. METHOD AND GAS MIXTURE FOR ETCHING ALUMINUM
JPS57170534A (en) * 1981-04-15 1982-10-20 Hitachi Ltd Dry etching method for aluminum and aluminum alloy
US4468284A (en) * 1983-07-06 1984-08-28 Psi Star, Inc. Process for etching an aluminum-copper alloy

Also Published As

Publication number Publication date
JPS61189643A (en) 1986-08-23
GB2171360A (en) 1986-08-28
NL8600393A (en) 1986-09-16
IT1190491B (en) 1988-02-16
IT8647642A0 (en) 1986-02-11
FR2588279A1 (en) 1987-04-10
DE3603341A1 (en) 1986-08-21

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)