GB8601485D0 - Etching aluminum/copper alloy films - Google Patents
Etching aluminum/copper alloy filmsInfo
- Publication number
- GB8601485D0 GB8601485D0 GB868601485A GB8601485A GB8601485D0 GB 8601485 D0 GB8601485 D0 GB 8601485D0 GB 868601485 A GB868601485 A GB 868601485A GB 8601485 A GB8601485 A GB 8601485A GB 8601485 D0 GB8601485 D0 GB 8601485D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- copper alloy
- alloy films
- etching aluminum
- etching
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910000838 Al alloy Inorganic materials 0.000 title 1
- 229910000881 Cu alloy Inorganic materials 0.000 title 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title 1
- 238000005530 etching Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US70249185A | 1985-02-19 | 1985-02-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
GB8601485D0 true GB8601485D0 (en) | 1986-02-26 |
GB2171360A GB2171360A (en) | 1986-08-28 |
Family
ID=24821430
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB08601485A Withdrawn GB2171360A (en) | 1985-02-19 | 1986-01-22 | Etching aluminum/copper alloy films |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS61189643A (en) |
DE (1) | DE3603341A1 (en) |
FR (1) | FR2588279A1 (en) |
GB (1) | GB2171360A (en) |
IT (1) | IT1190491B (en) |
NL (1) | NL8600393A (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5354416A (en) * | 1986-09-05 | 1994-10-11 | Sadayuki Okudaira | Dry etching method |
DE3752140T2 (en) * | 1986-09-05 | 1998-03-05 | Hitachi Ltd | Dry etching process |
JPS63238288A (en) * | 1987-03-27 | 1988-10-04 | Fujitsu Ltd | Dry etching method |
JPH02210826A (en) * | 1989-02-10 | 1990-08-22 | Hitachi Ltd | Plasma etching method and equipment |
US5779926A (en) * | 1994-09-16 | 1998-07-14 | Applied Materials, Inc. | Plasma process for etching multicomponent alloys |
US6780762B2 (en) | 2002-08-29 | 2004-08-24 | Micron Technology, Inc. | Self-aligned, integrated circuit contact and formation method |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4226665A (en) * | 1978-07-31 | 1980-10-07 | Bell Telephone Laboratories, Incorporated | Device fabrication by plasma etching |
DE3140675A1 (en) * | 1980-10-14 | 1982-06-16 | Branson International Plasma Corp., 94544 Hayward, Calif. | METHOD AND GAS MIXTURE FOR ETCHING ALUMINUM |
JPS57170534A (en) * | 1981-04-15 | 1982-10-20 | Hitachi Ltd | Dry etching method for aluminum and aluminum alloy |
US4468284A (en) * | 1983-07-06 | 1984-08-28 | Psi Star, Inc. | Process for etching an aluminum-copper alloy |
-
1986
- 1986-01-22 GB GB08601485A patent/GB2171360A/en not_active Withdrawn
- 1986-02-04 DE DE19863603341 patent/DE3603341A1/en not_active Withdrawn
- 1986-02-04 JP JP61022826A patent/JPS61189643A/en active Pending
- 1986-02-11 IT IT47642/86A patent/IT1190491B/en active
- 1986-02-17 NL NL8600393A patent/NL8600393A/en not_active Application Discontinuation
- 1986-02-18 FR FR8602146A patent/FR2588279A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
GB2171360A (en) | 1986-08-28 |
IT8647642A0 (en) | 1986-02-11 |
IT1190491B (en) | 1988-02-16 |
FR2588279A1 (en) | 1987-04-10 |
NL8600393A (en) | 1986-09-16 |
DE3603341A1 (en) | 1986-08-21 |
JPS61189643A (en) | 1986-08-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |