NL8600306A - Schakeling voor het leveren van een stuurspanning aan een stroombronschakeling. - Google Patents

Schakeling voor het leveren van een stuurspanning aan een stroombronschakeling. Download PDF

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Publication number
NL8600306A
NL8600306A NL8600306A NL8600306A NL8600306A NL 8600306 A NL8600306 A NL 8600306A NL 8600306 A NL8600306 A NL 8600306A NL 8600306 A NL8600306 A NL 8600306A NL 8600306 A NL8600306 A NL 8600306A
Authority
NL
Netherlands
Prior art keywords
effect transistor
channel
field effect
transistor
gate
Prior art date
Application number
NL8600306A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL8600306A priority Critical patent/NL8600306A/nl
Priority to DE8787200159T priority patent/DE3766380D1/de
Priority to EP87200159A priority patent/EP0234628B1/de
Priority to JP62026494A priority patent/JPS62186311A/ja
Publication of NL8600306A publication Critical patent/NL8600306A/nl
Priority to US07/208,852 priority patent/US4808847A/en
Priority to SG565/91A priority patent/SG56591G/en
Priority to HK908/91A priority patent/HK90891A/xx

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S323/00Electricity: power supply or regulation systems
    • Y10S323/907Temperature compensation of semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Logic Circuits (AREA)
  • Amplifiers (AREA)
NL8600306A 1986-02-10 1986-02-10 Schakeling voor het leveren van een stuurspanning aan een stroombronschakeling. NL8600306A (nl)

Priority Applications (7)

Application Number Priority Date Filing Date Title
NL8600306A NL8600306A (nl) 1986-02-10 1986-02-10 Schakeling voor het leveren van een stuurspanning aan een stroombronschakeling.
DE8787200159T DE3766380D1 (de) 1986-02-10 1987-02-03 Anordnungskreis, um eine steuerspannung einem stromquellekreis zuzufuehren.
EP87200159A EP0234628B1 (de) 1986-02-10 1987-02-03 Anordnungskreis, um eine Steuerspannung einem Stromquellekreis zuzuführen
JP62026494A JPS62186311A (ja) 1986-02-10 1987-02-09 駆動電圧供給用回路
US07/208,852 US4808847A (en) 1986-02-10 1988-06-10 Temperature-compensated voltage driver circuit for a current source arrangement
SG565/91A SG56591G (en) 1986-02-10 1991-07-16 Circuit arrangement for supplying a drive voltage to a current source circuit
HK908/91A HK90891A (en) 1986-02-10 1991-11-14 Circuit arrangement for supplying a drive voltage to a current source circuit

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8600306A NL8600306A (nl) 1986-02-10 1986-02-10 Schakeling voor het leveren van een stuurspanning aan een stroombronschakeling.
NL8600306 1986-02-10

Publications (1)

Publication Number Publication Date
NL8600306A true NL8600306A (nl) 1987-09-01

Family

ID=19847542

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8600306A NL8600306A (nl) 1986-02-10 1986-02-10 Schakeling voor het leveren van een stuurspanning aan een stroombronschakeling.

Country Status (7)

Country Link
US (1) US4808847A (de)
EP (1) EP0234628B1 (de)
JP (1) JPS62186311A (de)
DE (1) DE3766380D1 (de)
HK (1) HK90891A (de)
NL (1) NL8600306A (de)
SG (1) SG56591G (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4760284A (en) * 1987-01-12 1988-07-26 Triquint Semiconductor, Inc. Pinchoff voltage generator
US4975632A (en) * 1989-03-29 1990-12-04 Texas Instruments Incorporated Stable bias current source
KR910007657B1 (ko) * 1989-05-23 1991-09-30 삼성전자 주식회사 반도체 온도검출회로
JP2978226B2 (ja) * 1990-09-26 1999-11-15 三菱電機株式会社 半導体集積回路
US5394079A (en) * 1993-04-27 1995-02-28 National Semiconductor Corporation Current mirror with improved input voltage headroom
US5521490A (en) * 1994-08-08 1996-05-28 National Semiconductor Corporation Current mirror with improved input voltage headroom
US5594441A (en) * 1994-12-30 1997-01-14 Psc, Inc. D/A converter with constant gate voltage
US5627456A (en) * 1995-06-07 1997-05-06 International Business Machines Corporation All FET fully integrated current reference circuit
DE10204487B4 (de) * 2002-01-30 2004-03-04 Infineon Technologies Ag Temperatursensor
US6903601B1 (en) * 2003-08-14 2005-06-07 National Semiconductor Corporation Reference voltage generator for biasing a MOSFET with a constant ratio of transconductance and drain current
JP4859754B2 (ja) * 2007-05-28 2012-01-25 株式会社リコー 基準電圧発生回路及び基準電圧発生回路を使用した定電圧回路
JP5467849B2 (ja) * 2008-12-22 2014-04-09 セイコーインスツル株式会社 基準電圧回路及び半導体装置
JP5945124B2 (ja) * 2012-02-03 2016-07-05 トレックス・セミコンダクター株式会社 電源回路
US11614368B2 (en) * 2018-07-31 2023-03-28 Texas Instruments Incorporated Methods and apparatus to provide an adaptive gate driver for switching devices

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5249139B2 (de) * 1974-09-04 1977-12-15
US4010425A (en) * 1975-10-02 1977-03-01 Rca Corporation Current mirror amplifier
US4004164A (en) * 1975-12-18 1977-01-18 International Business Machines Corporation Compensating current source
US4199693A (en) * 1978-02-07 1980-04-22 Burroughs Corporation Compensated MOS timing network
US4301380A (en) * 1979-05-01 1981-11-17 Motorola, Inc. Voltage detector
DE3108726A1 (de) * 1981-03-07 1982-09-16 Deutsche Itt Industries Gmbh, 7800 Freiburg Monolithisch integrierte referenzspannungsquelle
US4609833A (en) * 1983-08-12 1986-09-02 Thomson Components-Mostek Corporation Simple NMOS voltage reference circuit
US4583037A (en) * 1984-08-23 1986-04-15 At&T Bell Laboratories High swing CMOS cascode current mirror
US4645948A (en) * 1984-10-01 1987-02-24 At&T Bell Laboratories Field effect transistor current source
US4618815A (en) * 1985-02-11 1986-10-21 At&T Bell Laboratories Mixed threshold current mirror
US4768170A (en) * 1986-06-06 1988-08-30 Intel Corporation MOS temperature sensing circuit
US4760288A (en) * 1986-07-21 1988-07-26 Honeywell Inc. Temperature compensation for semiconductor logic gates

Also Published As

Publication number Publication date
DE3766380D1 (de) 1991-01-10
US4808847A (en) 1989-02-28
JPS62186311A (ja) 1987-08-14
HK90891A (en) 1991-11-22
EP0234628A1 (de) 1987-09-02
SG56591G (en) 1991-08-23
EP0234628B1 (de) 1990-11-28

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A1B A search report has been drawn up
BV The patent application has lapsed