NL8501133A - Integreerbare inrichting voor besturing van de veranderingssnelheid van de uitschakelingsspanning van niet-regeneratieve spanning-bestuurde schakelingshalfgeleiderinrichtingen. - Google Patents

Integreerbare inrichting voor besturing van de veranderingssnelheid van de uitschakelingsspanning van niet-regeneratieve spanning-bestuurde schakelingshalfgeleiderinrichtingen. Download PDF

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Publication number
NL8501133A
NL8501133A NL8501133A NL8501133A NL8501133A NL 8501133 A NL8501133 A NL 8501133A NL 8501133 A NL8501133 A NL 8501133A NL 8501133 A NL8501133 A NL 8501133A NL 8501133 A NL8501133 A NL 8501133A
Authority
NL
Netherlands
Prior art keywords
voltage
circuit
signal
input
current
Prior art date
Application number
NL8501133A
Other languages
English (en)
Dutch (nl)
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of NL8501133A publication Critical patent/NL8501133A/nl

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/0406—Modifications for accelerating switching in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
    • H03K17/04206—Modifications for accelerating switching by feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

Landscapes

  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
NL8501133A 1984-04-27 1985-04-18 Integreerbare inrichting voor besturing van de veranderingssnelheid van de uitschakelingsspanning van niet-regeneratieve spanning-bestuurde schakelingshalfgeleiderinrichtingen. NL8501133A (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/604,359 US4591734A (en) 1984-04-27 1984-04-27 Integratable circuit for controlling turn-off voltage rate-of-change of non-regenerative voltage-controlled switching semiconductor devices
US60435984 1984-04-27

Publications (1)

Publication Number Publication Date
NL8501133A true NL8501133A (nl) 1985-11-18

Family

ID=24419285

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8501133A NL8501133A (nl) 1984-04-27 1985-04-18 Integreerbare inrichting voor besturing van de veranderingssnelheid van de uitschakelingsspanning van niet-regeneratieve spanning-bestuurde schakelingshalfgeleiderinrichtingen.

Country Status (8)

Country Link
US (1) US4591734A (ja)
JP (1) JPS60259020A (ja)
BE (1) BE902276A (ja)
BR (1) BR8502083A (ja)
DE (1) DE3514699A1 (ja)
FR (1) FR2563669A1 (ja)
GB (1) GB2158314A (ja)
NL (1) NL8501133A (ja)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3689445T2 (de) * 1985-02-08 1994-07-14 Toshiba Kawasaki Kk Schutzschaltung für einen Bipolartransistor mit isoliertem Gate.
FR2635930B1 (fr) * 1988-08-31 1990-11-23 Sgs Thomson Microelectronics Commutateur bidirectionnel monolithique a transistors mos de puissance
US5055721A (en) * 1989-04-13 1991-10-08 Mitsubishi Denki Kabushiki Kaisha Drive circuit for igbt device
JPH066195A (ja) * 1992-06-18 1994-01-14 Mitsubishi Electric Corp 出力ドライバ回路
GB9302214D0 (en) * 1993-02-04 1993-03-24 Texas Instruments Ltd Differential bus drivers
US5451858A (en) * 1993-08-02 1995-09-19 Martin Marietta Corp. Automatic equal-phase synchronizer for a varying number of synchronized units
FR2735299B1 (fr) * 1995-06-09 1997-08-22 Legrand Sa Interrupteur statique a protection integree
GB9610098D0 (en) * 1996-05-15 1996-07-17 Palmer Patrick R Insulated gate bipolar transistor control
DE19634612A1 (de) * 1996-08-27 1998-03-12 Siemens Ag Verfahren und Vorrichtung zur Optimierung des Abschaltvorgangs eines nichteinrastenden, abschaltbaren Leistungs-Halbleiterschalters
US5952817A (en) * 1997-04-24 1999-09-14 Linear Technology Corporation Apparatus and method using waveform shaping for reducing high frequency noise from switching inductive loads
FI105616B (fi) 1998-08-12 2000-09-15 Abb Industry Oy Menetelmä ja järjestely tehopuolijohteen tilatiedon määrittämiseksi
CA2427039C (en) * 2003-04-29 2013-08-13 Kinectrics Inc. High speed bi-directional solid state switch
DE102006022158A1 (de) * 2006-05-12 2007-11-15 Beckhoff Automation Gmbh Leistungsschaltung mit Kurzschlussschutzschaltung
US10338620B2 (en) 2017-11-15 2019-07-02 Infineon Technologies Ag Feedback circuit for regulation loops
DE102019134525A1 (de) * 2019-12-16 2021-06-17 Valeo Siemens Eautomotive Germany Gmbh Schaltungsanordnung und Verfahren zum Schutz eines Leistungshalbleiterschalters vor Überspannungen
US11689111B2 (en) * 2021-04-07 2023-06-27 Texas Instruments Incorporated Self-powered solid state relay using digital isolators
CN117239676B (zh) * 2023-11-15 2024-03-15 清华大学 用于高纯锗探测器的控制电路及方法、高纯锗探测器

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4256979A (en) * 1978-12-26 1981-03-17 Honeywell, Inc. Alternating polarity power supply control apparatus
DE3108385C2 (de) * 1981-03-05 1982-12-02 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Ansteuerung eines Leistungs-Feldeffekt-Schalttransistors und Schaltungsanordnungen zur Durchführung des Verfahrens
US4477742A (en) * 1982-06-21 1984-10-16 Eaton Corporation Three terminal bidirectional drain to drain FET circuit
US4540893A (en) * 1983-05-31 1985-09-10 General Electric Company Controlled switching of non-regenerative power semiconductors

Also Published As

Publication number Publication date
DE3514699A1 (de) 1985-11-07
FR2563669A1 (fr) 1985-10-31
BR8502083A (pt) 1985-12-31
BE902276A (fr) 1985-10-25
GB2158314A (en) 1985-11-06
GB8508865D0 (en) 1985-05-09
US4591734A (en) 1986-05-27
JPS60259020A (ja) 1985-12-21

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