NL8204475A - Werkwijze voor het bij lage temperatuur en ladingvrij vormen van natieve oxidelagen. - Google Patents

Werkwijze voor het bij lage temperatuur en ladingvrij vormen van natieve oxidelagen. Download PDF

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Publication number
NL8204475A
NL8204475A NL8204475A NL8204475A NL8204475A NL 8204475 A NL8204475 A NL 8204475A NL 8204475 A NL8204475 A NL 8204475A NL 8204475 A NL8204475 A NL 8204475A NL 8204475 A NL8204475 A NL 8204475A
Authority
NL
Netherlands
Prior art keywords
native oxide
substrate
oxygen
oxygen atoms
radiation
Prior art date
Application number
NL8204475A
Other languages
English (en)
Dutch (nl)
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of NL8204475A publication Critical patent/NL8204475A/nl

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Classifications

    • H10P14/6312—
    • H10P14/6338—
    • H10P14/668—
    • H10P14/692—
    • H10P14/69215—

Landscapes

  • Formation Of Insulating Films (AREA)
NL8204475A 1981-11-23 1982-11-18 Werkwijze voor het bij lage temperatuur en ladingvrij vormen van natieve oxidelagen. NL8204475A (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US32378081A 1981-11-23 1981-11-23
US32378081 1981-11-23

Publications (1)

Publication Number Publication Date
NL8204475A true NL8204475A (nl) 1983-06-16

Family

ID=23260697

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8204475A NL8204475A (nl) 1981-11-23 1982-11-18 Werkwijze voor het bij lage temperatuur en ladingvrij vormen van natieve oxidelagen.

Country Status (5)

Country Link
JP (1) JPS58155725A (esLanguage)
DE (1) DE3242921A1 (esLanguage)
FR (1) FR2517121A1 (esLanguage)
GB (1) GB2111037B (esLanguage)
NL (1) NL8204475A (esLanguage)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59111333A (ja) * 1982-12-09 1984-06-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション ＳｉＯ領域をＳｉＯ↓２領域に変換してＳｉＯ↓２領を形成する方法
DE3680623D1 (de) * 1985-02-28 1991-09-05 Sony Corp Verfahren zur herstellung isolierender oxid-schichten auf einem halbleiterkoerper.
DE3545242A1 (de) * 1985-12-20 1987-06-25 Licentia Gmbh Strukturierter halbleiterkoerper
US5178682A (en) * 1988-06-21 1993-01-12 Mitsubishi Denki Kabushiki Kaisha Method for forming a thin layer on a semiconductor substrate and apparatus therefor
JPH01319944A (ja) * 1988-06-21 1989-12-26 Mitsubishi Electric Corp 半導体基板表面に薄膜を形成する方法およびその装置
FR2635915B1 (fr) * 1988-08-30 1992-04-30 Loualiche Slimane Procede de fabrication d'une couche mince d'oxyde par voie seche sur un materiau iii-v, couche d'oxyde obtenue par ce procede et application a une diode schottky
KR101160373B1 (ko) * 2004-05-21 2012-06-26 미츠비시 가스 가가쿠 가부시키가이샤 물질의 산화 방법 및 그 산화 장치

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3718503A (en) * 1971-07-14 1973-02-27 Us Army Method of forming a diffusion mask barrier on a silicon substrate
DE2155849C3 (de) * 1971-11-10 1979-07-26 Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg Verfahren zur Herstellung eines stabilisierenden und/oder isolierenden Überzuges auf Halbleiteroberflächen
DE3066027D1 (en) * 1979-12-17 1984-02-02 Hughes Aircraft Co Low temperature process for depositing oxide layers by photochemical vapor deposition

Also Published As

Publication number Publication date
JPS58155725A (ja) 1983-09-16
JPH0436456B2 (esLanguage) 1992-06-16
FR2517121A1 (fr) 1983-05-27
GB2111037A (en) 1983-06-29
GB2111037B (en) 1984-10-17
DE3242921A1 (de) 1983-08-04

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Legal Events

Date Code Title Description
A85 Still pending on 85-01-01
BV The patent application has lapsed