NL8103218A - Veldeffekttransistor met geisoleerde stuurelektrode. - Google Patents
Veldeffekttransistor met geisoleerde stuurelektrode. Download PDFInfo
- Publication number
- NL8103218A NL8103218A NL8103218A NL8103218A NL8103218A NL 8103218 A NL8103218 A NL 8103218A NL 8103218 A NL8103218 A NL 8103218A NL 8103218 A NL8103218 A NL 8103218A NL 8103218 A NL8103218 A NL 8103218A
- Authority
- NL
- Netherlands
- Prior art keywords
- zone
- semiconductor device
- epitaxial layer
- discharge
- drain
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 33
- 230000015556 catabolic process Effects 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims description 4
- 239000002019 doping agent Substances 0.000 claims description 4
- 230000002441 reversible effect Effects 0.000 claims description 4
- 230000000295 complement effect Effects 0.000 claims description 2
- 108091006146 Channels Proteins 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 gallium arsenide Chemical class 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8103218A NL8103218A (nl) | 1981-07-06 | 1981-07-06 | Veldeffekttransistor met geisoleerde stuurelektrode. |
| CA000406326A CA1183281A (en) | 1981-07-06 | 1982-06-30 | Insulated gate field effect transistor |
| DE8282200826T DE3279955D1 (en) | 1981-07-06 | 1982-07-02 | Insulated gate field effect transistor |
| EP82200826A EP0069429B1 (en) | 1981-07-06 | 1982-07-02 | Insulated gate field effect transistor |
| JP57116674A JPS5816572A (ja) | 1981-07-06 | 1982-07-05 | 半導体装置 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8103218 | 1981-07-06 | ||
| NL8103218A NL8103218A (nl) | 1981-07-06 | 1981-07-06 | Veldeffekttransistor met geisoleerde stuurelektrode. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8103218A true NL8103218A (nl) | 1983-02-01 |
Family
ID=19837744
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8103218A NL8103218A (nl) | 1981-07-06 | 1981-07-06 | Veldeffekttransistor met geisoleerde stuurelektrode. |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0069429B1 (ja) |
| JP (1) | JPS5816572A (ja) |
| CA (1) | CA1183281A (ja) |
| DE (1) | DE3279955D1 (ja) |
| NL (1) | NL8103218A (ja) |
Families Citing this family (54)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59167066A (ja) * | 1983-03-14 | 1984-09-20 | Nissan Motor Co Ltd | 縦形ｍｏｓｆｅｔ |
| GB2150746B (en) * | 1983-12-02 | 1988-02-24 | Habib Serag El Din El Sayed | Mos transistor with surface accumulation region |
| IT1188309B (it) * | 1986-01-24 | 1988-01-07 | Sgs Microelettrica Spa | Procedimento per la fabbricazione di dispositivi elettronici integrati,in particolare transistori mos a canale p ad alta tensione |
| JPS62222676A (ja) * | 1986-03-25 | 1987-09-30 | Nec Corp | 高耐圧ｍｏｓトランジスタ |
| GB8624637D0 (en) * | 1986-10-14 | 1986-11-19 | Emi Plc Thorn | Electrical device |
| GB2206994A (en) * | 1987-06-08 | 1989-01-18 | Philips Electronic Associated | Semiconductor device |
| GB2206993A (en) * | 1987-06-08 | 1989-01-18 | Philips Electronic Associated | A method of manufacturing a semiconductor device |
| DE58905356D1 (de) * | 1988-05-11 | 1993-09-30 | Siemens Ag | MOS-Halbleiterbauelement für hohe Sperrspannung. |
| US5055896A (en) * | 1988-12-15 | 1991-10-08 | Siliconix Incorporated | Self-aligned LDD lateral DMOS transistor with high-voltage interconnect capability |
| US4994891A (en) * | 1989-06-20 | 1991-02-19 | Advanced Micro Devices | Shielded transistor device |
| ATE154469T1 (de) * | 1990-02-01 | 1997-06-15 | Fred L Quigg | Mosfet-struktur mit verminderter steuerelektrodenkapazität und herstellungsverfahren |
| JP2530033B2 (ja) * | 1990-02-08 | 1996-09-04 | 株式会社東芝 | 絶縁ゲ―ト型集積回路 |
| DE69125794T2 (de) * | 1990-11-23 | 1997-11-27 | Texas Instruments Inc | Verfahren zum gleichzeitigen Herstellen eines Feldeffekttransistors mit isoliertem Gate und eines Bipolartransistors |
| GB9106108D0 (en) * | 1991-03-22 | 1991-05-08 | Philips Electronic Associated | A lateral insulated gate field effect semiconductor device |
| US5274259A (en) * | 1993-02-01 | 1993-12-28 | Power Integrations, Inc. | High voltage transistor |
| DE69307121T2 (de) * | 1993-02-24 | 1997-04-17 | Sgs Thomson Microelectronics | Volkommen verarmter lateraler Transistor |
| BE1007283A3 (nl) * | 1993-07-12 | 1995-05-09 | Philips Electronics Nv | Halfgeleiderinrichting met een most voorzien van een extended draingebied voor hoge spanningen. |
| US5750414A (en) * | 1993-09-29 | 1998-05-12 | Siemens Components, Inc. | Method of fabricating a semiconductor device |
| US5525819A (en) * | 1994-07-06 | 1996-06-11 | The Aerospace Corporation | Microwave concentric mesfet with inherent electromagnetic shielding |
| EP0741416B1 (en) * | 1995-05-02 | 2001-09-26 | STMicroelectronics S.r.l. | Thin epitaxy RESURF ic containing HV p-ch and n-ch devices with source or drain not tied to grounds potential |
| JPH0964344A (ja) * | 1995-08-30 | 1997-03-07 | Nec Corp | 半導体装置 |
| DE19535322A1 (de) * | 1995-09-22 | 1997-03-27 | Siemens Ag | Anordnung mit einem pn-Übergang und einer Maßnahme zur Herabsetzung der Gefahr eines Durchbruchs des pn-Übergangs |
| US6831331B2 (en) | 1995-11-15 | 2004-12-14 | Denso Corporation | Power MOS transistor for absorbing surge current |
| US6242787B1 (en) | 1995-11-15 | 2001-06-05 | Denso Corporation | Semiconductor device and manufacturing method thereof |
| DE19701189B4 (de) * | 1996-01-18 | 2005-06-30 | International Rectifier Corp., El Segundo | Halbleiterbauteil |
| DE69634129T2 (de) * | 1996-05-08 | 2005-12-08 | Mitsubishi Denki K.K. | Abnormalitätsdetektionsapparat und -verfahren |
| US6346451B1 (en) * | 1997-12-24 | 2002-02-12 | Philips Electronics North America Corporation | Laterial thin-film silicon-on-insulator (SOI) device having a gate electrode and a field plate electrode |
| DE19840032C1 (de) | 1998-09-02 | 1999-11-18 | Siemens Ag | Halbleiterbauelement und Herstellungsverfahren dazu |
| US6593594B1 (en) * | 1999-12-21 | 2003-07-15 | Koninklijke Philips Electonics N.V. | Silicon carbide n-channel power LMOSFET |
| JP2002270830A (ja) * | 2001-03-12 | 2002-09-20 | Fuji Electric Co Ltd | 半導体装置 |
| US6828609B2 (en) | 2001-11-09 | 2004-12-07 | Infineon Technologies Ag | High-voltage semiconductor component |
| US6819089B2 (en) | 2001-11-09 | 2004-11-16 | Infineon Technologies Ag | Power factor correction circuit with high-voltage semiconductor component |
| EP1482560A4 (en) * | 2002-03-01 | 2008-02-27 | Sanken Electric Co Ltd | SEMICONDUCTOR DEVICE |
| TWI287873B (en) * | 2002-04-25 | 2007-10-01 | Sanken Electric Co Ltd | Semiconductor element and manufacturing method thereof |
| KR20060064659A (ko) * | 2003-08-27 | 2006-06-13 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | Ｌｄｍｏｓ 트랜지스터를 포함하는 전자 장치 및 그 제조방법 |
| US7501669B2 (en) | 2003-09-09 | 2009-03-10 | Cree, Inc. | Wide bandgap transistor devices with field plates |
| US7573078B2 (en) | 2004-05-11 | 2009-08-11 | Cree, Inc. | Wide bandgap transistors with multiple field plates |
| US7550783B2 (en) | 2004-05-11 | 2009-06-23 | Cree, Inc. | Wide bandgap HEMTs with source connected field plates |
| US9773877B2 (en) | 2004-05-13 | 2017-09-26 | Cree, Inc. | Wide bandgap field effect transistors with source connected field plates |
| US20060175670A1 (en) * | 2005-02-10 | 2006-08-10 | Nec Compound Semiconductor Device, Ltd. | Field effect transistor and method of manufacturing a field effect transistor |
| US11791385B2 (en) | 2005-03-11 | 2023-10-17 | Wolfspeed, Inc. | Wide bandgap transistors with gate-source field plates |
| EP1905098B1 (en) * | 2005-07-13 | 2019-11-20 | Ampleon Netherlands B.V. | Ldmos transistor |
| TW200735361A (en) * | 2005-12-14 | 2007-09-16 | Koninkl Philips Electronics Nv | MOS transistor and a method of manufacturing a MOS transistor |
| US8823057B2 (en) | 2006-11-06 | 2014-09-02 | Cree, Inc. | Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices |
| JP5105160B2 (ja) | 2006-11-13 | 2012-12-19 | クリー インコーポレイテッド | トランジスタ |
| US7692263B2 (en) | 2006-11-21 | 2010-04-06 | Cree, Inc. | High voltage GaN transistors |
| US20110073946A1 (en) * | 2008-05-26 | 2011-03-31 | Nxp B.V. | Ldmos transistor |
| WO2009144616A1 (en) * | 2008-05-26 | 2009-12-03 | Nxp B.V. | Ldmos transistor |
| CA2769940C (en) * | 2009-08-04 | 2016-04-26 | Gan Systems Inc. | Island matrixed gallium nitride microwave and power switching transistors |
| DE102009051745B4 (de) | 2009-11-03 | 2017-09-21 | Austriamicrosystems Ag | Hochvolt-Transistor mit Mehrfach-Dielektrikum und Herstellungsverfahren |
| JP2011249728A (ja) * | 2010-05-31 | 2011-12-08 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
| CN103050531B (zh) * | 2012-08-13 | 2015-08-19 | 上海华虹宏力半导体制造有限公司 | Rf ldmos器件及制造方法 |
| US9847411B2 (en) | 2013-06-09 | 2017-12-19 | Cree, Inc. | Recessed field plate transistor structures |
| US9679981B2 (en) | 2013-06-09 | 2017-06-13 | Cree, Inc. | Cascode structures for GaN HEMTs |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5368581A (en) * | 1976-12-01 | 1978-06-19 | Hitachi Ltd | Semiconductor device |
| DE2706623A1 (de) * | 1977-02-16 | 1978-08-17 | Siemens Ag | Mis-fet fuer hohe source-drain-spannungen |
| DE2753704C2 (de) * | 1977-12-02 | 1986-11-06 | Bernd Prof. Dr. rer.nat 5841 Holzen Höfflinger | Verfahren zum gleichzeitigen Herstellen von mittels Feldoxid isolierten CMOS-Schaltungsanordnungen und Bipolartransistoren |
| US4236167A (en) * | 1978-02-06 | 1980-11-25 | Rca Corporation | Stepped oxide, high voltage MOS transistor with near intrinsic channel regions of different doping levels |
| JPS56169369A (en) * | 1980-05-30 | 1981-12-26 | Sharp Corp | High withstand voltage mos field effect semiconductor device |
| US4300150A (en) * | 1980-06-16 | 1981-11-10 | North American Philips Corporation | Lateral double-diffused MOS transistor device |
| NL187415C (nl) * | 1980-09-08 | 1991-09-16 | Philips Nv | Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte. |
-
1981
- 1981-07-06 NL NL8103218A patent/NL8103218A/nl not_active Application Discontinuation
-
1982
- 1982-06-30 CA CA000406326A patent/CA1183281A/en not_active Expired
- 1982-07-02 EP EP82200826A patent/EP0069429B1/en not_active Expired
- 1982-07-02 DE DE8282200826T patent/DE3279955D1/de not_active Expired
- 1982-07-05 JP JP57116674A patent/JPS5816572A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0336311B2 (ja) | 1991-05-31 |
| EP0069429A3 (en) | 1986-11-05 |
| CA1183281A (en) | 1985-02-26 |
| EP0069429A2 (en) | 1983-01-12 |
| DE3279955D1 (en) | 1989-10-26 |
| JPS5816572A (ja) | 1983-01-31 |
| EP0069429B1 (en) | 1989-09-20 |
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