NL8006949A - Lagenveldeffekttransistor en werkwijze voor het vervaardigen ervan. - Google Patents

Lagenveldeffekttransistor en werkwijze voor het vervaardigen ervan. Download PDF

Info

Publication number
NL8006949A
NL8006949A NL8006949A NL8006949A NL8006949A NL 8006949 A NL8006949 A NL 8006949A NL 8006949 A NL8006949 A NL 8006949A NL 8006949 A NL8006949 A NL 8006949A NL 8006949 A NL8006949 A NL 8006949A
Authority
NL
Netherlands
Prior art keywords
layer
region
field effect
effect transistor
conductivity type
Prior art date
Application number
NL8006949A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of NL8006949A publication Critical patent/NL8006949A/nl

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/80Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1066Gate region of field-effect devices with PN junction gate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42316Gate electrodes for field effect devices for field-effect transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831Field effect transistors with field effect produced by an insulated gate with multiple gate structure
    • H01L29/7832Field effect transistors with field effect produced by an insulated gate with multiple gate structure the structure comprising a MOS gate and at least one non-MOS gate, e.g. JFET or MESFET gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
NL8006949A 1979-12-26 1980-12-22 Lagenveldeffekttransistor en werkwijze voor het vervaardigen ervan. NL8006949A (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7931682 1979-12-26
FR7931682A FR2472838A1 (fr) 1979-12-26 1979-12-26 Transistor a effet de champ du type a jonction et son procede de realisation

Publications (1)

Publication Number Publication Date
NL8006949A true NL8006949A (nl) 1981-07-16

Family

ID=9233163

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8006949A NL8006949A (nl) 1979-12-26 1980-12-22 Lagenveldeffekttransistor en werkwijze voor het vervaardigen ervan.

Country Status (5)

Country Link
JP (1) JPS5698878A (ja)
DE (1) DE3046855A1 (ja)
FR (1) FR2472838A1 (ja)
GB (1) GB2066571A (ja)
NL (1) NL8006949A (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62500343A (ja) * 1984-10-05 1987-02-05 アナログ デバイセス インコ−ポレ−テツド 低漏洩接合型電界効果トランジスタ
JPS62243369A (ja) * 1986-04-15 1987-10-23 Matsushita Electric Ind Co Ltd GaAs半導体装置の製造方法
DE102004051081A1 (de) * 2004-10-19 2006-04-27 Austriamicrosystems Ag JFET und Herstellungsverfahren
US7642617B2 (en) * 2005-09-28 2010-01-05 Agere Systems Inc. Integrated circuit with depletion mode JFET
US7557393B2 (en) * 2006-08-10 2009-07-07 Dsm Solutions, Inc. JFET with built in back gate in either SOI or bulk silicon
US20110084318A1 (en) * 2009-10-08 2011-04-14 Aaron Gibby Depleted top gate junction field effect transistor (dtgjfet)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL161621C (nl) * 1968-10-16 1980-02-15 Philips Nv Halfgeleiderinrichting met veldeffecttransistor.
DE2630079A1 (de) * 1976-07-03 1978-01-05 Licentia Gmbh Sperrschicht-feldeffekttransistor
JPS5365078A (en) * 1976-11-24 1978-06-10 Toshiba Corp Production of junction type field effect transistor
DE2702282A1 (de) * 1977-01-20 1978-07-27 Siemens Ag Verfahren zur herstellung von elektrodenkontakten und/oder leiterbahnen an halbleiterbauelementen

Also Published As

Publication number Publication date
GB2066571A (en) 1981-07-08
JPS5698878A (en) 1981-08-08
DE3046855A1 (de) 1981-08-27
FR2472838A1 (fr) 1981-07-03

Similar Documents

Publication Publication Date Title
US5801418A (en) High voltage power integrated circuit with level shift operation and without metal crossover
US4101922A (en) Field effect transistor with a short channel length
NL8102838A (nl) Laterale veldeffekttransistorinrichting met geisoleerde stuurelektrode.
US6111297A (en) MOS-technology power device integrated structure and manufacturing process thereof
US4969023A (en) SOS transistor structure
NL8005053A (nl) Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte.
NL8401983A (nl) Halfgeleiderinrichting met verhoogde doorslagspanning.
JP2001102586A (ja) 高耐圧半導体装置
EP0268426A2 (en) High speed junction field effect transistor for use in bipolar integrated circuits
US3631310A (en) Insulated gate field effect transistors
US3977020A (en) Semiconductor device, method of manufacturing same and circuit arrangement comprising the device
CN118658856A (zh) 开关速度可调的igbt与超结mosfet组合器件
US3906539A (en) Capacitance diode having a large capacitance ratio
US5977588A (en) Radio frequency power MOSFET device having improved performance characteristics
US3602781A (en) Integrated semiconductor circuit comprising only low temperature processed elements
NL8006949A (nl) Lagenveldeffekttransistor en werkwijze voor het vervaardigen ervan.
US4187514A (en) Junction type field effect transistor
KR20000029449A (ko) 측방향엠오에스트랜지스터소자
CA1173568A (en) Semiconductor device
EP0811249B1 (en) Emitter ballast bypass for radio frequency power transistors
JP2002343960A (ja) 半導体装置
JP2864576B2 (ja) 半導体装置
US3585463A (en) Complementary enhancement-type mos transistors
CN115956297B (zh) 半导体装置
US6207508B1 (en) Method for fabricating a radio frequency power MOSFET device having improved performance characteristics

Legal Events

Date Code Title Description
BV The patent application has lapsed