NL8002609A - Samengestelde geleidende structuur en werkwijze voor het vervaardigen daarvan. - Google Patents
Samengestelde geleidende structuur en werkwijze voor het vervaardigen daarvan. Download PDFInfo
- Publication number
- NL8002609A NL8002609A NL8002609A NL8002609A NL8002609A NL 8002609 A NL8002609 A NL 8002609A NL 8002609 A NL8002609 A NL 8002609A NL 8002609 A NL8002609 A NL 8002609A NL 8002609 A NL8002609 A NL 8002609A
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- conductor
- silicon
- polycrystalline silicon
- silicide
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 23
- 239000002131 composite material Substances 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 74
- 239000004020 conductor Substances 0.000 claims description 49
- 239000000377 silicon dioxide Substances 0.000 claims description 37
- 235000012239 silicon dioxide Nutrition 0.000 claims description 37
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 30
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 22
- 229910052750 molybdenum Inorganic materials 0.000 claims description 22
- 239000011733 molybdenum Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 19
- 229910021332 silicide Inorganic materials 0.000 claims description 18
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 17
- 239000011810 insulating material Substances 0.000 claims description 16
- 239000007769 metal material Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 9
- 230000001590 oxidative effect Effects 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 239000003779 heat-resistant material Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 239000007800 oxidant agent Substances 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 1
- 229960001866 silicon dioxide Drugs 0.000 description 27
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 16
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 16
- 238000001465 metallisation Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28105—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor next to the insulator having a lateral composition or doping variation, or being formed laterally by more than one deposition step
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/047,889 US4228212A (en) | 1979-06-11 | 1979-06-11 | Composite conductive structures in integrated circuits |
| US4788879 | 1979-06-11 | ||
| US06/047,888 US4227944A (en) | 1979-06-11 | 1979-06-11 | Methods of making composite conductive structures in integrated circuits |
| US4788979 | 1979-06-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8002609A true NL8002609A (nl) | 1980-12-15 |
Family
ID=26725560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8002609A NL8002609A (nl) | 1979-06-11 | 1980-05-07 | Samengestelde geleidende structuur en werkwijze voor het vervaardigen daarvan. |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE3021574A1 (de) |
| FR (1) | FR2458900A1 (de) |
| GB (1) | GB2052857A (de) |
| NL (1) | NL8002609A (de) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2139418A (en) * | 1983-05-05 | 1984-11-07 | Standard Telephones Cables Ltd | Semiconductor devices and conductors therefor |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7204543A (de) * | 1971-04-08 | 1972-10-10 | ||
| NL7510903A (nl) * | 1975-09-17 | 1977-03-21 | Philips Nv | Werkwijze voor het vervaardigen van een halfgelei- derinrichting, en inrichting vervaardigd volgens de werkwijze. |
| US4119992A (en) * | 1977-04-28 | 1978-10-10 | Rca Corp. | Integrated circuit structure and method for making same |
| US4180596A (en) * | 1977-06-30 | 1979-12-25 | International Business Machines Corporation | Method for providing a metal silicide layer on a substrate |
| US4128670A (en) * | 1977-11-11 | 1978-12-05 | International Business Machines Corporation | Fabrication method for integrated circuits with polysilicon lines having low sheet resistance |
-
1980
- 1980-05-07 NL NL8002609A patent/NL8002609A/nl not_active Application Discontinuation
- 1980-05-13 GB GB8015755A patent/GB2052857A/en not_active Withdrawn
- 1980-06-07 DE DE19803021574 patent/DE3021574A1/de not_active Withdrawn
- 1980-06-11 FR FR8012945A patent/FR2458900A1/fr not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| DE3021574A1 (de) | 1980-12-18 |
| GB2052857A (en) | 1981-01-28 |
| FR2458900A1 (fr) | 1981-01-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BV | The patent application has lapsed |