NL8001059A - Werkwijze voor de afscheiding van zuiver halfgeleider- materiaal, in het bijzonder silicium en mondstuk ter uitvoering van de werkwijze. - Google Patents

Werkwijze voor de afscheiding van zuiver halfgeleider- materiaal, in het bijzonder silicium en mondstuk ter uitvoering van de werkwijze. Download PDF

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Publication number
NL8001059A
NL8001059A NL8001059A NL8001059A NL8001059A NL 8001059 A NL8001059 A NL 8001059A NL 8001059 A NL8001059 A NL 8001059A NL 8001059 A NL8001059 A NL 8001059A NL 8001059 A NL8001059 A NL 8001059A
Authority
NL
Netherlands
Prior art keywords
container
nozzle
semiconductor material
compound
trichlorosilane
Prior art date
Application number
NL8001059A
Other languages
English (en)
Dutch (nl)
Original Assignee
Wacker Chemitronic
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemitronic filed Critical Wacker Chemitronic
Publication of NL8001059A publication Critical patent/NL8001059A/nl

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/02—Feed or outlet devices therefor
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL8001059A 1979-03-30 1980-02-21 Werkwijze voor de afscheiding van zuiver halfgeleider- materiaal, in het bijzonder silicium en mondstuk ter uitvoering van de werkwijze. NL8001059A (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2912661 1979-03-30
DE2912661A DE2912661C2 (de) 1979-03-30 1979-03-30 Verfahren zur Abscheidung von reinem Halbleitermaterial und Düse zur Durchführung des Verfahrens

Publications (1)

Publication Number Publication Date
NL8001059A true NL8001059A (nl) 1980-10-02

Family

ID=6066899

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8001059A NL8001059A (nl) 1979-03-30 1980-02-21 Werkwijze voor de afscheiding van zuiver halfgeleider- materiaal, in het bijzonder silicium en mondstuk ter uitvoering van de werkwijze.

Country Status (5)

Country Link
US (1) US4311545A (de)
JP (1) JPS55132035A (de)
DE (1) DE2912661C2 (de)
IT (1) IT1143192B (de)
NL (1) NL8001059A (de)

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IT1147832B (it) * 1982-03-29 1986-11-26 Dynamit Nobel Ag Apparecchio e procedimento per la produzione di materiali semiconduttori iperpuri
JPS6074509A (ja) * 1983-09-30 1985-04-26 Hitachi Ltd 常圧ｃｖｄ装置
FR2572312B1 (fr) * 1984-10-30 1989-01-20 Rhone Poulenc Spec Chim Procede de fabrication de barreaux de silicium ultra-pur
US4724160A (en) * 1986-07-28 1988-02-09 Dow Corning Corporation Process for the production of semiconductor materials
US5118485A (en) * 1988-03-25 1992-06-02 Hemlock Semiconductor Corporation Recovery of lower-boiling silanes in a cvd process
US5478396A (en) * 1992-09-28 1995-12-26 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
US5382419A (en) * 1992-09-28 1995-01-17 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
DE4424929C2 (de) * 1994-07-14 1997-02-13 Wacker Chemie Gmbh Halterung für Trägerkörper in einer Vorrichtung zur Abscheidung von Halbleitermaterial
DE19608885B4 (de) * 1996-03-07 2006-11-16 Wacker Chemie Ag Verfahren und Vorrichtung zum Aufheizen von Trägerkörpern
US6100105A (en) * 1996-05-10 2000-08-08 Sumitomo Chemical Company, Ltd. Fabrication of InGaAlN based compound semiconductor device
US5849076A (en) * 1996-07-26 1998-12-15 Memc Electronic Materials, Inc. Cooling system and method for epitaxial barrel reactor
DE10101040A1 (de) * 2001-01-11 2002-07-25 Wacker Chemie Gmbh Vorrichtung und Verfahren zur Herstellung eines polykristallinen Siliciumstabes
US7033561B2 (en) 2001-06-08 2006-04-25 Dow Corning Corporation Process for preparation of polycrystalline silicon
KR101094913B1 (ko) * 2006-06-09 2011-12-16 소이텍 Iii-v 족 반도체 물질을 형성하기 위한 제조 공정 시스템
CN101152932B (zh) * 2006-09-27 2011-12-14 华东理工大学 具有多个出料口的含碳固体粉料供料装置及其供料方法
WO2008064077A2 (en) * 2006-11-22 2008-05-29 S.O.I.Tec Silicon On Insulator Technologies Methods for high volume manufacture of group iii-v semiconductor materials
KR101390425B1 (ko) 2006-11-22 2014-05-19 소이텍 화학기상증착 챔버용 온도제어 퍼지 게이트 밸브
JP5656184B2 (ja) 2006-11-22 2015-01-21 ソイテック 三塩化ガリウムの噴射方式
KR101379410B1 (ko) 2006-11-22 2014-04-11 소이텍 3-5족 반도체 재료들의 대량생산을 위한 설비
KR101353334B1 (ko) * 2006-11-22 2014-02-18 소이텍 갈륨 질화물 증착에서의 반응 가스 감소
US9481944B2 (en) 2006-11-22 2016-11-01 Soitec Gas injectors including a funnel- or wedge-shaped channel for chemical vapor deposition (CVD) systems and CVD systems with the same
US20090223441A1 (en) * 2006-11-22 2009-09-10 Chantal Arena High volume delivery system for gallium trichloride
US9481943B2 (en) 2006-11-22 2016-11-01 Soitec Gallium trichloride injection scheme
EP2039653B1 (de) 2007-09-20 2015-12-23 Mitsubishi Materials Corporation Reaktor für polykristallines silicium und verfahren zur herstellung von polykristallinem silicium
EP2271788A2 (de) * 2008-03-26 2011-01-12 GT Solar Incorporated Systeme und verfahren zur verteilung von gas in einem cvd-reaktor
US20110159214A1 (en) * 2008-03-26 2011-06-30 Gt Solar, Incorporated Gold-coated polysilicon reactor system and method
JP2011517734A (ja) * 2008-04-14 2011-06-16 ヘムロック・セミコンダクター・コーポレーション 材料を蒸着するための製造装置及び当該装置において使用される電極
EP2266369B1 (de) * 2008-04-14 2017-11-22 Hemlock Semiconductor Operations LLC Vorrichtung zum abscheiden eines stoffs und darin verwendete elektrode
US8784565B2 (en) * 2008-04-14 2014-07-22 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material and an electrode for use therein
JP5444860B2 (ja) * 2008-06-24 2014-03-19 三菱マテリアル株式会社 多結晶シリコン製造装置
KR100892123B1 (ko) * 2008-12-31 2009-04-09 (주)세미머티리얼즈 폴리 실리콘 증착장치
US8540818B2 (en) * 2009-04-28 2013-09-24 Mitsubishi Materials Corporation Polycrystalline silicon reactor
US20120114860A1 (en) * 2009-07-14 2012-05-10 Max Dehtiar Method of inhibiting formation of deposits in a manufacturing system
DE102009043950B4 (de) * 2009-09-04 2012-02-02 G+R Technology Group Ag Reaktor zur Herstellung von polykristallinem Silizium
US9315895B2 (en) * 2010-05-10 2016-04-19 Mitsubishi Materials Corporation Apparatus for producing polycrystalline silicon
DE102010040093A1 (de) * 2010-09-01 2012-03-01 Wacker Chemie Ag Verfahren zur Herstellung von polykristallinem Silicium
US8871153B2 (en) 2012-05-25 2014-10-28 Rokstar Technologies Llc Mechanically fluidized silicon deposition systems and methods
US11015244B2 (en) 2013-12-30 2021-05-25 Advanced Material Solutions, Llc Radiation shielding for a CVD reactor
CN104401998B (zh) * 2014-11-25 2016-04-13 中国恩菲工程技术有限公司 喷嘴

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL238464A (de) * 1958-05-29
DE1150366B (de) * 1958-12-09 1963-06-20 Siemens Ag Verfahren zur Herstellung von Reinstsilicium
NL251143A (de) * 1959-05-04
USB524765I5 (de) * 1966-02-03 1900-01-01
JPS53106626A (en) * 1977-03-02 1978-09-16 Komatsu Mfg Co Ltd Method of making high purity rod silicon and appratus therefor
US4173944A (en) * 1977-05-20 1979-11-13 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Silverplated vapor deposition chamber

Also Published As

Publication number Publication date
US4311545A (en) 1982-01-19
DE2912661A1 (de) 1980-10-09
JPS55132035A (en) 1980-10-14
IT1143192B (it) 1986-10-22
JPS5712288B2 (de) 1982-03-10
IT8048284A0 (it) 1980-03-28
DE2912661C2 (de) 1982-06-24

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A85 Still pending on 85-01-01
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BV The patent application has lapsed