NL8001059A - Werkwijze voor de afscheiding van zuiver halfgeleider- materiaal, in het bijzonder silicium en mondstuk ter uitvoering van de werkwijze. - Google Patents
Werkwijze voor de afscheiding van zuiver halfgeleider- materiaal, in het bijzonder silicium en mondstuk ter uitvoering van de werkwijze. Download PDFInfo
- Publication number
- NL8001059A NL8001059A NL8001059A NL8001059A NL8001059A NL 8001059 A NL8001059 A NL 8001059A NL 8001059 A NL8001059 A NL 8001059A NL 8001059 A NL8001059 A NL 8001059A NL 8001059 A NL8001059 A NL 8001059A
- Authority
- NL
- Netherlands
- Prior art keywords
- container
- nozzle
- semiconductor material
- compound
- trichlorosilane
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/02—Feed or outlet devices therefor
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2912661 | 1979-03-30 | ||
DE2912661A DE2912661C2 (de) | 1979-03-30 | 1979-03-30 | Verfahren zur Abscheidung von reinem Halbleitermaterial und Düse zur Durchführung des Verfahrens |
Publications (1)
Publication Number | Publication Date |
---|---|
NL8001059A true NL8001059A (nl) | 1980-10-02 |
Family
ID=6066899
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL8001059A NL8001059A (nl) | 1979-03-30 | 1980-02-21 | Werkwijze voor de afscheiding van zuiver halfgeleider- materiaal, in het bijzonder silicium en mondstuk ter uitvoering van de werkwijze. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4311545A (de) |
JP (1) | JPS55132035A (de) |
DE (1) | DE2912661C2 (de) |
IT (1) | IT1143192B (de) |
NL (1) | NL8001059A (de) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1147832B (it) * | 1982-03-29 | 1986-11-26 | Dynamit Nobel Ag | Apparecchio e procedimento per la produzione di materiali semiconduttori iperpuri |
JPS6074509A (ja) * | 1983-09-30 | 1985-04-26 | Hitachi Ltd | 常圧cvd装置 |
FR2572312B1 (fr) * | 1984-10-30 | 1989-01-20 | Rhone Poulenc Spec Chim | Procede de fabrication de barreaux de silicium ultra-pur |
US4724160A (en) * | 1986-07-28 | 1988-02-09 | Dow Corning Corporation | Process for the production of semiconductor materials |
US5118485A (en) * | 1988-03-25 | 1992-06-02 | Hemlock Semiconductor Corporation | Recovery of lower-boiling silanes in a cvd process |
US5478396A (en) * | 1992-09-28 | 1995-12-26 | Advanced Silicon Materials, Inc. | Production of high-purity polycrystalline silicon rod for semiconductor applications |
US5382419A (en) * | 1992-09-28 | 1995-01-17 | Advanced Silicon Materials, Inc. | Production of high-purity polycrystalline silicon rod for semiconductor applications |
DE4424929C2 (de) * | 1994-07-14 | 1997-02-13 | Wacker Chemie Gmbh | Halterung für Trägerkörper in einer Vorrichtung zur Abscheidung von Halbleitermaterial |
DE19608885B4 (de) * | 1996-03-07 | 2006-11-16 | Wacker Chemie Ag | Verfahren und Vorrichtung zum Aufheizen von Trägerkörpern |
US6100105A (en) * | 1996-05-10 | 2000-08-08 | Sumitomo Chemical Company, Ltd. | Fabrication of InGaAlN based compound semiconductor device |
US5849076A (en) * | 1996-07-26 | 1998-12-15 | Memc Electronic Materials, Inc. | Cooling system and method for epitaxial barrel reactor |
DE10101040A1 (de) * | 2001-01-11 | 2002-07-25 | Wacker Chemie Gmbh | Vorrichtung und Verfahren zur Herstellung eines polykristallinen Siliciumstabes |
US7033561B2 (en) | 2001-06-08 | 2006-04-25 | Dow Corning Corporation | Process for preparation of polycrystalline silicon |
KR101094913B1 (ko) * | 2006-06-09 | 2011-12-16 | 소이텍 | Iii-v 족 반도체 물질을 형성하기 위한 제조 공정 시스템 |
CN101152932B (zh) * | 2006-09-27 | 2011-12-14 | 华东理工大学 | 具有多个出料口的含碳固体粉料供料装置及其供料方法 |
WO2008064077A2 (en) * | 2006-11-22 | 2008-05-29 | S.O.I.Tec Silicon On Insulator Technologies | Methods for high volume manufacture of group iii-v semiconductor materials |
KR101390425B1 (ko) | 2006-11-22 | 2014-05-19 | 소이텍 | 화학기상증착 챔버용 온도제어 퍼지 게이트 밸브 |
JP5656184B2 (ja) | 2006-11-22 | 2015-01-21 | ソイテック | 三塩化ガリウムの噴射方式 |
KR101379410B1 (ko) | 2006-11-22 | 2014-04-11 | 소이텍 | 3-5족 반도체 재료들의 대량생산을 위한 설비 |
KR101353334B1 (ko) * | 2006-11-22 | 2014-02-18 | 소이텍 | 갈륨 질화물 증착에서의 반응 가스 감소 |
US9481944B2 (en) | 2006-11-22 | 2016-11-01 | Soitec | Gas injectors including a funnel- or wedge-shaped channel for chemical vapor deposition (CVD) systems and CVD systems with the same |
US20090223441A1 (en) * | 2006-11-22 | 2009-09-10 | Chantal Arena | High volume delivery system for gallium trichloride |
US9481943B2 (en) | 2006-11-22 | 2016-11-01 | Soitec | Gallium trichloride injection scheme |
EP2039653B1 (de) | 2007-09-20 | 2015-12-23 | Mitsubishi Materials Corporation | Reaktor für polykristallines silicium und verfahren zur herstellung von polykristallinem silicium |
EP2271788A2 (de) * | 2008-03-26 | 2011-01-12 | GT Solar Incorporated | Systeme und verfahren zur verteilung von gas in einem cvd-reaktor |
US20110159214A1 (en) * | 2008-03-26 | 2011-06-30 | Gt Solar, Incorporated | Gold-coated polysilicon reactor system and method |
JP2011517734A (ja) * | 2008-04-14 | 2011-06-16 | ヘムロック・セミコンダクター・コーポレーション | 材料を蒸着するための製造装置及び当該装置において使用される電極 |
EP2266369B1 (de) * | 2008-04-14 | 2017-11-22 | Hemlock Semiconductor Operations LLC | Vorrichtung zum abscheiden eines stoffs und darin verwendete elektrode |
US8784565B2 (en) * | 2008-04-14 | 2014-07-22 | Hemlock Semiconductor Corporation | Manufacturing apparatus for depositing a material and an electrode for use therein |
JP5444860B2 (ja) * | 2008-06-24 | 2014-03-19 | 三菱マテリアル株式会社 | 多結晶シリコン製造装置 |
KR100892123B1 (ko) * | 2008-12-31 | 2009-04-09 | (주)세미머티리얼즈 | 폴리 실리콘 증착장치 |
US8540818B2 (en) * | 2009-04-28 | 2013-09-24 | Mitsubishi Materials Corporation | Polycrystalline silicon reactor |
US20120114860A1 (en) * | 2009-07-14 | 2012-05-10 | Max Dehtiar | Method of inhibiting formation of deposits in a manufacturing system |
DE102009043950B4 (de) * | 2009-09-04 | 2012-02-02 | G+R Technology Group Ag | Reaktor zur Herstellung von polykristallinem Silizium |
US9315895B2 (en) * | 2010-05-10 | 2016-04-19 | Mitsubishi Materials Corporation | Apparatus for producing polycrystalline silicon |
DE102010040093A1 (de) * | 2010-09-01 | 2012-03-01 | Wacker Chemie Ag | Verfahren zur Herstellung von polykristallinem Silicium |
US8871153B2 (en) | 2012-05-25 | 2014-10-28 | Rokstar Technologies Llc | Mechanically fluidized silicon deposition systems and methods |
US11015244B2 (en) | 2013-12-30 | 2021-05-25 | Advanced Material Solutions, Llc | Radiation shielding for a CVD reactor |
CN104401998B (zh) * | 2014-11-25 | 2016-04-13 | 中国恩菲工程技术有限公司 | 喷嘴 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL238464A (de) * | 1958-05-29 | |||
DE1150366B (de) * | 1958-12-09 | 1963-06-20 | Siemens Ag | Verfahren zur Herstellung von Reinstsilicium |
NL251143A (de) * | 1959-05-04 | |||
USB524765I5 (de) * | 1966-02-03 | 1900-01-01 | ||
JPS53106626A (en) * | 1977-03-02 | 1978-09-16 | Komatsu Mfg Co Ltd | Method of making high purity rod silicon and appratus therefor |
US4173944A (en) * | 1977-05-20 | 1979-11-13 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Silverplated vapor deposition chamber |
-
1979
- 1979-03-30 DE DE2912661A patent/DE2912661C2/de not_active Expired
-
1980
- 1980-02-04 JP JP1236880A patent/JPS55132035A/ja active Granted
- 1980-02-21 NL NL8001059A patent/NL8001059A/nl not_active Application Discontinuation
- 1980-03-03 US US06/126,768 patent/US4311545A/en not_active Expired - Lifetime
- 1980-03-28 IT IT48284/80A patent/IT1143192B/it active
Also Published As
Publication number | Publication date |
---|---|
US4311545A (en) | 1982-01-19 |
DE2912661A1 (de) | 1980-10-09 |
JPS55132035A (en) | 1980-10-14 |
IT1143192B (it) | 1986-10-22 |
JPS5712288B2 (de) | 1982-03-10 |
IT8048284A0 (it) | 1980-03-28 |
DE2912661C2 (de) | 1982-06-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A85 | Still pending on 85-01-01 | ||
BA | A request for search or an international-type search has been filed | ||
BB | A search report has been drawn up | ||
BV | The patent application has lapsed |