NL238464A - - Google Patents
Info
- Publication number
- NL238464A NL238464A NL238464DA NL238464A NL 238464 A NL238464 A NL 238464A NL 238464D A NL238464D A NL 238464DA NL 238464 A NL238464 A NL 238464A
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US738821A US3058812A (en) | 1958-05-29 | 1958-05-29 | Process and apparatus for producing silicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL238464A true NL238464A (de) |
Family
ID=24969624
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL238464D NL238464A (de) | 1958-05-29 | ||
| NL124690D NL124690C (de) | 1958-05-29 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL124690D NL124690C (de) | 1958-05-29 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3058812A (de) |
| CH (1) | CH394136A (de) |
| DE (2) | DE1142347B (de) |
| FR (1) | FR1225567A (de) |
| GB (1) | GB875622A (de) |
| NL (2) | NL124690C (de) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1061593B (de) * | 1956-06-25 | 1959-07-16 | Siemens Ag | Vorrichtung zur Gewinnung reinsten Halbleitermaterials fuer elektrotechnische Zwecke |
| US3310426A (en) * | 1963-10-02 | 1967-03-21 | Siemens Ag | Method and apparatus for producing semiconductor material |
| NL6700080A (de) * | 1966-01-03 | 1967-07-04 | ||
| US3459152A (en) * | 1964-08-28 | 1969-08-05 | Westinghouse Electric Corp | Apparatus for epitaxially producing a layer on a substrate |
| DE1262244B (de) * | 1964-12-23 | 1968-03-07 | Siemens Ag | Verfahren zum epitaktischen Abscheiden einer kristallinen Schicht, insbesondere aus Halbleitermaterial |
| DE1297086B (de) * | 1965-01-29 | 1969-06-12 | Siemens Ag | Verfahren zum Herstellen einer Schicht von einkristallinem Halbleitermaterial |
| DE2050076C3 (de) * | 1970-10-12 | 1980-06-26 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum Herstellen von Rohren aus Halbleitermaterial |
| JPS53106626A (en) * | 1977-03-02 | 1978-09-16 | Komatsu Mfg Co Ltd | Method of making high purity rod silicon and appratus therefor |
| DE2912661C2 (de) * | 1979-03-30 | 1982-06-24 | Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen | Verfahren zur Abscheidung von reinem Halbleitermaterial und Düse zur Durchführung des Verfahrens |
| US4481232A (en) * | 1983-05-27 | 1984-11-06 | The United States Of America As Represented By The Department Of Energy | Method and apparatus for producing high purity silicon |
| EP2039653B1 (de) * | 2007-09-20 | 2015-12-23 | Mitsubishi Materials Corporation | Reaktor für polykristallines silicium und verfahren zur herstellung von polykristallinem silicium |
| RU2010143546A (ru) * | 2008-03-26 | 2012-05-10 | ДжиТи СОЛАР, ИНКОРПОРЕЙТЕД (US) | Реакторная система с золотым покрытием для осаждения поликристаллического кремния и способ |
| JP5727362B2 (ja) * | 2008-03-26 | 2015-06-03 | ジーティーエイティー・コーポレーション | 化学気相蒸着反応器内にガスを流通させるためのシステムおよび方法 |
| KR101639577B1 (ko) * | 2008-04-14 | 2016-07-14 | 헴로크세미컨덕터코포레이션 | 재료를 증착하기 위한 제조 장치와 이에 사용하기 위한 전극 |
| AU2009236679B2 (en) * | 2008-04-14 | 2014-02-27 | Hemlock Semiconductor Corporation | Manufacturing apparatus for depositing a material and an electrode for use therein |
| KR20110008078A (ko) * | 2008-04-14 | 2011-01-25 | 헴로크세미컨덕터코포레이션 | 재료를 증착하기 위한 제조 장치와 이에 사용하기 위한 전극 |
| US11015244B2 (en) | 2013-12-30 | 2021-05-25 | Advanced Material Solutions, Llc | Radiation shielding for a CVD reactor |
| US10450649B2 (en) | 2014-01-29 | 2019-10-22 | Gtat Corporation | Reactor filament assembly with enhanced misalignment tolerance |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US410067A (en) * | 1889-08-27 | Process of facilitating chemical reactions | ||
| US1500789A (en) * | 1920-06-17 | 1924-07-08 | Aoyagi Eiji | Electrometallurgical process for manufacture of ductile bodies of high-fusing metals and alloys of same |
| US1829756A (en) * | 1925-06-18 | 1931-11-03 | Siemens Ag | Homogeneous body consisting of rhenium |
| US2441603A (en) * | 1943-07-28 | 1948-05-18 | Bell Telephone Labor Inc | Electrical translating materials and method of making them |
| NL218408A (de) * | 1954-05-18 | 1900-01-01 | ||
| US2750310A (en) * | 1954-07-17 | 1956-06-12 | Joachim I Franke | Manufacture process of doped germanium crystals |
| US2893850A (en) * | 1956-08-03 | 1959-07-07 | Bichowsky Foord Von | Apparatus for the production of elemental silicon |
-
0
- NL NL238464D patent/NL238464A/xx unknown
- NL NL124690D patent/NL124690C/xx active
-
1958
- 1958-05-29 US US738821A patent/US3058812A/en not_active Expired - Lifetime
-
1959
- 1959-05-14 DE DEW25617A patent/DE1142347B/de active Pending
- 1959-05-14 DE DEW22052U patent/DE1885923U/de not_active Expired
- 1959-05-20 GB GB17138/59A patent/GB875622A/en not_active Expired
- 1959-05-21 CH CH7346259A patent/CH394136A/de unknown
- 1959-05-28 FR FR795886A patent/FR1225567A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR1225567A (fr) | 1960-07-01 |
| DE1142347B (de) | 1963-01-17 |
| DE1885923U (de) | 1964-01-16 |
| NL124690C (de) | |
| CH394136A (de) | 1965-06-30 |
| GB875622A (en) | 1961-08-23 |
| US3058812A (en) | 1962-10-16 |