NL7908310A - Werkwijze voor het vervaardigen van een geintegreerde schakeling. - Google Patents
Werkwijze voor het vervaardigen van een geintegreerde schakeling. Download PDFInfo
- Publication number
- NL7908310A NL7908310A NL7908310A NL7908310A NL7908310A NL 7908310 A NL7908310 A NL 7908310A NL 7908310 A NL7908310 A NL 7908310A NL 7908310 A NL7908310 A NL 7908310A NL 7908310 A NL7908310 A NL 7908310A
- Authority
- NL
- Netherlands
- Prior art keywords
- oxide
- openings
- region
- impurities
- base
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 32
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000012535 impurity Substances 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 238000009413 insulation Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 13
- 230000001590 oxidative effect Effects 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 9
- 238000002955 isolation Methods 0.000 claims description 9
- 239000002019 doping agent Substances 0.000 claims description 8
- 238000005468 ion implantation Methods 0.000 claims description 8
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- 239000000356 contaminant Substances 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims 2
- 238000010276 construction Methods 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- -1 Boron ions Chemical class 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/960,143 US4199380A (en) | 1978-11-13 | 1978-11-13 | Integrated circuit method |
US96014378 | 1978-11-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7908310A true NL7908310A (nl) | 1980-05-16 |
Family
ID=25502843
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7908310A NL7908310A (nl) | 1978-11-13 | 1979-11-13 | Werkwijze voor het vervaardigen van een geintegreerde schakeling. |
Country Status (3)
Country | Link |
---|---|
US (1) | US4199380A (de) |
JP (1) | JPS5571036A (de) |
NL (1) | NL7908310A (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5852339B2 (ja) * | 1979-03-20 | 1983-11-22 | 富士通株式会社 | 半導体装置の製造方法 |
JPS575358A (en) * | 1980-06-13 | 1982-01-12 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
JPS57104240A (en) * | 1980-12-22 | 1982-06-29 | Nec Corp | Semiconductor device |
JPS57139965A (en) * | 1981-02-24 | 1982-08-30 | Toshiba Corp | Manufacture of semiconductor device |
JPS57149770A (en) * | 1981-03-11 | 1982-09-16 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS57194572A (en) * | 1981-05-27 | 1982-11-30 | Clarion Co Ltd | Semiconductor device and manufacture thereof |
US4465528A (en) * | 1981-07-15 | 1984-08-14 | Fujitsu Limited | Method of producing a walled emitter semiconductor device |
EP0071665B1 (de) * | 1981-08-08 | 1986-04-16 | Deutsche ITT Industries GmbH | Verfahren zum Herstellen einer monolithisch integrierten Festkörperschaltung mit mindestens einem bipolaren Planartransistor |
US4443931A (en) * | 1982-06-28 | 1984-04-24 | General Electric Company | Method of fabricating a semiconductor device with a base region having a deep portion |
JPS59161067A (ja) * | 1983-03-04 | 1984-09-11 | Hitachi Micro Comput Eng Ltd | バイポ−ラ型半導体装置の製造方法 |
US4498227A (en) * | 1983-07-05 | 1985-02-12 | Fairchild Camera & Instrument Corporation | Wafer fabrication by implanting through protective layer |
US4630096A (en) * | 1984-05-30 | 1986-12-16 | Motorola, Inc. | High density IC module assembly |
US4583282A (en) * | 1984-09-14 | 1986-04-22 | Motorola, Inc. | Process for self-aligned buried layer, field guard, and isolation |
US4573257A (en) * | 1984-09-14 | 1986-03-04 | Motorola, Inc. | Method of forming self-aligned implanted channel-stop and buried layer utilizing non-single crystal alignment key |
US4574469A (en) * | 1984-09-14 | 1986-03-11 | Motorola, Inc. | Process for self-aligned buried layer, channel-stop, and isolation |
JPS61222137A (ja) * | 1985-03-06 | 1986-10-02 | Sharp Corp | チップ識別用凹凸パターン形成方法 |
JPS63114261A (ja) * | 1986-09-11 | 1988-05-19 | フェアチャイルド セミコンダクタ コーポレーション | トランジスタ用の自己整合型ベース分路 |
US4883772A (en) * | 1986-09-11 | 1989-11-28 | National Semiconductor Corporation | Process for making a self-aligned silicide shunt |
IT1231913B (it) * | 1987-10-23 | 1992-01-15 | Sgs Microelettronica Spa | Procedimento di fabbricazione di transistori ad alta frequenza. |
US5338695A (en) * | 1992-11-24 | 1994-08-16 | National Semiconductor Corporation | Making walled emitter bipolar transistor with reduced base narrowing |
GB0318146D0 (en) * | 2003-08-02 | 2003-09-03 | Zetex Plc | Bipolar transistor with a low saturation voltage |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS507422A (de) * | 1973-05-18 | 1975-01-25 | ||
JPS5648981B2 (de) * | 1973-05-25 | 1981-11-19 | ||
US4079402A (en) * | 1973-07-09 | 1978-03-14 | National Semiconductor Corporation | Zener diode incorporating an ion implanted layer establishing the breakdown point below the surface |
JPS5119484A (en) * | 1974-08-09 | 1976-02-16 | Hitachi Ltd | Handotaisochito sonoseizohoho |
JPS5248978A (en) * | 1975-10-17 | 1977-04-19 | Hitachi Ltd | Process for production of semiconductor device |
JPS5278387A (en) * | 1975-12-24 | 1977-07-01 | Fujitsu Ltd | Production of semiconductor device |
JPS52114280A (en) * | 1976-03-22 | 1977-09-24 | Nec Corp | Bipolar type transistor |
US4060427A (en) * | 1976-04-05 | 1977-11-29 | Ibm Corporation | Method of forming an integrated circuit region through the combination of ion implantation and diffusion steps |
US4066473A (en) * | 1976-07-15 | 1978-01-03 | Fairchild Camera And Instrument Corporation | Method of fabricating high-gain transistors |
US4110125A (en) * | 1977-03-03 | 1978-08-29 | International Business Machines Corporation | Method for fabricating semiconductor devices |
US4111726A (en) * | 1977-04-01 | 1978-09-05 | Burroughs Corporation | Bipolar integrated circuit process by separately forming active and inactive base regions |
US4135954A (en) * | 1977-07-12 | 1979-01-23 | International Business Machines Corporation | Method for fabricating self-aligned semiconductor devices utilizing selectively etchable masking layers |
US4131497A (en) * | 1977-07-12 | 1978-12-26 | International Business Machines Corporation | Method of manufacturing self-aligned semiconductor devices |
US4118250A (en) * | 1977-12-30 | 1978-10-03 | International Business Machines Corporation | Process for producing integrated circuit devices by ion implantation |
US4155778A (en) * | 1977-12-30 | 1979-05-22 | International Business Machines Corporation | Forming semiconductor devices having ion implanted and diffused regions |
-
1978
- 1978-11-13 US US05/960,143 patent/US4199380A/en not_active Expired - Lifetime
-
1979
- 1979-11-09 JP JP14533979A patent/JPS5571036A/ja active Granted
- 1979-11-13 NL NL7908310A patent/NL7908310A/nl not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
JPH0252422B2 (de) | 1990-11-13 |
US4199380A (en) | 1980-04-22 |
JPS5571036A (en) | 1980-05-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A1A | A request for search or an international-type search has been filed | ||
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
A85 | Still pending on 85-01-01 | ||
BV | The patent application has lapsed |