NL7906222A - Beveiligingsinrichting voor het beveiligen van halfge- leidercomponenten voor een laag vermogen. - Google Patents
Beveiligingsinrichting voor het beveiligen van halfge- leidercomponenten voor een laag vermogen. Download PDFInfo
- Publication number
- NL7906222A NL7906222A NL7906222A NL7906222A NL7906222A NL 7906222 A NL7906222 A NL 7906222A NL 7906222 A NL7906222 A NL 7906222A NL 7906222 A NL7906222 A NL 7906222A NL 7906222 A NL7906222 A NL 7906222A
- Authority
- NL
- Netherlands
- Prior art keywords
- protection device
- thyristor
- common
- layer
- plate
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 69
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 7
- 238000005538 encapsulation Methods 0.000 description 4
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 210000003127 knee Anatomy 0.000 description 3
- 229910021339 platinum silicide Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 206010061218 Inflammation Diseases 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000004054 inflammatory process Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 235000015110 jellies Nutrition 0.000 description 1
- 239000008274 jelly Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000001012 protector Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Emergency Protection Circuit Devices (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE7808731A SE414357B (sv) | 1978-08-17 | 1978-08-17 | Overspenningsskydd for skydd av halvledarkomponenter av lageffekttyp |
| SE7808731 | 1978-08-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7906222A true NL7906222A (nl) | 1980-02-19 |
Family
ID=20335606
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7906222A NL7906222A (nl) | 1978-08-17 | 1979-08-15 | Beveiligingsinrichting voor het beveiligen van halfge- leidercomponenten voor een laag vermogen. |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US4282555A (fi) |
| JP (1) | JPS5529297A (fi) |
| AU (1) | AU530976B2 (fi) |
| BR (1) | BR7905258A (fi) |
| DE (1) | DE2932152A1 (fi) |
| FR (1) | FR2433845A1 (fi) |
| GB (1) | GB2030387B (fi) |
| IT (1) | IT1118827B (fi) |
| MX (1) | MX148153A (fi) |
| NL (1) | NL7906222A (fi) |
| SE (1) | SE414357B (fi) |
Families Citing this family (62)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE423946B (sv) * | 1980-10-08 | 1982-06-14 | Asea Ab | Tyristor anordnad for sjelvtendning |
| EP0050034A1 (en) * | 1980-10-14 | 1982-04-21 | Power Integrity Corporation | Transient surge protective circuit |
| US4595941A (en) * | 1980-12-03 | 1986-06-17 | Rca Corporation | Protection circuit for integrated circuit devices |
| SE426002B (sv) * | 1980-12-23 | 1982-11-29 | Ellemtel Utvecklings Ab | Anordning for skydd av en krets i en telekommunikationsutrustning mot overspenningar |
| NL8100242A (nl) * | 1981-01-20 | 1982-08-16 | Philips Nv | Overspanningsbeveiliging van een lijncircuit. |
| SE8105041L (sv) * | 1981-08-25 | 1983-02-26 | Ericsson Telefon Ab L M | Planartransistor med integrerat overspenningsskydd |
| JPS59107539U (ja) * | 1983-01-06 | 1984-07-19 | 東京電力株式会社 | サ−ジ保護回路 |
| JPS60263461A (ja) * | 1984-06-11 | 1985-12-26 | Nec Corp | 高耐圧縦形トランジスタ装置およびその製造方法 |
| HU192996B (en) * | 1984-10-12 | 1987-08-28 | Budapesti Mueszaki Egyetem | Circuit arrangement for automatic overload protection of current transformers |
| EP0186873B1 (en) * | 1984-12-24 | 1991-09-25 | Nippon Telegraph And Telephone Corporation | Protector circuit |
| JPS61150617A (ja) * | 1984-12-24 | 1986-07-09 | 日本電信電話株式会社 | サ−ジ防護回路 |
| US4644440A (en) * | 1985-01-08 | 1987-02-17 | Westinghouse Electric Corp. | Redundant power supply arrangement with surge protection |
| US4644437A (en) * | 1985-11-01 | 1987-02-17 | At&T Bell Laboratories | Telephone subscriber loop overvoltage protection integrated circuit |
| US5012317A (en) * | 1986-04-11 | 1991-04-30 | Texas Instruments Incorporated | Electrostatic discharge protection circuit |
| GB2193596A (en) * | 1986-08-08 | 1988-02-10 | Philips Electronic Associated | A semiconductor diode |
| US4809324A (en) * | 1987-07-27 | 1989-02-28 | Siemens Transmission Systems, Inc. | Subscriber line interface circuit (SLIC) isolation from lighting-induced ground overshoots |
| FR2623663B1 (fr) * | 1987-11-24 | 1990-04-13 | Sgs Thomson Microelectronics | Assemblage monolithique de diodes de protection et systemes de protection |
| JP2570344B2 (ja) * | 1987-12-09 | 1997-01-08 | 三菱電機株式会社 | 画像表示装置 |
| US4905119A (en) * | 1988-06-27 | 1990-02-27 | Teccor Electronics, Inc. | Solid state overvoltage protection circuit |
| US5285100A (en) * | 1988-07-22 | 1994-02-08 | Texas Instruments Incorporated | Semiconductor switching device |
| DE3835569A1 (de) * | 1988-10-19 | 1990-05-03 | Telefunken Electronic Gmbh | Schutzanordnung |
| GB2225908B (en) * | 1988-11-11 | 1993-01-13 | Texas Instruments Ltd | Improvements in or relating to overvoltage protection circuits |
| US4896243A (en) * | 1988-12-20 | 1990-01-23 | Texas Instruments Incorporated | Efficient ESD input protection scheme |
| JPH03249137A (ja) * | 1990-02-28 | 1991-11-07 | Nippon Steel Corp | 焼結原料の装入方法 |
| FR2664760B1 (fr) * | 1990-07-13 | 1996-09-27 | Sgs Thomson Microelectronics | Dispositif de protection contre des surtensions et sa realisation monolithique. |
| FR2664744B1 (fr) * | 1990-07-16 | 1993-08-06 | Sgs Thomson Microelectronics | Diode pin a faible surtension initiale. |
| GB9021222D0 (en) * | 1990-09-28 | 1990-11-14 | Raychem Ltd | Circuit protection device |
| US5341114A (en) * | 1990-11-02 | 1994-08-23 | Ail Systems, Inc. | Integrated limiter and amplifying devices |
| FR2670338B1 (fr) * | 1990-12-07 | 1993-03-26 | Sgs Thomson Microelectronics | Circuit de protection programmable et sa realisation monolithique. |
| FR2670339B1 (fr) * | 1990-12-07 | 1993-03-12 | Sgs Thomson Microelectronics | Circuit de protection limitant les surtensions entre deux limites choisies et son integration monolithique. |
| FR2670340B1 (fr) * | 1990-12-07 | 1993-03-12 | Sgs Thomson Microelectronics | Circuit de protection a faible capacite. |
| JP3375659B2 (ja) * | 1991-03-28 | 2003-02-10 | テキサス インスツルメンツ インコーポレイテツド | 静電放電保護回路の形成方法 |
| FR2677821B1 (fr) * | 1991-06-11 | 1993-10-08 | Sgs Thomson Microelectronics Sa | Composant de protection bidirectionnel. |
| GB2256744A (en) * | 1991-06-11 | 1992-12-16 | Texas Instruments Ltd | A monolithic semiconductor component for transient voltage suppression |
| GB2256743A (en) * | 1991-06-11 | 1992-12-16 | Texas Instruments Ltd | A semiconductor component for transient voltage limiting |
| JP3142617B2 (ja) * | 1991-11-27 | 2001-03-07 | 新電元工業株式会社 | サージ防護素子 |
| FR2688941B1 (fr) * | 1992-03-20 | 1994-06-17 | Sgs Thomson Microelectronics | Interrupteur de tension alternative a declenchement sur une alternance determinee et conduction par periode. |
| CA2136204A1 (en) * | 1992-05-27 | 1993-12-09 | Xixuan Jin | Method for storing fungal cultures and conidia |
| FR2699015B1 (fr) * | 1992-12-04 | 1995-02-24 | Sgs Thomson Microelectronics | Dispositif de protection contre des surtensions. |
| FR2703850B1 (fr) * | 1993-04-09 | 1995-06-30 | Sgs Thomson Microelectronics | Protection d'un alternateur triphase automobile. |
| US5483086A (en) * | 1993-04-20 | 1996-01-09 | Shindengen Electric Manufacturing Co., Ltd. | Four layer semiconductor surge protector having plural short-circuited junctions |
| FR2713400B1 (fr) * | 1993-11-29 | 1996-02-16 | Sgs Thomson Microelectronics | Composant de protection triangle. |
| US5563761A (en) * | 1995-08-11 | 1996-10-08 | The Whitaker Corporation | Transient voltage surge protection assembly for telecommunications lines |
| US5717561A (en) * | 1995-08-11 | 1998-02-10 | The Whitaker Corporation | Sharing arrangement for surge protection circuitry |
| JP3131823B2 (ja) * | 1996-05-16 | 2001-02-05 | 株式会社サンコーシヤ | 多端子サージ防護デバイス |
| US6169672B1 (en) * | 1996-07-03 | 2001-01-02 | Hitachi, Ltd. | Power converter with clamping circuit |
| TW407371B (en) * | 1997-04-25 | 2000-10-01 | Siemens Ag | Equipment to limited alternative current, especially in short-circuit case |
| US5838527A (en) * | 1997-04-29 | 1998-11-17 | Lawrence; Zachary Andrew | Electrical surge protection apparatus |
| CA2339062C (en) * | 1998-05-29 | 2011-04-19 | Porta Systems Corporation | Low capacitance surge protector for high speed data transmission |
| US6377434B1 (en) * | 1999-10-14 | 2002-04-23 | Lucent Technologies Inc. | Individual secondary protection device |
| JP4354069B2 (ja) * | 2000-02-08 | 2009-10-28 | 日本碍子株式会社 | 逆導通機能を有する半導体装置 |
| ITMI20011461A1 (it) * | 2001-07-09 | 2003-01-09 | St Microelectronics Srl | Dispositivo di potenza con circuito stabilizzatore di tensione integrato e procedimento per la realizzazione del medesimo |
| US6680839B2 (en) * | 2001-12-28 | 2004-01-20 | Corning Cable Systems Llc | Apparatus and method for reducing and balancing the capacitance of overvoltage protector in high frequency transmissions |
| US20030123299A1 (en) * | 2002-01-02 | 2003-07-03 | Annavajjhala Ravi P. | Protection circuit |
| GB0215089D0 (en) * | 2002-06-29 | 2002-08-07 | Power Innovations Ltd | Overvoltage protection |
| US7196889B2 (en) * | 2002-11-15 | 2007-03-27 | Medtronic, Inc. | Zener triggered overvoltage protection device |
| US6862162B2 (en) * | 2003-04-23 | 2005-03-01 | Teccor Electronics, Lp | Thyristor circuit providing overcurrent protection to a low impedance load |
| US7515391B2 (en) * | 2005-10-19 | 2009-04-07 | Littlefuse, Inc. | Linear low capacitance overvoltage protection circuit |
| US20070236849A1 (en) * | 2006-04-06 | 2007-10-11 | Littelfuse, Inc. | Leadless integrated circuit protection device |
| US8649149B1 (en) * | 2011-03-07 | 2014-02-11 | Adtran, Inc. | Dual level surge protector circuit for telecommunication line |
| CN104412339B (zh) * | 2012-07-05 | 2017-10-17 | 保险丝公司 | 用于电压瞬变电路保护的撬棒器件 |
| FR3004019A1 (fr) * | 2013-03-29 | 2014-10-03 | St Microelectronics Tours Sas | Composant de protection contre des surtensions |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL113254C (fi) * | 1960-11-17 | |||
| GB960667A (en) * | 1961-04-26 | 1964-06-10 | Gen Electric | Voltage surge protector |
| US3475653A (en) * | 1965-01-11 | 1969-10-28 | Res Iii Inc | Electrical circuit protector |
| US3631264A (en) * | 1970-02-11 | 1971-12-28 | Sybron Corp | Intrinsically safe electrical barrier system and improvements therein |
| FR2096663B1 (fi) * | 1970-05-12 | 1973-07-13 | Edf | |
| GB1412036A (en) * | 1972-04-06 | 1975-10-29 | Foxboro Co | Interface assembly in a process control system for use where there is a fire hazard |
| US3904931A (en) * | 1973-08-03 | 1975-09-09 | Rca Corp | Overvoltage protection circuit |
| CA1029797A (en) * | 1974-03-27 | 1978-04-18 | Homer M. Wilson | Redundant intrinsic safety barrier |
| DD111128A1 (fi) * | 1974-04-08 | 1975-01-20 | ||
| JPS515633U (fi) * | 1974-06-28 | 1976-01-16 | ||
| DE2436033A1 (de) * | 1974-07-26 | 1976-02-05 | Bbc Brown Boveri & Cie | Schaltungsanordnung zum schutz der loeschthyristoren von stromrichtern |
| JPS5172216A (en) * | 1974-12-20 | 1976-06-22 | Hitachi Ltd | Handotaitsuwaromono hogokairo |
| JPS5329551A (en) * | 1976-08-31 | 1978-03-18 | Shikoku Elec Power | Thunder arresting circuit |
| US4158863A (en) * | 1978-03-07 | 1979-06-19 | American Optical Corporation | Input overload protection circuit |
-
1978
- 1978-08-17 SE SE7808731A patent/SE414357B/sv not_active IP Right Cessation
-
1979
- 1979-06-11 MX MX178021A patent/MX148153A/es unknown
- 1979-08-08 DE DE19792932152 patent/DE2932152A1/de active Granted
- 1979-08-13 AU AU49849/79A patent/AU530976B2/en not_active Ceased
- 1979-08-13 US US06/065,774 patent/US4282555A/en not_active Expired - Lifetime
- 1979-08-14 FR FR7920693A patent/FR2433845A1/fr active Granted
- 1979-08-15 JP JP10392179A patent/JPS5529297A/ja active Granted
- 1979-08-15 NL NL7906222A patent/NL7906222A/nl not_active Application Discontinuation
- 1979-08-16 IT IT6867479A patent/IT1118827B/it active
- 1979-08-16 BR BR7905258A patent/BR7905258A/pt not_active IP Right Cessation
- 1979-08-16 GB GB7928629A patent/GB2030387B/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| AU530976B2 (en) | 1983-08-04 |
| BR7905258A (pt) | 1980-05-06 |
| SE414357B (sv) | 1980-07-21 |
| GB2030387B (en) | 1983-05-05 |
| MX148153A (es) | 1983-03-18 |
| IT7968674A0 (it) | 1979-08-16 |
| SE7808731L (sv) | 1980-02-18 |
| AU4984979A (en) | 1980-02-21 |
| DE2932152A1 (de) | 1980-02-28 |
| JPH0145296B2 (fi) | 1989-10-03 |
| IT1118827B (it) | 1986-03-03 |
| FR2433845B1 (fi) | 1984-10-26 |
| JPS5529297A (en) | 1980-03-01 |
| US4282555A (en) | 1981-08-04 |
| DE2932152C2 (fi) | 1988-08-11 |
| GB2030387A (en) | 1980-04-02 |
| FR2433845A1 (fr) | 1980-03-14 |
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