NL7808060A - Halfgeleiderelement. - Google Patents

Halfgeleiderelement.

Info

Publication number
NL7808060A
NL7808060A NL787808060A NL7808060A NL7808060A NL 7808060 A NL7808060 A NL 7808060A NL 787808060 A NL787808060 A NL 787808060A NL 7808060 A NL7808060 A NL 7808060A NL 7808060 A NL7808060 A NL 7808060A
Authority
NL
Netherlands
Prior art keywords
semiconductor element
semiconductor
Prior art date
Application number
NL787808060A
Other languages
English (en)
Dutch (nl)
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of NL7808060A publication Critical patent/NL7808060A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
NL787808060A 1977-08-10 1978-07-31 Halfgeleiderelement. NL7808060A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52095045A JPS5910587B2 (ja) 1977-08-10 1977-08-10 半導体装置の保護装置

Publications (1)

Publication Number Publication Date
NL7808060A true NL7808060A (nl) 1979-02-13

Family

ID=14127088

Family Applications (1)

Application Number Title Priority Date Filing Date
NL787808060A NL7808060A (nl) 1977-08-10 1978-07-31 Halfgeleiderelement.

Country Status (4)

Country Link
US (1) US4261004A (de)
JP (1) JPS5910587B2 (de)
DE (1) DE2834759C2 (de)
NL (1) NL7808060A (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55134976A (en) * 1979-04-09 1980-10-21 Nec Corp Semiconductor device
JPS5737876A (en) * 1980-08-20 1982-03-02 Hitachi Ltd Semiconductor integrated circuit apparatus
JPS5825264A (ja) * 1981-08-07 1983-02-15 Hitachi Ltd 絶縁ゲート型半導体装置
JPS5856355A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd 半導体集積回路装置
US4599639A (en) * 1982-04-19 1986-07-08 Texas Instruments Incorporated Process protection for individual device gates on large area MIS devices
DE3334167A1 (de) * 1983-09-21 1985-04-04 Siemens AG, 1000 Berlin und 8000 München Halbleiterdiode
JPS60152055A (ja) * 1984-01-20 1985-08-10 Matsushita Electric Ind Co Ltd 相補型ｍｏｓ半導体装置
US4757363A (en) * 1984-09-14 1988-07-12 Harris Corporation ESD protection network for IGFET circuits with SCR prevention guard rings
JPS61185962A (ja) * 1985-02-13 1986-08-19 Nec Corp 相補型ｍｏｓ集積回路
US5136348A (en) * 1986-10-08 1992-08-04 Nippondenso Co., Ltd. Structure and manufacturing method for thin-film semiconductor diode device
JP2545527B2 (ja) * 1987-01-23 1996-10-23 沖電気工業株式会社 半導体装置
US5214497A (en) * 1988-05-25 1993-05-25 Hitachi, Ltd. Polycrystalline silicon resistor for use in a semiconductor integrated circuit having a memory device
DE4308624A1 (de) * 1993-03-18 1994-09-22 Abb Management Ag MOS-gesteuertes Leistungshalbleiterbauelement
JP4535668B2 (ja) * 2002-09-09 2010-09-01 三洋電機株式会社 半導体装置
EP1538673A4 (de) 2002-09-09 2009-07-15 Sanyo Electric Co Schutzeinrichtung
US7199446B1 (en) * 2003-02-18 2007-04-03 K2 Optronics, Inc. Stacked electrical resistor pad for optical fiber attachment
JP4939749B2 (ja) 2004-12-22 2012-05-30 オンセミコンダクター・トレーディング・リミテッド 化合物半導体スイッチ回路装置
JP4939750B2 (ja) * 2004-12-22 2012-05-30 オンセミコンダクター・トレーディング・リミテッド 化合物半導体スイッチ回路装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1803392A1 (de) * 1968-10-16 1970-06-18 Siemens Ag Schutzvorrichtung fuer einen Feldeffekttransistor
US3739238A (en) * 1969-09-24 1973-06-12 Tokyo Shibaura Electric Co Semiconductor device with a field effect transistor
JPS5513433B2 (de) * 1974-08-29 1980-04-09
US4110776A (en) * 1976-09-27 1978-08-29 Texas Instruments Incorporated Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer

Also Published As

Publication number Publication date
DE2834759C2 (de) 1983-11-03
US4261004A (en) 1981-04-07
JPS5910587B2 (ja) 1984-03-09
JPS5429984A (en) 1979-03-06
DE2834759A1 (de) 1979-02-15

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Legal Events

Date Code Title Description
BB A search report has been drawn up
A85 Still pending on 85-01-01
BC A request for examination has been filed
BV The patent application has lapsed