NL7713051A - Halfgeleiderinrichting met een permanent geheu- gen en werkwijze ter vervaardiging van een der- gelijke halfgeleiderinrichting. - Google Patents

Halfgeleiderinrichting met een permanent geheu- gen en werkwijze ter vervaardiging van een der- gelijke halfgeleiderinrichting.

Info

Publication number
NL7713051A
NL7713051A NL7713051A NL7713051A NL7713051A NL 7713051 A NL7713051 A NL 7713051A NL 7713051 A NL7713051 A NL 7713051A NL 7713051 A NL7713051 A NL 7713051A NL 7713051 A NL7713051 A NL 7713051A
Authority
NL
Netherlands
Prior art keywords
semi
conductor device
manufacture
permanent memory
conductor
Prior art date
Application number
NL7713051A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL7713051A priority Critical patent/NL7713051A/xx
Priority to CA000315429A priority patent/CA1135856A/en
Priority to SE7812078A priority patent/SE7812078L/xx
Priority to CH1209178A priority patent/CH637784A5/de
Priority to IT30198/78A priority patent/IT1100364B/it
Priority to AU41936/78A priority patent/AU524244B2/en
Priority to MX175728A priority patent/MX145951A/es
Priority to GB7845933A priority patent/GB2009507B/en
Priority to AT0842978A priority patent/AT374033B/de
Priority to DE2850864A priority patent/DE2850864C2/de
Priority to ES475412A priority patent/ES475412A1/es
Priority to JP14499978A priority patent/JPS5482985A/ja
Priority to FR7833435A priority patent/FR2410336A1/fr
Priority to BR7807786A priority patent/BR7807786A/pt
Publication of NL7713051A publication Critical patent/NL7713051A/xx
Priority to US06/219,059 priority patent/US4399450A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1021Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/06Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using diode elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/91Diode arrays, e.g. diode read-only memory array
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/926Elongated lead extending axially through another elongated lead

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
NL7713051A 1977-11-28 1977-11-28 Halfgeleiderinrichting met een permanent geheu- gen en werkwijze ter vervaardiging van een der- gelijke halfgeleiderinrichting. NL7713051A (nl)

Priority Applications (15)

Application Number Priority Date Filing Date Title
NL7713051A NL7713051A (nl) 1977-11-28 1977-11-28 Halfgeleiderinrichting met een permanent geheu- gen en werkwijze ter vervaardiging van een der- gelijke halfgeleiderinrichting.
CA000315429A CA1135856A (en) 1977-11-28 1978-10-31 Semiconductor device having a fixed memory
SE7812078A SE7812078L (sv) 1977-11-28 1978-11-23 Halvledaranordning med permanentminne och sett att framstella en dylik halvledaranordning
GB7845933A GB2009507B (en) 1977-11-28 1978-11-24 Semiconductor devices and their manufacture
IT30198/78A IT1100364B (it) 1977-11-28 1978-11-24 Dispositivo semiconduttore dotato di una memoria fissa e metodo di fabbricazione dello stesso
AU41936/78A AU524244B2 (en) 1977-11-28 1978-11-24 Fixed memory semiconductor device
MX175728A MX145951A (es) 1977-11-28 1978-11-24 Mejoras en dispositivo semiconductor que tiene una memoria fija
CH1209178A CH637784A5 (de) 1977-11-28 1978-11-24 Halbleiteranordnung mit einem festwertspeicher und verfahren zur herstellung einer derartigen halbleiteranordnung.
AT0842978A AT374033B (de) 1977-11-28 1978-11-24 Halbleiteranordnung mit einem festwertspeicher und verfahren zur herstellung einer derartigen halbleiteranordnung
DE2850864A DE2850864C2 (de) 1977-11-28 1978-11-24 Halbleiteranordnung mit einem Festwertspeicher und Verfahren zur Herstellung einer derartigen Halbleiteranordnung
ES475412A ES475412A1 (es) 1977-11-28 1978-11-25 Un dispositivo semiconductor
JP14499978A JPS5482985A (en) 1977-11-28 1978-11-25 Semiconductor having fixed memory and method of fabricating same
FR7833435A FR2410336A1 (fr) 1977-11-28 1978-11-27 Dispositif semi-conducteur a memoire permanente et procede pour fabriquer un tel dispositif
BR7807786A BR7807786A (pt) 1977-11-28 1978-11-27 Dispositivo semicondutor dotado de uma memoria fixa ou permanente e processo de sua fabricacao
US06/219,059 US4399450A (en) 1977-11-28 1980-12-22 ROM With poly-Si to mono-Si diodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7713051A NL7713051A (nl) 1977-11-28 1977-11-28 Halfgeleiderinrichting met een permanent geheu- gen en werkwijze ter vervaardiging van een der- gelijke halfgeleiderinrichting.

Publications (1)

Publication Number Publication Date
NL7713051A true NL7713051A (nl) 1979-05-30

Family

ID=19829630

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7713051A NL7713051A (nl) 1977-11-28 1977-11-28 Halfgeleiderinrichting met een permanent geheu- gen en werkwijze ter vervaardiging van een der- gelijke halfgeleiderinrichting.

Country Status (15)

Country Link
US (1) US4399450A (de)
JP (1) JPS5482985A (de)
AT (1) AT374033B (de)
AU (1) AU524244B2 (de)
BR (1) BR7807786A (de)
CA (1) CA1135856A (de)
CH (1) CH637784A5 (de)
DE (1) DE2850864C2 (de)
ES (1) ES475412A1 (de)
FR (1) FR2410336A1 (de)
GB (1) GB2009507B (de)
IT (1) IT1100364B (de)
MX (1) MX145951A (de)
NL (1) NL7713051A (de)
SE (1) SE7812078L (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2471023A1 (fr) * 1979-12-07 1981-06-12 Ibm France Reseau matriciel d'elements semi-conducteurs
US4589008A (en) * 1980-01-28 1986-05-13 Rca Corporation Apparatus for electrically joining the ends of substantially parallel semiconductor lines
JPS5710926A (en) * 1980-06-25 1982-01-20 Toshiba Corp Manufacture of semiconductor device
JPS57104253A (en) * 1980-12-19 1982-06-29 Matsushita Electric Ind Co Ltd Semiconductor memory device
US5148256A (en) * 1981-02-23 1992-09-15 Unisys Corporation Digital computer having an interconnect mechanism stacked above a semiconductor substrate
US4608585A (en) * 1982-07-30 1986-08-26 Signetics Corporation Electrically erasable PROM cell
US4876220A (en) * 1986-05-16 1989-10-24 Actel Corporation Method of making programmable low impedance interconnect diode element
US4881114A (en) * 1986-05-16 1989-11-14 Actel Corporation Selectively formable vertical diode circuit element
JPS6356624A (ja) * 1986-08-27 1988-03-11 Hoya Corp フアラデ−ロ−テ−タと光アイソレ−タ
US5194749A (en) * 1987-11-30 1993-03-16 Hitachi, Ltd. Semiconductor integrated circuit device
KR960010736B1 (ko) * 1991-02-19 1996-08-07 미쓰비시뎅끼 가부시끼가이샤 마스크 rom 및 그 제조방법
US5661047A (en) * 1994-10-05 1997-08-26 United Microelectronics Corporation Method for forming bipolar ROM device
US5909049A (en) * 1997-02-11 1999-06-01 Actel Corporation Antifuse programmed PROM cell

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2023219C3 (de) * 1970-05-12 1979-09-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen Programmierbarer Halbleiter-Festwertspeicher
JPS5816337B2 (ja) * 1975-06-13 1983-03-30 日本電気株式会社 半導体装置の製造方法
JPS5240081A (en) * 1975-09-26 1977-03-28 Hitachi Ltd Bi-polar rom
GB1572703A (en) * 1975-12-10 1980-07-30 Tokyo Shibaura Electric Co Semiconductor device and method of producing a semiconductor device
US4148055A (en) * 1975-12-29 1979-04-03 U.S. Philips Corporation Integrated circuit having complementary bipolar transistors
US4160989A (en) * 1975-12-29 1979-07-10 U.S. Philips Corporation Integrated circuit having complementary bipolar transistors
US4099260A (en) * 1976-09-20 1978-07-04 Bell Telephone Laboratories, Incorporated Bipolar read-only-memory unit having self-isolating bit-lines
JPS5416990A (en) * 1977-07-08 1979-02-07 Hitachi Ltd Matrix form logic circuit

Also Published As

Publication number Publication date
AT374033B (de) 1984-03-12
CH637784A5 (de) 1983-08-15
DE2850864C2 (de) 1985-04-25
GB2009507A (en) 1979-06-13
AU524244B2 (en) 1982-09-09
AU4193678A (en) 1979-06-07
ATA842978A (de) 1983-07-15
JPS5482985A (en) 1979-07-02
SE7812078L (sv) 1979-05-29
JPS6156627B2 (de) 1986-12-03
ES475412A1 (es) 1979-03-16
GB2009507B (en) 1982-03-24
FR2410336B1 (de) 1985-04-05
IT7830198A0 (it) 1978-11-24
DE2850864A1 (de) 1979-05-31
IT1100364B (it) 1985-09-28
MX145951A (es) 1982-04-23
BR7807786A (pt) 1979-06-26
CA1135856A (en) 1982-11-16
US4399450A (en) 1983-08-16
FR2410336A1 (fr) 1979-06-22

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Legal Events

Date Code Title Description
A1B A search report has been drawn up
BC A request for examination has been filed
A85 Still pending on 85-01-01
BV The patent application has lapsed