AT374033B - Halbleiteranordnung mit einem festwertspeicher und verfahren zur herstellung einer derartigen halbleiteranordnung - Google Patents

Halbleiteranordnung mit einem festwertspeicher und verfahren zur herstellung einer derartigen halbleiteranordnung

Info

Publication number
AT374033B
AT374033B AT0842978A AT842978A AT374033B AT 374033 B AT374033 B AT 374033B AT 0842978 A AT0842978 A AT 0842978A AT 842978 A AT842978 A AT 842978A AT 374033 B AT374033 B AT 374033B
Authority
AT
Austria
Prior art keywords
semiconductor arrangement
producing
fixed value
value storage
semiconductor
Prior art date
Application number
AT0842978A
Other languages
English (en)
Other versions
ATA842978A (de
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of ATA842978A publication Critical patent/ATA842978A/de
Application granted granted Critical
Publication of AT374033B publication Critical patent/AT374033B/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/06—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using diode elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/91—Diode arrays, e.g. diode read-only memory array
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/926—Elongated lead extending axially through another elongated lead
AT0842978A 1977-11-28 1978-11-24 Halbleiteranordnung mit einem festwertspeicher und verfahren zur herstellung einer derartigen halbleiteranordnung AT374033B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7713051A NL7713051A (nl) 1977-11-28 1977-11-28 Halfgeleiderinrichting met een permanent geheu- gen en werkwijze ter vervaardiging van een der- gelijke halfgeleiderinrichting.

Publications (2)

Publication Number Publication Date
ATA842978A ATA842978A (de) 1983-07-15
AT374033B true AT374033B (de) 1984-03-12

Family

ID=19829630

Family Applications (1)

Application Number Title Priority Date Filing Date
AT0842978A AT374033B (de) 1977-11-28 1978-11-24 Halbleiteranordnung mit einem festwertspeicher und verfahren zur herstellung einer derartigen halbleiteranordnung

Country Status (15)

Country Link
US (1) US4399450A (de)
JP (1) JPS5482985A (de)
AT (1) AT374033B (de)
AU (1) AU524244B2 (de)
BR (1) BR7807786A (de)
CA (1) CA1135856A (de)
CH (1) CH637784A5 (de)
DE (1) DE2850864C2 (de)
ES (1) ES475412A1 (de)
FR (1) FR2410336A1 (de)
GB (1) GB2009507B (de)
IT (1) IT1100364B (de)
MX (1) MX145951A (de)
NL (1) NL7713051A (de)
SE (1) SE7812078L (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2471023A1 (fr) * 1979-12-07 1981-06-12 Ibm France Reseau matriciel d'elements semi-conducteurs
US4589008A (en) * 1980-01-28 1986-05-13 Rca Corporation Apparatus for electrically joining the ends of substantially parallel semiconductor lines
JPS5710926A (en) * 1980-06-25 1982-01-20 Toshiba Corp Manufacture of semiconductor device
JPS57104253A (en) * 1980-12-19 1982-06-29 Matsushita Electric Ind Co Ltd Semiconductor memory device
US5148256A (en) * 1981-02-23 1992-09-15 Unisys Corporation Digital computer having an interconnect mechanism stacked above a semiconductor substrate
US4608585A (en) * 1982-07-30 1986-08-26 Signetics Corporation Electrically erasable PROM cell
US4881114A (en) * 1986-05-16 1989-11-14 Actel Corporation Selectively formable vertical diode circuit element
US4876220A (en) * 1986-05-16 1989-10-24 Actel Corporation Method of making programmable low impedance interconnect diode element
JPS6356624A (ja) * 1986-08-27 1988-03-11 Hoya Corp フアラデ−ロ−テ−タと光アイソレ−タ
US5194749A (en) * 1987-11-30 1993-03-16 Hitachi, Ltd. Semiconductor integrated circuit device
KR960010736B1 (ko) * 1991-02-19 1996-08-07 미쓰비시뎅끼 가부시끼가이샤 마스크 rom 및 그 제조방법
US5661047A (en) * 1994-10-05 1997-08-26 United Microelectronics Corporation Method for forming bipolar ROM device
US5909049A (en) * 1997-02-11 1999-06-01 Actel Corporation Antifuse programmed PROM cell

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2023219C3 (de) * 1970-05-12 1979-09-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen Programmierbarer Halbleiter-Festwertspeicher
JPS5816337B2 (ja) * 1975-06-13 1983-03-30 日本電気株式会社 半導体装置の製造方法
JPS5240081A (en) * 1975-09-26 1977-03-28 Hitachi Ltd Bi-polar rom
GB1572703A (en) * 1975-12-10 1980-07-30 Tokyo Shibaura Electric Co Semiconductor device and method of producing a semiconductor device
US4148055A (en) * 1975-12-29 1979-04-03 U.S. Philips Corporation Integrated circuit having complementary bipolar transistors
US4160989A (en) * 1975-12-29 1979-07-10 U.S. Philips Corporation Integrated circuit having complementary bipolar transistors
US4099260A (en) * 1976-09-20 1978-07-04 Bell Telephone Laboratories, Incorporated Bipolar read-only-memory unit having self-isolating bit-lines
JPS5416990A (en) * 1977-07-08 1979-02-07 Hitachi Ltd Matrix form logic circuit

Also Published As

Publication number Publication date
GB2009507A (en) 1979-06-13
IT7830198A0 (it) 1978-11-24
IT1100364B (it) 1985-09-28
ES475412A1 (es) 1979-03-16
CH637784A5 (de) 1983-08-15
JPS6156627B2 (de) 1986-12-03
MX145951A (es) 1982-04-23
DE2850864A1 (de) 1979-05-31
DE2850864C2 (de) 1985-04-25
AU4193678A (en) 1979-06-07
FR2410336B1 (de) 1985-04-05
ATA842978A (de) 1983-07-15
FR2410336A1 (fr) 1979-06-22
CA1135856A (en) 1982-11-16
JPS5482985A (en) 1979-07-02
SE7812078L (sv) 1979-05-29
NL7713051A (nl) 1979-05-30
BR7807786A (pt) 1979-06-26
GB2009507B (en) 1982-03-24
AU524244B2 (en) 1982-09-09
US4399450A (en) 1983-08-16

Similar Documents

Publication Publication Date Title
ATA932977A (de) Verfahren zur herstellung einer materialbahn
AT352515B (de) Verfahren zur herstellung von dragees
AT352884B (de) Verfahren zur herstellung von dragees
ATA196177A (de) Verfahren zur herstellung von chlordioxid
DD132091A5 (de) Verfahren zur herstellung einer halbleiteranordnung
AT344899B (de) Verfahren zur herstellung von anthracyclinglycosiden
AT374033B (de) Halbleiteranordnung mit einem festwertspeicher und verfahren zur herstellung einer derartigen halbleiteranordnung
AT353251B (de) Verfahren zur herstellung von m- phenoxybenzaldehyd
DD130013A5 (de) Verfahren zur herstellung einer metallfolie
AT363177B (de) Verfahren zur herstellung einer stabilen thymosinfraktion 5
AT362559B (de) Tank und verfahren zur herstellung desselben
AT358729B (de) Verfahren zur herstellung von 3-halogenmethyl-3 -cephemen
AT347437B (de) Verfahren zur herstellung von benzoylcyanid
AT352138B (de) Verfahren zur herstellung von 2-chlorsulfinyl- azetidin-4-onen
AT347439B (de) Verfahren zur herstellung von benzoylcyanid
AT358820B (de) Verfahren zur herstellung einer festen giess- mischung
AT364817B (de) Verfahren zur herstellung von aminocyclolen
AT350036B (de) Verfahren zur herstellung von zinnii-sulfat
AT347438B (de) Verfahren zur herstellung von benzoylcyanid
AT355013B (de) Verfahren zur herstellung von 2-oxo-pyrrolidin- n-alkylamiden
AT356826B (de) Verfahren zur herstellung von cholecystokinin- -pancreozymin-octapeptidamid-sulfatester
AT374809B (de) Verfahren zur herstellung von alkalizellulose
DD128972A1 (de) Verfahren zur herstellung einer schuettgutkippe mit bandabsetzern
AT347851B (de) Verfahren zur herstellung eines behaelters
DD129064A1 (de) Verfahren zur herstellung einer hochkopffesten ottokraftstoffkomponente

Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee