NL7301465A - - Google Patents

Info

Publication number
NL7301465A
NL7301465A NL7301465A NL7301465A NL7301465A NL 7301465 A NL7301465 A NL 7301465A NL 7301465 A NL7301465 A NL 7301465A NL 7301465 A NL7301465 A NL 7301465A NL 7301465 A NL7301465 A NL 7301465A
Authority
NL
Netherlands
Application number
NL7301465A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7301465A publication Critical patent/NL7301465A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1064—Seed pulling including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NL7301465A 1972-03-01 1973-02-01 NL7301465A (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722209869 DE2209869B1 (de) 1972-03-01 1972-03-01 Verfahren zur herstellung eines versetzungsfreien einkristallinen galliumarsenidstabes

Publications (1)

Publication Number Publication Date
NL7301465A true NL7301465A (enrdf_load_stackoverflow) 1973-09-04

Family

ID=5837589

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7301465A NL7301465A (enrdf_load_stackoverflow) 1972-03-01 1973-02-01

Country Status (7)

Country Link
US (1) US3819421A (enrdf_load_stackoverflow)
JP (1) JPS48102569A (enrdf_load_stackoverflow)
BE (1) BE795938A (enrdf_load_stackoverflow)
CH (1) CH591893A5 (enrdf_load_stackoverflow)
DE (1) DE2209869B1 (enrdf_load_stackoverflow)
GB (1) GB1408215A (enrdf_load_stackoverflow)
NL (1) NL7301465A (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2420899A1 (de) * 1974-04-30 1975-12-11 Wacker Chemitronic Verfahren zur herstellung von einkristallinem galliumarsenid
IT1207497B (it) * 1985-05-29 1989-05-25 Montedison Spa Monocristalli di arseniuro di gallio a bassa densita' di dislocazioni e di elevata purezza.
US5578284A (en) * 1995-06-07 1996-11-26 Memc Electronic Materials, Inc. Silicon single crystal having eliminated dislocation in its neck
JPH09255485A (ja) * 1996-03-15 1997-09-30 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法および種結晶
JP3850500B2 (ja) * 1996-12-06 2006-11-29 コマツ電子金属株式会社 磁場印加単結晶引上げ装置用種結晶保持器
CN110528061A (zh) * 2018-05-23 2019-12-03 中国科学院金属研究所 一种激光辅助加热生长大尺寸晶体的方法及专用设备
CN112359409A (zh) * 2020-12-10 2021-02-12 广东先导先进材料股份有限公司 一种砷化镓单晶生长装置及生长方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2962363A (en) * 1957-07-09 1960-11-29 Pacific Semiconductors Inc Crystal pulling apparatus and method
US3344071A (en) * 1963-09-25 1967-09-26 Texas Instruments Inc High resistivity chromium doped gallium arsenide and process of making same
DE1233828B (de) * 1964-07-03 1967-02-09 Wacker Chemie Gmbh Verfahren zur Herstellung, Reinigung und/oder Dotierung von ein- oder polykristallinen Halbleiterverbindungen
FR1473984A (fr) * 1966-01-10 1967-03-24 Radiotechnique Coprim Rtc Procédé et dispositif destinés à la fabrication de composés binaires monocristallins
FR1568042A (enrdf_load_stackoverflow) * 1968-01-18 1969-05-23

Also Published As

Publication number Publication date
GB1408215A (en) 1975-10-01
US3819421A (en) 1974-06-25
DE2209869B1 (de) 1973-06-20
BE795938A (fr) 1973-08-27
JPS48102569A (enrdf_load_stackoverflow) 1973-12-22
CH591893A5 (enrdf_load_stackoverflow) 1977-10-14
DE2209869C2 (enrdf_load_stackoverflow) 1974-01-24

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