NL7301465A - - Google Patents
Info
- Publication number
- NL7301465A NL7301465A NL7301465A NL7301465A NL7301465A NL 7301465 A NL7301465 A NL 7301465A NL 7301465 A NL7301465 A NL 7301465A NL 7301465 A NL7301465 A NL 7301465A NL 7301465 A NL7301465 A NL 7301465A
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/906—Special atmosphere other than vacuum or inert
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1064—Seed pulling including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19722209869 DE2209869B1 (de) | 1972-03-01 | 1972-03-01 | Verfahren zur herstellung eines versetzungsfreien einkristallinen galliumarsenidstabes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7301465A true NL7301465A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1973-09-04 |
Family
ID=5837589
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7301465A NL7301465A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1972-03-01 | 1973-02-01 |
Country Status (7)
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2420899A1 (de) * | 1974-04-30 | 1975-12-11 | Wacker Chemitronic | Verfahren zur herstellung von einkristallinem galliumarsenid |
| IT1207497B (it) * | 1985-05-29 | 1989-05-25 | Montedison Spa | Monocristalli di arseniuro di gallio a bassa densita' di dislocazioni e di elevata purezza. |
| US5578284A (en) * | 1995-06-07 | 1996-11-26 | Memc Electronic Materials, Inc. | Silicon single crystal having eliminated dislocation in its neck |
| JPH09255485A (ja) * | 1996-03-15 | 1997-09-30 | Shin Etsu Handotai Co Ltd | シリコン単結晶の製造方法および種結晶 |
| JP3850500B2 (ja) * | 1996-12-06 | 2006-11-29 | コマツ電子金属株式会社 | 磁場印加単結晶引上げ装置用種結晶保持器 |
| CN110528061A (zh) * | 2018-05-23 | 2019-12-03 | 中国科学院金属研究所 | 一种激光辅助加热生长大尺寸晶体的方法及专用设备 |
| CN112359409A (zh) * | 2020-12-10 | 2021-02-12 | 广东先导先进材料股份有限公司 | 一种砷化镓单晶生长装置及生长方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2962363A (en) * | 1957-07-09 | 1960-11-29 | Pacific Semiconductors Inc | Crystal pulling apparatus and method |
| US3344071A (en) * | 1963-09-25 | 1967-09-26 | Texas Instruments Inc | High resistivity chromium doped gallium arsenide and process of making same |
| DE1233828B (de) * | 1964-07-03 | 1967-02-09 | Wacker Chemie Gmbh | Verfahren zur Herstellung, Reinigung und/oder Dotierung von ein- oder polykristallinen Halbleiterverbindungen |
| FR1473984A (fr) * | 1966-01-10 | 1967-03-24 | Radiotechnique Coprim Rtc | Procédé et dispositif destinés à la fabrication de composés binaires monocristallins |
| FR1568042A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1968-01-18 | 1969-05-23 |
-
0
- BE BE795938D patent/BE795938A/xx unknown
-
1972
- 1972-03-01 DE DE19722209869 patent/DE2209869B1/de active Granted
-
1973
- 1973-01-30 CH CH131973A patent/CH591893A5/xx not_active IP Right Cessation
- 1973-02-01 NL NL7301465A patent/NL7301465A/xx unknown
- 1973-02-22 US US00334935A patent/US3819421A/en not_active Expired - Lifetime
- 1973-02-28 GB GB983673A patent/GB1408215A/en not_active Expired
- 1973-03-01 JP JP48024724A patent/JPS48102569A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS48102569A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1973-12-22 |
| US3819421A (en) | 1974-06-25 |
| DE2209869B1 (de) | 1973-06-20 |
| BE795938A (fr) | 1973-08-27 |
| GB1408215A (en) | 1975-10-01 |
| DE2209869C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1974-01-24 |
| CH591893A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1977-10-14 |