NL7014024A - - Google Patents
Info
- Publication number
- NL7014024A NL7014024A NL7014024A NL7014024A NL7014024A NL 7014024 A NL7014024 A NL 7014024A NL 7014024 A NL7014024 A NL 7014024A NL 7014024 A NL7014024 A NL 7014024A NL 7014024 A NL7014024 A NL 7014024A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76819—Smoothing of the dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/133—Reflow oxides and glasses
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24851—Intermediate layer is discontinuous or differential
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US484170A | 1970-01-22 | 1970-01-22 | |
US00292510A US3825442A (en) | 1970-01-22 | 1972-09-27 | Method of a semiconductor device wherein film cracking is prevented by formation of a glass layer |
Publications (2)
Publication Number | Publication Date |
---|---|
NL7014024A true NL7014024A (nl) | 1971-07-26 |
NL151560B NL151560B (nl) | 1976-11-15 |
Family
ID=26673563
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL707014024A NL151560B (nl) | 1970-01-22 | 1970-09-23 | Werkwijze voor het vervaardigen van een halfgeleiderinrichting voorzien van een isolerende glaslaag en halfgeleiderinrichting vervaardigd volgens de werkwijze. |
Country Status (5)
Country | Link |
---|---|
US (1) | US3825442A (nl) |
DE (1) | DE2040180B2 (nl) |
FR (1) | FR2077260B1 (nl) |
GB (1) | GB1326947A (nl) |
NL (1) | NL151560B (nl) |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3833919A (en) * | 1972-10-12 | 1974-09-03 | Ncr | Multilevel conductor structure and method |
US3986903A (en) * | 1974-03-13 | 1976-10-19 | Intel Corporation | Mosfet transistor and method of fabrication |
US4030952A (en) * | 1974-04-18 | 1977-06-21 | Fairchild Camera And Instrument Corporation | Method of MOS circuit fabrication |
US3887733A (en) * | 1974-04-24 | 1975-06-03 | Motorola Inc | Doped oxide reflow process |
US3912558A (en) * | 1974-05-03 | 1975-10-14 | Fairchild Camera Instr Co | Method of MOS circuit fabrication |
DE2445594A1 (de) * | 1974-09-24 | 1976-04-08 | Siemens Ag | Verfahren zur herstellung integrierter schaltungen |
JPS5142480A (en) * | 1974-10-08 | 1976-04-10 | Nippon Electric Co | Handotaisochino seizohoho |
GB1504484A (en) * | 1975-08-13 | 1978-03-22 | Tokyo Shibaura Electric Co | Semiconductor device and a method for manufacturing the same |
DE2634095C2 (de) * | 1976-07-29 | 1982-11-04 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zur Abflachung und Einebnung von Stufen auf der Oberfläche einer integrierte Schaltungen aufweisenden Halbleiterscheibe |
IT1089299B (it) | 1977-01-26 | 1985-06-18 | Mostek Corp | Procedimento per fabbricare un dispositivo semiconduttore |
US4183135A (en) * | 1977-08-29 | 1980-01-15 | Motorola, Inc. | Hermetic glass encapsulation for semiconductor die and method |
JPS5492175A (en) * | 1977-12-29 | 1979-07-21 | Fujitsu Ltd | Manufacture of semiconductor device |
US4214917A (en) * | 1978-02-10 | 1980-07-29 | Emm Semi | Process of forming a semiconductor memory cell with continuous polysilicon run circuit elements |
US4191603A (en) * | 1978-05-01 | 1980-03-04 | International Business Machines Corporation | Making semiconductor structure with improved phosphosilicate glass isolation |
US4251571A (en) * | 1978-05-02 | 1981-02-17 | International Business Machines Corporation | Method for forming semiconductor structure with improved isolation between two layers of polycrystalline silicon |
JPS54147789A (en) * | 1978-05-11 | 1979-11-19 | Matsushita Electric Ind Co Ltd | Semiconductor divice and its manufacture |
US4668973A (en) * | 1978-06-19 | 1987-05-26 | Rca Corporation | Semiconductor device passivated with phosphosilicate glass over silicon nitride |
USRE32351E (en) * | 1978-06-19 | 1987-02-17 | Rca Corporation | Method of manufacturing a passivating composite comprising a silicon nitride (SI1 3N4) layer and a phosphosilicate glass (PSG) layer for a semiconductor device layer |
JPS5534444A (en) * | 1978-08-31 | 1980-03-11 | Fujitsu Ltd | Preparation of semiconductor device |
US4206254A (en) * | 1979-02-28 | 1980-06-03 | International Business Machines Corporation | Method of selectively depositing metal on a ceramic substrate with a metallurgy pattern |
US4355454A (en) * | 1979-09-05 | 1982-10-26 | Texas Instruments Incorporated | Coating device with As2 -O3 -SiO2 |
DE2937993A1 (de) * | 1979-09-20 | 1981-04-02 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von integrierten mos-halbleiterschaltungen nach der silizium-gate-technologie |
JPS5669835A (en) * | 1979-11-09 | 1981-06-11 | Japan Electronic Ind Dev Assoc<Jeida> | Method for forming thin film pattern |
CA1174285A (en) * | 1980-04-28 | 1984-09-11 | Michelangelo Delfino | Laser induced flow of integrated circuit structure materials |
US4542037A (en) * | 1980-04-28 | 1985-09-17 | Fairchild Camera And Instrument Corporation | Laser induced flow of glass bonded materials |
US4284659A (en) * | 1980-05-12 | 1981-08-18 | Bell Telephone Laboratories | Insulation layer reflow |
JPS57126147A (en) * | 1981-01-28 | 1982-08-05 | Fujitsu Ltd | Manufacture of semiconductor device |
US4455325A (en) * | 1981-03-16 | 1984-06-19 | Fairchild Camera And Instrument Corporation | Method of inducing flow or densification of phosphosilicate glass for integrated circuits |
US4492717A (en) * | 1981-07-27 | 1985-01-08 | International Business Machines Corporation | Method for forming a planarized integrated circuit |
DE3130666A1 (de) * | 1981-08-03 | 1983-02-17 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen integrieter mos-feldeffekttransistoren mit einer phosphorsilikatglasschicht als zwischenoxidschicht |
DE3131050A1 (de) * | 1981-08-05 | 1983-02-24 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von integrierten mos-feldeffekttransistoren unter verwendung einer aus phosphorsilikatglas bestehenden obewrflaechenschicht auf dem zwischenoxid zwischen polysiliziumebene und metall-leiterbahnebene |
DE3133516A1 (de) * | 1981-08-25 | 1983-03-17 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum verrunden des zwischenoxids zwischen polysiliziumebene und metall-leiterbahnebene beim herstellen von integrierten n-kanal-mos-feldeffekttransistoren |
JPS58101442A (ja) * | 1981-12-11 | 1983-06-16 | Hitachi Ltd | 電気的装置用基板 |
US4476621A (en) * | 1983-02-01 | 1984-10-16 | Gte Communications Products Corporation | Process for making transistors with doped oxide densification |
US4496608A (en) * | 1984-03-02 | 1985-01-29 | Xerox Corporation | P-Glass reflow technique |
US4663414A (en) * | 1985-05-14 | 1987-05-05 | Stauffer Chemical Company | Phospho-boro-silanol interlayer dielectric films and preparation |
EP0280276B1 (en) * | 1987-02-27 | 1993-05-19 | Kabushiki Kaisha Toshiba | Ultraviolet erasable nonvolatile semiconductor memory device and manufacturing method therefor |
US4784973A (en) * | 1987-08-24 | 1988-11-15 | Inmos Corporation | Semiconductor contact silicide/nitride process with control for silicide thickness |
US4948743A (en) * | 1988-06-29 | 1990-08-14 | Matsushita Electronics Corporation | Method of manufacturing a semiconductor device |
EP0388075B1 (en) * | 1989-03-16 | 1996-11-06 | STMicroelectronics, Inc. | Contacts for semiconductor devices |
JP2556138B2 (ja) * | 1989-06-30 | 1996-11-20 | 日本電気株式会社 | 半導体装置の製造方法 |
JP3128811B2 (ja) * | 1990-08-07 | 2001-01-29 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
ATE208536T1 (de) * | 1994-03-03 | 2001-11-15 | Rohm Corp | Überlöschungsdetektion in einer niederspannungs- eintransistor-flash-eeprom-zelle unter verwendung von fowler-nordheim-programmierung und -löschung |
US5419787A (en) * | 1994-06-24 | 1995-05-30 | The United States Of America As Represented By The Secretary Of The Air Force | Stress reduced insulator |
US5738931A (en) * | 1994-09-16 | 1998-04-14 | Kabushiki Kaisha Toshiba | Electronic device and magnetic device |
US6087733A (en) * | 1998-06-12 | 2000-07-11 | Intel Corporation | Sacrificial erosion control features for chemical-mechanical polishing process |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3383568A (en) * | 1965-02-04 | 1968-05-14 | Texas Instruments Inc | Semiconductor device utilizing glass and oxides as an insulator for hermetically sealing the junctions |
US3475234A (en) * | 1967-03-27 | 1969-10-28 | Bell Telephone Labor Inc | Method for making mis structures |
US3615941A (en) * | 1968-05-07 | 1971-10-26 | Hitachi Ltd | Method for manufacturing semiconductor device with passivation film |
-
1970
- 1970-08-13 DE DE19702040180 patent/DE2040180B2/de not_active Withdrawn
- 1970-08-14 GB GB3933570A patent/GB1326947A/en not_active Expired
- 1970-08-24 FR FR7030952A patent/FR2077260B1/fr not_active Expired
- 1970-09-23 NL NL707014024A patent/NL151560B/nl unknown
-
1972
- 1972-09-27 US US00292510A patent/US3825442A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE2040180A1 (de) | 1971-07-29 |
FR2077260B1 (nl) | 1976-07-23 |
FR2077260A1 (nl) | 1971-10-22 |
GB1326947A (en) | 1973-08-15 |
DE2040180B2 (de) | 1977-08-25 |
US3825442A (en) | 1974-07-23 |
NL151560B (nl) | 1976-11-15 |