NL7010204A - - Google Patents

Info

Publication number
NL7010204A
NL7010204A NL7010204A NL7010204A NL7010204A NL 7010204 A NL7010204 A NL 7010204A NL 7010204 A NL7010204 A NL 7010204A NL 7010204 A NL7010204 A NL 7010204A NL 7010204 A NL7010204 A NL 7010204A
Authority
NL
Netherlands
Application number
NL7010204A
Other versions
NL170902B (nl
NL170902C (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NLAANVRAGE7010204,A priority Critical patent/NL170902C/xx
Application filed filed Critical
Priority to SE08804/71A priority patent/SE368479B/xx
Priority to CH1001371A priority patent/CH542517A/de
Priority to GB3184471A priority patent/GB1360243A/en
Priority to CA117580A priority patent/CA926029A/en
Priority to GB1028374A priority patent/GB1364677A/en
Priority to CH1000771A priority patent/CH533364A/de
Priority to SE08805/71A priority patent/SE368480B/xx
Priority to GB3183971A priority patent/GB1364676A/en
Priority to CA117,581A priority patent/CA1102012A/en
Priority to CH1000871A priority patent/CH535496A/de
Priority to GB3184571A priority patent/GB1353997A/en
Priority to DE2133982A priority patent/DE2133982C2/de
Priority to ES393040A priority patent/ES393040A1/es
Priority to AT594371A priority patent/AT351596B/de
Priority to DE2133976A priority patent/DE2133976C3/de
Priority to BE769734A priority patent/BE769734A/xx
Priority to DE19712133981 priority patent/DE2133981C3/de
Priority to BE769729A priority patent/BE769729A/xx
Priority to BE769735A priority patent/BE769735A/xx
Priority to ES393035A priority patent/ES393035A1/es
Priority to ES393041A priority patent/ES393041A1/es
Priority to FR7125298A priority patent/FR2098324B1/fr
Priority to FR7125293A priority patent/FR2098319B1/fr
Priority to FR7125299A priority patent/FR2098325B1/fr
Priority to JP46050730A priority patent/JPS4945629B1/ja
Priority to JP46050732A priority patent/JPS5010101B1/ja
Priority to JP46050731A priority patent/JPS517550B1/ja
Priority to BR4395/71A priority patent/BR7104395D0/pt
Publication of NL7010204A publication Critical patent/NL7010204A/xx
Priority to HK593/72*UA priority patent/HK59376A/xx
Priority to HK590/76*UA priority patent/HK59076A/xx
Priority to HK594/76*UA priority patent/HK59476A/xx
Priority to HK585/76*UA priority patent/HK58576A/xx
Publication of NL170902B publication Critical patent/NL170902B/xx
Application granted granted Critical
Publication of NL170902C publication Critical patent/NL170902C/xx
Priority to US07/021,563 priority patent/US4903109A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0121—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] in regions recessed from the surface, e.g. in trenches or grooves
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0125—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics
    • H10W10/0126—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics introducing electrical active impurities in local oxidation regions to create channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H10W15/01—Manufacture or treatment
NLAANVRAGE7010204,A 1970-07-10 1970-07-10 Halfgeleiderinrichting, in het bijzonder monolithische geintegreerde halfgeleiderschakeling. NL170902C (nl)

Priority Applications (34)

Application Number Priority Date Filing Date Title
NLAANVRAGE7010204,A NL170902C (nl) 1970-07-10 1970-07-10 Halfgeleiderinrichting, in het bijzonder monolithische geintegreerde halfgeleiderschakeling.
CH1001371A CH542517A (de) 1970-07-10 1971-07-07 Halbleitervorrichtung mit einem Transistor und Verfahren zur Herstellung der Halbleitervorrichtung
GB3184471A GB1360243A (en) 1970-07-10 1971-07-07 Semiconductor devices
CA117580A CA926029A (en) 1970-07-10 1971-07-07 Semiconductor device having a transistor
SE08804/71A SE368479B (https=) 1970-07-10 1971-07-07
CH1000771A CH533364A (de) 1970-07-10 1971-07-07 Monolitische, intergrierte Schaltung
SE08805/71A SE368480B (https=) 1970-07-10 1971-07-07
GB3183971A GB1364676A (en) 1970-07-10 1971-07-07 Semiconductor integrated device
CA117,581A CA1102012A (en) 1970-07-10 1971-07-07 Semiconductor device, in particular integrated monolithic circuit, and method of manufacturing same
CH1000871A CH535496A (de) 1970-07-10 1971-07-07 Monolithische, integrierte Schaltung
GB3184571A GB1353997A (en) 1970-07-10 1971-07-07 Semiconductor integrated devices
GB1028374A GB1364677A (en) 1970-07-10 1971-07-07 Semiconductor devices and methods of making semiconductor devices
DE19712133981 DE2133981C3 (de) 1970-07-10 1971-07-08 Halbleiterbauelement mit einem Halbleiterkörper mit einem Transistor und Verfahren zu seiner Herstellung
AT594371A AT351596B (de) 1970-07-10 1971-07-08 Halbleiteranordnung, insbesondere monolithische integrierte schaltung mit von zum teil durch eine versenkte isolierschicht gebildete isolierzonen umgebenen inseln
DE2133976A DE2133976C3 (de) 1970-07-10 1971-07-08 Monolithisch integrierte Halbleiteranordnung
BE769734A BE769734A (fr) 1970-07-10 1971-07-08 Dispositif semiconducteur comportant un transistor
DE2133982A DE2133982C2 (de) 1970-07-10 1971-07-08 Integriertes Halbleiterbauelement mit einer von einer vergrabenen Schicht gebildeten leitenden Verbindung
BE769729A BE769729A (fr) 1970-07-10 1971-07-08 Dispositif semiconducteur, en particulier un circuit integre monolithique et procede de fabrication de ce dispositif
BE769735A BE769735A (fr) 1970-07-10 1971-07-08 Dispositif semiconducteur, en particulier circuit monolithique integre,et procede de fabrication de ce dispositif
ES393035A ES393035A1 (es) 1970-07-10 1971-07-08 Un dispositivo semiconductor.
ES393041A ES393041A1 (es) 1970-07-10 1971-07-08 Un dispositivo semiconductor.
ES393040A ES393040A1 (es) 1970-07-10 1971-07-08 Un dispositivo semiconductor.
FR7125299A FR2098325B1 (https=) 1970-07-10 1971-07-09
FR7125293A FR2098319B1 (https=) 1970-07-10 1971-07-09
FR7125298A FR2098324B1 (https=) 1970-07-10 1971-07-09
JP46050732A JPS5010101B1 (https=) 1970-07-10 1971-07-10
JP46050731A JPS517550B1 (https=) 1970-07-10 1971-07-10
JP46050730A JPS4945629B1 (https=) 1970-07-10 1971-07-10
BR4395/71A BR7104395D0 (pt) 1970-07-10 1971-07-12 Dispositivo semicondutor mais especialmente um circuito integrado monolitico
HK593/72*UA HK59376A (en) 1970-07-10 1976-09-23 Semiconductor integrated device
HK590/76*UA HK59076A (en) 1970-07-10 1976-09-23 Improvements in and relating to semiconductor devices
HK594/76*UA HK59476A (en) 1970-07-10 1976-09-23 Semiconductor devices and methods of making semiconductor devices
HK585/76*UA HK58576A (en) 1970-07-10 1976-09-23 Improvements in and relating to semiconductor integrated devices
US07/021,563 US4903109A (en) 1970-07-10 1987-03-02 Semiconductor devices having local oxide isolation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7010204,A NL170902C (nl) 1970-07-10 1970-07-10 Halfgeleiderinrichting, in het bijzonder monolithische geintegreerde halfgeleiderschakeling.

Publications (3)

Publication Number Publication Date
NL7010204A true NL7010204A (https=) 1972-01-12
NL170902B NL170902B (nl) 1982-08-02
NL170902C NL170902C (nl) 1983-01-03

Family

ID=19810544

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7010204,A NL170902C (nl) 1970-07-10 1970-07-10 Halfgeleiderinrichting, in het bijzonder monolithische geintegreerde halfgeleiderschakeling.

Country Status (11)

Country Link
US (1) US4903109A (https=)
JP (1) JPS4945629B1 (https=)
BE (1) BE769729A (https=)
BR (1) BR7104395D0 (https=)
CH (1) CH535496A (https=)
DE (1) DE2133976C3 (https=)
ES (1) ES393035A1 (https=)
FR (1) FR2098319B1 (https=)
GB (1) GB1364676A (https=)
HK (2) HK59376A (https=)
NL (1) NL170902C (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6093620A (en) * 1971-02-02 2000-07-25 National Semiconductor Corporation Method of fabricating integrated circuits with oxidized isolation

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT979178B (it) * 1972-05-11 1974-09-30 Ibm Resistore per dispositivi a circuito integrato
DE2235865A1 (de) * 1972-07-21 1974-01-31 Licentia Gmbh Halbleiteranordnung aus einer vielzahl von in einem gemeinsamen halbleiterkoerper untergebrachten halbleiterbauelementen
JPS598065B2 (ja) * 1976-01-30 1984-02-22 松下電子工業株式会社 Ｍｏｓ集積回路の製造方法
DE2708639A1 (de) * 1977-02-28 1978-08-31 Siemens Ag Transistoranordnung auf einem halbleiterplaettchen
FR2480036A1 (fr) * 1980-04-04 1981-10-09 Thomson Csf Structure de dispositif a semi-conducteur a anneau de garde et a fonctionnement unipolaire
JPS5931052A (ja) * 1982-08-13 1984-02-18 Hitachi Ltd 半導体集積回路装置の製造方法
US5290396A (en) * 1991-06-06 1994-03-01 Lsi Logic Corporation Trench planarization techniques
US5413966A (en) * 1990-12-20 1995-05-09 Lsi Logic Corporation Shallow trench etch
US5225358A (en) * 1991-06-06 1993-07-06 Lsi Logic Corporation Method of forming late isolation with polishing
US5248625A (en) * 1991-06-06 1993-09-28 Lsi Logic Corporation Techniques for forming isolation structures
US5252503A (en) * 1991-06-06 1993-10-12 Lsi Logic Corporation Techniques for forming isolation structures
KR100335546B1 (ko) * 1994-04-15 2002-10-11 코닌클리케 필립스 일렉트로닉스 엔.브이. 지지바에 기초한 반도체 디바이스 제조 방법
US5783470A (en) * 1995-12-14 1998-07-21 Lsi Logic Corporation Method of making CMOS dynamic random-access memory structures and the like
KR100456691B1 (ko) * 2002-03-05 2004-11-10 삼성전자주식회사 이중격리구조를 갖는 반도체 소자 및 그 제조방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1077851A (en) * 1962-05-28 1967-08-02 Ultra Electronics Ltd Transistors
US3254277A (en) * 1963-02-27 1966-05-31 United Aircraft Corp Integrated circuit with component defining groove
US3386865A (en) * 1965-05-10 1968-06-04 Ibm Process of making planar semiconductor devices isolated by encapsulating oxide filled channels
US3442011A (en) * 1965-06-30 1969-05-06 Texas Instruments Inc Method for isolating individual devices in an integrated circuit monolithic bar
US3615929A (en) * 1965-07-08 1971-10-26 Texas Instruments Inc Method of forming epitaxial region of predetermined thickness and article of manufacture
NL153374B (nl) * 1966-10-05 1977-05-16 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting voorzien van een oxydelaag en halfgeleiderinrichting vervaardigd volgens de werkwijze.
US3481801A (en) * 1966-10-10 1969-12-02 Frances Hugle Isolation technique for integrated circuits
US3534234A (en) * 1966-12-15 1970-10-13 Texas Instruments Inc Modified planar process for making semiconductor devices having ultrafine mesa type geometry
US3653988A (en) * 1968-02-05 1972-04-04 Bell Telephone Labor Inc Method of forming monolithic semiconductor integrated circuit devices
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6093620A (en) * 1971-02-02 2000-07-25 National Semiconductor Corporation Method of fabricating integrated circuits with oxidized isolation

Also Published As

Publication number Publication date
BE769729A (fr) 1972-01-10
ES393035A1 (es) 1973-08-16
JPS4945629B1 (https=) 1974-12-05
NL170902B (nl) 1982-08-02
FR2098319A1 (https=) 1972-03-10
CH535496A (de) 1973-03-31
DE2133976B2 (de) 1979-07-12
BR7104395D0 (pt) 1973-04-05
US4903109A (en) 1990-02-20
DE2133976A1 (de) 1972-01-13
HK59376A (en) 1976-10-01
NL170902C (nl) 1983-01-03
GB1364676A (en) 1974-08-29
HK59476A (en) 1976-10-01
DE2133976C3 (de) 1981-07-23
FR2098319B1 (https=) 1976-05-28

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Legal Events

Date Code Title Description
V4 Discontinued because of reaching the maximum lifetime of a patent