NL6703784A - - Google Patents
Info
- Publication number
- NL6703784A NL6703784A NL6703784A NL6703784A NL6703784A NL 6703784 A NL6703784 A NL 6703784A NL 6703784 A NL6703784 A NL 6703784A NL 6703784 A NL6703784 A NL 6703784A NL 6703784 A NL6703784 A NL 6703784A
- Authority
- NL
- Netherlands
- Prior art keywords
- wafer
- march
- forming
- applying
- channel
- Prior art date
Links
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 abstract 1
- 229910052786 argon Inorganic materials 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 238000010791 quenching Methods 0.000 abstract 1
- 230000000171 quenching effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052723 transition metal Inorganic materials 0.000 abstract 1
- 150000003624 transition metals Chemical class 0.000 abstract 1
- 229910001935 vanadium oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thermistors And Varistors (AREA)
Abstract
1,147,557. Semi-conductor switches. DANFOSS A.S. 7 March, 1967 [19 March, 1966], No. 10671/67. Heading H1K. A symmetrical switch which changes from a high to a low resistance condition when the applied voltage exceeds a threshold value and reverts when the current falls below a holding value, is made of a polycrystalline material exhibiting a discontinuity in its resistivitytemperature characteristic. Suitable materials are the lower oxides of transition metals, particularly vanadium oxide VO 2 and titanium oxide Ti 2 O 3 . The preferred device is made by forming a wafer of high-ohmic vanadium pentoxide by cathode sputtering in argon containing a little oxygen or by melting and quenching, applying electrodes to the opposed faces of the wafer and applying a forming voltage between them to convert a thin channel through the wafer to the form VO 2 . Preferably the channel has a length of <100Á and a diameter <10Á.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1966D0049648 DE1278626C2 (en) | 1966-03-19 | 1966-03-19 | ELECTRICAL SWITCHING ELEMENT AND PROCESS FOR ITS MANUFACTURING |
Publications (1)
Publication Number | Publication Date |
---|---|
NL6703784A true NL6703784A (en) | 1967-09-20 |
Family
ID=7052045
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL6703784A NL6703784A (en) | 1966-03-19 | 1967-03-13 |
Country Status (8)
Country | Link |
---|---|
AT (1) | AT269998B (en) |
BE (1) | BE695237A (en) |
DE (1) | DE1278626C2 (en) |
DK (1) | DK130440B (en) |
FR (1) | FR1515426A (en) |
GB (1) | GB1147557A (en) |
NL (1) | NL6703784A (en) |
SE (1) | SE337635B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2509530A1 (en) * | 1981-07-10 | 1983-01-14 | Centre Nat Rech Scient | Switching device - using semiconductor layer of vanadium pent:oxide deposited at ambient temp. |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE624465A (en) * | 1961-11-06 |
-
1966
- 1966-03-19 DE DE1966D0049648 patent/DE1278626C2/en not_active Expired
-
1967
- 1967-02-24 AT AT187667A patent/AT269998B/en active
- 1967-03-07 GB GB10671/67A patent/GB1147557A/en not_active Expired
- 1967-03-09 BE BE695237D patent/BE695237A/xx unknown
- 1967-03-13 NL NL6703784A patent/NL6703784A/xx unknown
- 1967-03-17 SE SE03760/67A patent/SE337635B/xx unknown
- 1967-03-17 FR FR99317A patent/FR1515426A/en not_active Expired
- 1967-03-20 DK DK143867AA patent/DK130440B/en unknown
Also Published As
Publication number | Publication date |
---|---|
GB1147557A (en) | 1969-04-02 |
DE1278626B (en) | 1968-09-26 |
DK130440B (en) | 1975-02-17 |
SE337635B (en) | 1971-08-16 |
DK130440C (en) | 1975-07-21 |
BE695237A (en) | 1967-08-14 |
FR1515426A (en) | 1968-03-01 |
AT269998B (en) | 1969-04-10 |
DE1278626C2 (en) | 1976-11-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2334201A1 (en) | Non reversible semiconductor switching element - consists of resistance of polycrystalline silicon with high specific resistance | |
IE812693L (en) | Gate enhanced rectifier | |
GB1288090A (en) | ||
GB1307598A (en) | Ceramic compositions | |
SE337635B (en) | ||
US3588638A (en) | Current controlling device including v02 | |
GB1413431A (en) | Solid-state switching systems | |
GB1416644A (en) | Electrical device incorporating a film of a n | |
GB1260192A (en) | Improvements in or relating to current controlling devices | |
GB1138275A (en) | Solid state switching device | |
GB1253700A (en) | Improvements in or relating to electric current controlling devices | |
GB1060505A (en) | Improvements in or relating to semiconductor devices | |
GB983159A (en) | Cathode for gas discharge tubes | |
GB1070411A (en) | Improvements in or relating to symmetrical current controlling devices | |
GB1324417A (en) | Process of switching electrical current | |
GB1031452A (en) | Overload protection clrcuit | |
GB1145075A (en) | Semiconductor device | |
GB1286115A (en) | Improvements in or relating to current controlling devices | |
GB1100834A (en) | Electric switching circuit | |
GB1260191A (en) | Improvements in or relating to current controlling devices | |
GB1101569A (en) | Semiconductor switching element | |
GB1158392A (en) | Improvements in Superconducting Materials | |
GB1329943A (en) | Surge voltage diverters | |
GB1457749A (en) | Varistor | |
NL7512533A (en) | Non-linear zinc oxide resistor - contg small amounts of oxides of bismuth, cobalt, manganese and another metal |