GB1324417A - Process of switching electrical current - Google Patents
Process of switching electrical currentInfo
- Publication number
- GB1324417A GB1324417A GB4014670A GB4014670A GB1324417A GB 1324417 A GB1324417 A GB 1324417A GB 4014670 A GB4014670 A GB 4014670A GB 4014670 A GB4014670 A GB 4014670A GB 1324417 A GB1324417 A GB 1324417A
- Authority
- GB
- United Kingdom
- Prior art keywords
- resistance state
- voltage
- current
- low resistance
- reduction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002245 particle Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229920003002 synthetic resin Polymers 0.000 abstract 1
- 239000000057 synthetic resin Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
- G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/24—Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon or silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Conductive Materials (AREA)
- Adjustable Resistors (AREA)
- Thermistors And Varistors (AREA)
- Inks, Pencil-Leads, Or Crayons (AREA)
Abstract
1324417 Semi-conductor devices MATSUSHITA ELECTRIC INDUSTRIAL CO Ltd 20 Aug 1970 [21 Aug 1969] 40146/70 Heading H1K A current switching element comprises a disc body composed of finely divided conductive particles disposed in a synthetic resin (Fig. 4, not shown), with electrodes disposed on opposite or on the same sides (Figs. 1, 2, not shown), having a high and a low resistance state, wherein increasing voltage is applied to the device in its high resistance state (Fig. 3) and current increases ohmically until a critical value is reached. The device then changes over to a low resistance state and current again increases ohmically with voltage. Reduction of voltage to point 21 causes changeover to the high resistance state and further reduction of voltage produces ohmic reduction of current to zero. The cycle may be repeated, and the device may receive a bias less than the first and greater than the second critical voltage so that a pulse of amplitude exceeding the first critical voltage initiates rapid changeover to the low resistance state until a similar negative pulse produces restoration of the high resistance state. The composition of the element is similar to that of Specification 1,324,416.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP44066982A JPS492950B1 (en) | 1969-08-21 | 1969-08-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1324417A true GB1324417A (en) | 1973-07-25 |
Family
ID=13331720
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4014670A Expired GB1324417A (en) | 1969-08-21 | 1970-08-20 | Process of switching electrical current |
GB4014570A Expired GB1324416A (en) | 1969-08-21 | 1970-08-20 | Electric memory or storage device |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4014570A Expired GB1324416A (en) | 1969-08-21 | 1970-08-20 | Electric memory or storage device |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS492950B1 (en) |
DE (2) | DE2042099C3 (en) |
FR (2) | FR2058109A5 (en) |
GB (2) | GB1324417A (en) |
NL (2) | NL151539B (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE795843A (en) * | 1972-02-25 | 1973-08-23 | Storry Smithson & Co Ltd | IMPROVEMENTS RELATING TO A CATHODIC PROTECTION SYSTEM |
CH557081A (en) * | 1972-12-22 | 1974-12-13 | Ibm | BISTABLE RESISTANCE WITH CONDITIONS INDEPENDENT OF THE EXTERNAL ENERGY SUPPLY. |
DE3245589A1 (en) * | 1982-12-09 | 1984-06-14 | Hoechst Ag, 6230 Frankfurt | UNCROSSLINKABLE, ELECTRICALLY CONDUCTIVE MOLDING MATERIALS BASED ON THERMOPLASTIC PLASTICS AND CARBON |
US4977357A (en) * | 1988-01-11 | 1990-12-11 | Shrier Karen P | Overvoltage protection device and material |
US4992333A (en) * | 1988-11-18 | 1991-02-12 | G&H Technology, Inc. | Electrical overstress pulse protection |
CN1636163A (en) * | 2001-06-20 | 2005-07-06 | 赛特勒有限公司 | Thin planar switches and their applications |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3359521A (en) * | 1965-10-26 | 1967-12-19 | Cognitronics Corp | Bistable resistance memory device |
-
1969
- 1969-08-21 JP JP44066982A patent/JPS492950B1/ja active Pending
-
1970
- 1970-08-14 FR FR7030053A patent/FR2058109A5/fr not_active Expired
- 1970-08-14 FR FR707030054A patent/FR2063139B1/fr not_active Expired
- 1970-08-19 DE DE2042099A patent/DE2042099C3/en not_active Expired
- 1970-08-20 GB GB4014670A patent/GB1324417A/en not_active Expired
- 1970-08-20 GB GB4014570A patent/GB1324416A/en not_active Expired
- 1970-08-20 DE DE2042111A patent/DE2042111C3/en not_active Expired
- 1970-08-21 NL NL707012436A patent/NL151539B/en unknown
- 1970-08-21 NL NL707012435A patent/NL151538B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
NL7012435A (en) | 1971-02-23 |
FR2063139A1 (en) | 1971-07-09 |
DE2042111B2 (en) | 1972-07-20 |
NL151539B (en) | 1976-11-15 |
NL151538B (en) | 1976-11-15 |
DE2042111A1 (en) | 1971-04-22 |
FR2058109A5 (en) | 1971-05-21 |
DE2042099C3 (en) | 1975-01-02 |
DE2042111C3 (en) | 1975-05-22 |
DE2042099B2 (en) | 1974-05-22 |
DE2042099A1 (en) | 1971-05-13 |
FR2063139B1 (en) | 1974-06-14 |
JPS492950B1 (en) | 1974-01-23 |
GB1324416A (en) | 1973-07-25 |
NL7012436A (en) | 1971-02-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |