GB1324416A - Electric memory or storage device - Google Patents
Electric memory or storage deviceInfo
- Publication number
- GB1324416A GB1324416A GB4014570A GB4014570A GB1324416A GB 1324416 A GB1324416 A GB 1324416A GB 4014570 A GB4014570 A GB 4014570A GB 4014570 A GB4014570 A GB 4014570A GB 1324416 A GB1324416 A GB 1324416A
- Authority
- GB
- United Kingdom
- Prior art keywords
- resin
- chlorinated
- voltage
- current
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229920005989 resin Polymers 0.000 abstract 8
- 239000011347 resin Substances 0.000 abstract 8
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract 3
- 229910052801 chlorine Inorganic materials 0.000 abstract 3
- 239000000460 chlorine Substances 0.000 abstract 3
- 239000002245 particle Substances 0.000 abstract 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 abstract 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 abstract 2
- 229910052794 bromium Inorganic materials 0.000 abstract 2
- 125000001246 bromo group Chemical group Br* 0.000 abstract 2
- 239000003822 epoxy resin Substances 0.000 abstract 2
- 239000003973 paint Substances 0.000 abstract 2
- 229920000647 polyepoxide Polymers 0.000 abstract 2
- -1 polyethylene Polymers 0.000 abstract 2
- 239000002904 solvent Substances 0.000 abstract 2
- 229920002554 vinyl polymer Polymers 0.000 abstract 2
- HGRZLIGHKHRTRE-UHFFFAOYSA-N 1,2,3,4-tetrabromobutane Chemical class BrCC(Br)C(Br)CBr HGRZLIGHKHRTRE-UHFFFAOYSA-N 0.000 abstract 1
- FHCLGDLYRUPKAM-UHFFFAOYSA-N 1,2,3-tribromopropane Chemical class BrCC(Br)CBr FHCLGDLYRUPKAM-UHFFFAOYSA-N 0.000 abstract 1
- WBEJYOJJBDISQU-UHFFFAOYSA-N 1,2-Dibromo-3-chloropropane Chemical class ClCC(Br)CBr WBEJYOJJBDISQU-UHFFFAOYSA-N 0.000 abstract 1
- WJUKOGPNGRUXMG-UHFFFAOYSA-N 1,2-dibromo-1,1,2,2-tetrachloroethane Chemical class ClC(Cl)(Br)C(Cl)(Cl)Br WJUKOGPNGRUXMG-UHFFFAOYSA-N 0.000 abstract 1
- KTZVZZJJVJQZHV-UHFFFAOYSA-N 1-chloro-4-ethenylbenzene Chemical compound ClC1=CC=C(C=C)C=C1 KTZVZZJJVJQZHV-UHFFFAOYSA-N 0.000 abstract 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 239000004709 Chlorinated polyethylene Substances 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 244000043261 Hevea brasiliensis Species 0.000 abstract 1
- 229930182556 Polyacetal Natural products 0.000 abstract 1
- 239000004952 Polyamide Substances 0.000 abstract 1
- 239000004698 Polyethylene Substances 0.000 abstract 1
- 239000004721 Polyphenylene oxide Substances 0.000 abstract 1
- 239000004743 Polypropylene Substances 0.000 abstract 1
- 239000004793 Polystyrene Substances 0.000 abstract 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- 229920000180 alkyd Polymers 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 150000001408 amides Chemical class 0.000 abstract 1
- 150000001412 amines Chemical class 0.000 abstract 1
- 239000006229 carbon black Substances 0.000 abstract 1
- 125000001309 chloro group Chemical group Cl* 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 150000002191 fatty alcohols Chemical class 0.000 abstract 1
- 150000002194 fatty esters Chemical class 0.000 abstract 1
- SLGWESQGEUXWJQ-UHFFFAOYSA-N formaldehyde;phenol Chemical compound O=C.OC1=CC=CC=C1 SLGWESQGEUXWJQ-UHFFFAOYSA-N 0.000 abstract 1
- 230000009477 glass transition Effects 0.000 abstract 1
- 239000010439 graphite Substances 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 abstract 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- GVYLCNUFSHDAAW-UHFFFAOYSA-N mirex Chemical class ClC12C(Cl)(Cl)C3(Cl)C4(Cl)C1(Cl)C1(Cl)C2(Cl)C3(Cl)C4(Cl)C1(Cl)Cl GVYLCNUFSHDAAW-UHFFFAOYSA-N 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229920003052 natural elastomer Polymers 0.000 abstract 1
- 229920001194 natural rubber Polymers 0.000 abstract 1
- 229920001568 phenolic resin Polymers 0.000 abstract 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 abstract 1
- 229920002647 polyamide Polymers 0.000 abstract 1
- 229920000515 polycarbonate Polymers 0.000 abstract 1
- 239000004417 polycarbonate Substances 0.000 abstract 1
- 229920000728 polyester Polymers 0.000 abstract 1
- 229920000573 polyethylene Polymers 0.000 abstract 1
- 239000004926 polymethyl methacrylate Substances 0.000 abstract 1
- 229920000098 polyolefin Polymers 0.000 abstract 1
- 229920006324 polyoxymethylene Polymers 0.000 abstract 1
- 229920006380 polyphenylene oxide Polymers 0.000 abstract 1
- 229920001155 polypropylene Polymers 0.000 abstract 1
- 229920002223 polystyrene Polymers 0.000 abstract 1
- 229920001021 polysulfide Polymers 0.000 abstract 1
- 229920000915 polyvinyl chloride Polymers 0.000 abstract 1
- 239000004800 polyvinyl chloride Substances 0.000 abstract 1
- 239000005033 polyvinylidene chloride Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229920002050 silicone resin Polymers 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- 239000000243 solution Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- HQUQLFOMPYWACS-UHFFFAOYSA-N tris(2-chloroethyl) phosphate Chemical class ClCCOP(=O)(OCCCl)OCCCl HQUQLFOMPYWACS-UHFFFAOYSA-N 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
- G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/24—Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon or silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Nanotechnology (AREA)
- Mathematical Physics (AREA)
- Electromagnetism (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Conductive Materials (AREA)
- Adjustable Resistors (AREA)
- Inks, Pencil-Leads, Or Crayons (AREA)
- Thermistors And Varistors (AREA)
Abstract
1324416 Semi-conductor devices MATSUSHITA ELECTRIC INDUSTRIAL CO Ltd 20 Aug 1970 [21 Aug 1969] 40145/70 Heading H1K An electric memory or storage device comprises a disc body of resin having electrodes on opposite or the same surface (Figs. 1, 2, not shown) comprising finely divided conductive particles dispersed in the resin. On application of increasing voltage to the electrodes the device exhibits high resistance and current increases ohmically to point 30 (Fig. 3) and further voltage increase shifts the working point to 40 from which current again increases ohmically, and the device exhibits low resistance until voltage reaches point 50, after which further increase in voltage shifts the working point to 60 on a further ohmic characteristic, along which voltage and current may be reduced to zero; the device remaining in this "memory" state for successive cycles of increasing and decreasing voltage and current until restored to its high resistance state by heating to a temperature exceeding the glass transition temperature of the resin. The device is responsive to pulse voltages, and the resin contains chlorine or bromine atoms. Preferred mixtures are: polyethylene, polystyrene, polymethyl methacrylate, polyacetal, polycarbonate, polyamide, polyester, phenol formaldehyde, epoxy resin silicone resin, alkyd resin, polysulphide resin, polyphenylene oxide resin, admixed with low M.W. chloro or bromo compounds such as chlorinated paraffins, chlorinated fatty esters, chlorinated fatty alcohols, chlorinated fatty amines, chlorinated amides, 1,2,3-tribromopropane, 1,2-dibromochloropropane, 1,2,3,4-tetrabromobutane, 1,2- dibromo - 1,1,2,2 - tetrachloroethane, tris - (2- chloroethyl) phosphate, perchloro-pentacyclodecane. Alternatively, the resin may be a chlorine or bromine containing vinyl polymer such as polyvinyl chloride, polyvinylidene chloride, polyvinyl bromide, poly-p-chlorostyrene, or a chloro-substituted polyolefine such as chlorinated polyethylene, chlorinated polypropylene; or chlorine or bromine containing epoxy resins; or chlorinated natural rubber; and the finely divided particles may be of silver, iron, copper, carbon black, or graphite. The body is formed by solution of resin in a suitable medium, introduction of the finely divided particles, mixing in a ball mill to a paint applied to an electrode substrate, evaporation of solvent, and imposition of a further electrode by vacuum deposition of e.g. aluminium, or by conductive ink. Alternatively the solvent is heat evaporated from the paint to form a film on which electrodes are similarly imposed. Specification 1,324,417 is referred to.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP44066982A JPS492950B1 (en) | 1969-08-21 | 1969-08-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1324416A true GB1324416A (en) | 1973-07-25 |
Family
ID=13331720
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4014670A Expired GB1324417A (en) | 1969-08-21 | 1970-08-20 | Process of switching electrical current |
| GB4014570A Expired GB1324416A (en) | 1969-08-21 | 1970-08-20 | Electric memory or storage device |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4014670A Expired GB1324417A (en) | 1969-08-21 | 1970-08-20 | Process of switching electrical current |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS492950B1 (en) |
| DE (2) | DE2042099C3 (en) |
| FR (2) | FR2063139B1 (en) |
| GB (2) | GB1324417A (en) |
| NL (2) | NL151539B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0362308A1 (en) * | 1988-01-11 | 1990-04-11 | Electromer Corporation | Overvoltage protection device and material |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE795843A (en) * | 1972-02-25 | 1973-08-23 | Storry Smithson & Co Ltd | IMPROVEMENTS RELATING TO A CATHODIC PROTECTION SYSTEM |
| CH557081A (en) * | 1972-12-22 | 1974-12-13 | Ibm | BISTABLE RESISTANCE WITH CONDITIONS INDEPENDENT OF THE EXTERNAL ENERGY SUPPLY. |
| DE3245589A1 (en) * | 1982-12-09 | 1984-06-14 | Hoechst Ag, 6230 Frankfurt | UNCROSSLINKABLE, ELECTRICALLY CONDUCTIVE MOLDING MATERIALS BASED ON THERMOPLASTIC PLASTICS AND CARBON |
| US4992333A (en) * | 1988-11-18 | 1991-02-12 | G&H Technology, Inc. | Electrical overstress pulse protection |
| JP2005516378A (en) * | 2001-06-20 | 2005-06-02 | シタラ リミティド | Thin planar switch and its application |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3359521A (en) * | 1965-10-26 | 1967-12-19 | Cognitronics Corp | Bistable resistance memory device |
-
1969
- 1969-08-21 JP JP44066982A patent/JPS492950B1/ja active Pending
-
1970
- 1970-08-14 FR FR707030054A patent/FR2063139B1/fr not_active Expired
- 1970-08-14 FR FR7030053A patent/FR2058109A5/fr not_active Expired
- 1970-08-19 DE DE2042099A patent/DE2042099C3/en not_active Expired
- 1970-08-20 GB GB4014670A patent/GB1324417A/en not_active Expired
- 1970-08-20 GB GB4014570A patent/GB1324416A/en not_active Expired
- 1970-08-20 DE DE2042111A patent/DE2042111C3/en not_active Expired
- 1970-08-21 NL NL707012436A patent/NL151539B/en unknown
- 1970-08-21 NL NL707012435A patent/NL151538B/en not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0362308A1 (en) * | 1988-01-11 | 1990-04-11 | Electromer Corporation | Overvoltage protection device and material |
| EP0362308A4 (en) * | 1988-01-11 | 1991-09-04 | Karen P. Shrier | Overvoltage protection device and material |
Also Published As
| Publication number | Publication date |
|---|---|
| NL151538B (en) | 1976-11-15 |
| NL7012435A (en) | 1971-02-23 |
| DE2042111A1 (en) | 1971-04-22 |
| FR2063139A1 (en) | 1971-07-09 |
| NL151539B (en) | 1976-11-15 |
| DE2042099A1 (en) | 1971-05-13 |
| FR2058109A5 (en) | 1971-05-21 |
| FR2063139B1 (en) | 1974-06-14 |
| DE2042111B2 (en) | 1972-07-20 |
| NL7012436A (en) | 1971-02-23 |
| JPS492950B1 (en) | 1974-01-23 |
| DE2042111C3 (en) | 1975-05-22 |
| GB1324417A (en) | 1973-07-25 |
| DE2042099C3 (en) | 1975-01-02 |
| DE2042099B2 (en) | 1974-05-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| 746 | Register noted 'licences of right' (sect. 46/1977) | ||
| PE20 | Patent expired after termination of 20 years |