GB1070411A - Improvements in or relating to symmetrical current controlling devices - Google Patents
Improvements in or relating to symmetrical current controlling devicesInfo
- Publication number
- GB1070411A GB1070411A GB37137/63A GB3713763A GB1070411A GB 1070411 A GB1070411 A GB 1070411A GB 37137/63 A GB37137/63 A GB 37137/63A GB 3713763 A GB3713763 A GB 3713763A GB 1070411 A GB1070411 A GB 1070411A
- Authority
- GB
- United Kingdom
- Prior art keywords
- tellurium
- devices
- germanium
- current
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 8
- 239000000463 material Substances 0.000 abstract 8
- 229910052714 tellurium Inorganic materials 0.000 abstract 6
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 4
- 230000000903 blocking effect Effects 0.000 abstract 4
- 229910052732 germanium Inorganic materials 0.000 abstract 4
- 229910052742 iron Inorganic materials 0.000 abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 4
- 239000004411 aluminium Substances 0.000 abstract 3
- 229910052782 aluminium Inorganic materials 0.000 abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 3
- 239000000203 mixture Substances 0.000 abstract 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 abstract 2
- 229910052787 antimony Inorganic materials 0.000 abstract 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 2
- 229910052785 arsenic Inorganic materials 0.000 abstract 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 2
- 229910052792 caesium Inorganic materials 0.000 abstract 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 abstract 2
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 abstract 2
- 238000000227 grinding Methods 0.000 abstract 2
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 abstract 2
- 229910052759 nickel Inorganic materials 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract 1
- 239000005864 Sulphur Substances 0.000 abstract 1
- HTRSGQGJZWBDSW-UHFFFAOYSA-N [Ge].[Se] Chemical compound [Ge].[Se] HTRSGQGJZWBDSW-UHFFFAOYSA-N 0.000 abstract 1
- 238000007792 addition Methods 0.000 abstract 1
- 239000000654 additive Substances 0.000 abstract 1
- 239000003513 alkali Substances 0.000 abstract 1
- 150000001342 alkaline earth metals Chemical class 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 238000005266 casting Methods 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 229910052801 chlorine Inorganic materials 0.000 abstract 1
- 239000000460 chlorine Substances 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 238000005323 electroforming Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract 1
- 239000006249 magnetic particle Substances 0.000 abstract 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 229910052711 selenium Inorganic materials 0.000 abstract 1
- 239000011669 selenium Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 150000004763 sulfides Chemical class 0.000 abstract 1
- 238000011282 treatment Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/70—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices having only two electrodes and exhibiting negative resistance
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/253—Multistable switching devices, e.g. memristors having three or more electrodes, e.g. transistor-like devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8822—Sulfides, e.g. CuS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Control Of Resistance Heating (AREA)
- Thyristors (AREA)
- Control Of Electrical Variables (AREA)
- Thermistors And Varistors (AREA)
- Contacts (AREA)
- Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
1,070,411. Semi-conductor switches. ENERGY CONVERSION DEVICES INCORPORATED. Sept. 20, 1963 [Sept. 28, 1962; Jan. 18, 1963 (3); June 17, 1963], No. 37137/63. Heading H1K. [Also in Divisions H2 and H3] A symmetrical switch comprises a semi-conductor material between ohmic electrodes the material being switchable from a generally amorphous high-resistance blocking state to a crystalline conductive state. It may be switched to. the conductive state by application of a direct voltage above a threshold value and is capable under certain conditions of remaining in this state while the current is reduced to zero but can be switched back to the blocking state by a current pulse above a threshold value. Three types of device, referred to as the HILO, CIRCUIT BREAKER and MECHANISM WITH MEMORY devices respectively are described. The first two may also be rendered conductive by an alternating voltage above a threshold value and remain so when the current is removed but can be rendered blocking again when the applied voltage is below the threshold by a pulse current above a certain value. In the case of the circuit breaker reversion to the blocking state occurs even if the current is slowly raised to such a value. Response of the mechanism devices with memory to alternating currents is different. They switch on when the alternating voltage peak exceeds a threshold but switch off momentarily during the low-current parts of each cycle and switch off altogether when the applied voltage falls to a lower threshold value. In all cases the threshold values are temperature variable. The same physical constructions are used for all three types of device. Typically the semi-conductor material is in the form of a body with electrodes on opposed faces or on the same face. Alternatively it is a layer on one face of a conductive or insulating block. Where the block is conductive it may constitute one electrode of one device or the common electrode of two series-connected devices. In each case further control electrodes may be provided on the body or layer. In a particular form of device the body is necked and insulated control electrodes are provided on the necked region between the main electrodes. The semi-conductor material may alternatively be a coating on one or both of two wires which may be in contact side by side or crossing one another or twisted together. Lead sulphide and specified mixtures of tellurium and germanium which may contain vanadium pentoxide, magnetic particles, or gallium arsenide and iron as additives, of tellurium and antimony, gallium antimonide, nickel, silicon or indium antimonide, and of selenium and germanium are suitable materials for use in HILO devices. Various treatments and methods of providing electrodes to such materials are discussed. HILO devices may alternatively consist of aluminium or tellurium between layers of tellurium oxide each provided with an electrode or of surface oxidized copper, iron or aluminium wires twisted together. Circuit breakers may consist of specified mixtures of tellurium and germanium with or without silicon, caesium, or gallium arsenide and iron, bodies of selenium-germanium, or bodies of tellurium-germanium coated with a mixture of tellurium, arsenic, gallium and lead sulphide. The alloy materials are prepared by grinding up the components, melting in a sealed vessel and grinding or casting the resulting material to the required form. Alternatively they may be vapour deposited on a substrate. It is stated that the materials may be improved and stabilized by additions of arsenic, sulphur, phosphorus, antimony, arsenides, sulphides, phosphides and antimonides, gold, carbon, chlorine, oxygen, nickel, iron, manganese, aluminium, caesium and other alkali or alkaline earth metals, by electroforming, and by various mechanical and heat treatments, etching and radiation bombardment. The theory of operation of the devices is discussed in the Specification.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US22684362A | 1962-09-28 | 1962-09-28 | |
| US25251163A | 1963-01-18 | 1963-01-18 | |
| US25246763A | 1963-01-18 | 1963-01-18 | |
| US25251063A | 1963-01-18 | 1963-01-18 | |
| US28824163A | 1963-06-17 | 1963-06-17 | |
| US358841A US3336484A (en) | 1964-04-10 | 1964-04-10 | Power switching circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1070411A true GB1070411A (en) | 1967-06-01 |
Family
ID=27559185
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB54994/66A Expired GB1070412A (en) | 1962-09-28 | 1963-09-20 | Improvements in or relating to symmetrical current controlling devices |
| GB37137/63A Expired GB1070411A (en) | 1962-09-28 | 1963-09-20 | Improvements in or relating to symmetrical current controlling devices |
| GB15084/65A Expired GB1108945A (en) | 1962-09-28 | 1965-04-09 | Improvements in or relating to power switching circuits |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB54994/66A Expired GB1070412A (en) | 1962-09-28 | 1963-09-20 | Improvements in or relating to symmetrical current controlling devices |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB15084/65A Expired GB1108945A (en) | 1962-09-28 | 1965-04-09 | Improvements in or relating to power switching circuits |
Country Status (11)
| Country | Link |
|---|---|
| JP (2) | JPS503916B1 (en) |
| AT (1) | AT280428B (en) |
| CH (1) | CH471441A (en) |
| DE (3) | DE1465470A1 (en) |
| DK (1) | DK118782B (en) |
| FI (1) | FI45710C (en) |
| FR (2) | FR1396321A (en) |
| GB (3) | GB1070412A (en) |
| NL (2) | NL158968B (en) |
| NO (1) | NO127780B (en) |
| SE (3) | SE355265B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2118790A (en) * | 1982-02-16 | 1983-11-02 | Bonar Instr Limited | Universal motor control |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3648124A (en) * | 1970-06-10 | 1972-03-07 | Ibm | Gated metal-semiconductor transition device |
| US3748501A (en) * | 1971-04-30 | 1973-07-24 | Energy Conversion Devices Inc | Multi-terminal amorphous electronic control device |
| GB1469814A (en) * | 1973-04-26 | 1977-04-06 | Energy Conversion Devices Inc | Solid state electronic device and circuit therefor |
| JPS5267532A (en) * | 1975-12-03 | 1977-06-04 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor memory unit |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2751477A (en) * | 1952-07-15 | 1956-06-19 | Pittsburgh Plate Glass Co | Electrical resistive device |
| US2948837A (en) * | 1956-09-04 | 1960-08-09 | Mc Graw Edison Co | Solid state electronic switch and circuits therefor |
-
0
- NL NL298324D patent/NL298324A/xx unknown
-
1963
- 1963-06-20 DE DE19631465470 patent/DE1465470A1/en active Pending
- 1963-09-13 NO NO00150081A patent/NO127780B/no unknown
- 1963-09-20 GB GB54994/66A patent/GB1070412A/en not_active Expired
- 1963-09-20 GB GB37137/63A patent/GB1070411A/en not_active Expired
- 1963-09-24 NL NL298324.A patent/NL158968B/en not_active IP Right Cessation
- 1963-09-25 DE DE19631464574 patent/DE1464574B1/en not_active Withdrawn
- 1963-09-26 AT AT09685/67A patent/AT280428B/en not_active IP Right Cessation
- 1963-09-27 CH CH1195163A patent/CH471441A/en not_active IP Right Cessation
- 1963-09-27 FR FR948929A patent/FR1396321A/en not_active Expired
- 1963-09-27 SE SE17320/67A patent/SE355265B/xx unknown
- 1963-09-27 SE SE10575/63A patent/SE326499B/xx unknown
- 1963-09-28 DK DK456663AA patent/DK118782B/en unknown
-
1964
- 1964-01-14 FI FI640062A patent/FI45710C/en active
-
1965
- 1965-04-09 FR FR12738A patent/FR1436202A/en not_active Expired
- 1965-04-09 GB GB15084/65A patent/GB1108945A/en not_active Expired
- 1965-04-09 DE DE1488833A patent/DE1488833C3/en not_active Expired
- 1965-04-09 SE SE04622/65A patent/SE332024B/xx unknown
-
1966
- 1966-10-14 JP JP41067255A patent/JPS503916B1/ja active Pending
- 1966-10-14 JP JP41067254A patent/JPS509475B1/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2118790A (en) * | 1982-02-16 | 1983-11-02 | Bonar Instr Limited | Universal motor control |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1488833B2 (en) | 1972-04-13 |
| NL298324A (en) | 1900-01-01 |
| JPS509475B1 (en) | 1975-04-12 |
| DE1488833C3 (en) | 1975-07-24 |
| CH471441A (en) | 1969-04-15 |
| SE332024B (en) | 1971-01-25 |
| FI45710C (en) | 1972-08-10 |
| DK118782B (en) | 1970-10-05 |
| NL158968B (en) | 1978-12-15 |
| SE355265B (en) | 1973-04-09 |
| AT280428B (en) | 1970-04-10 |
| GB1108945A (en) | 1968-04-10 |
| DE1488833A1 (en) | 1969-02-20 |
| FR1436202A (en) | 1966-04-22 |
| DE1465470A1 (en) | 1969-08-07 |
| DE1464574B1 (en) | 1971-03-25 |
| GB1070412A (en) | 1967-06-01 |
| SE326499B (en) | 1970-07-27 |
| NO127780B (en) | 1973-08-13 |
| FI45710B (en) | 1972-05-02 |
| JPS503916B1 (en) | 1975-02-12 |
| FR1396321A (en) | 1965-04-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3271591A (en) | Symmetrical current controlling device | |
| US3343034A (en) | Transient suppressor | |
| Walsh et al. | Conduction and electrical switching in amorphous chalcogenide semiconductor films | |
| US2791760A (en) | Semiconductive translating device | |
| US2691577A (en) | Alloys and rectifiers made thereof | |
| US2530110A (en) | Nonlinear circuit device utilizing germanium | |
| US2603692A (en) | Rectifier and method of making it | |
| GB1480401A (en) | Filament-type semiconductor switch device and method of making the same | |
| US2447829A (en) | Germanium-helium alloys and rectifiers made therefrom | |
| US3343004A (en) | Heat responsive control system | |
| GB1070411A (en) | Improvements in or relating to symmetrical current controlling devices | |
| US3343085A (en) | Overvoltage protection of a.c. measuring devices | |
| GB1413431A (en) | Solid-state switching systems | |
| US3588638A (en) | Current controlling device including v02 | |
| US2811569A (en) | Contacting semi-metallic electrical conductors | |
| US3260894A (en) | Protective means for circuit interrupting devices | |
| US2719253A (en) | Nonlinear conduction elements | |
| US3432729A (en) | Terminal connections for amorphous solid-state switching devices | |
| US3206340A (en) | Process for treating semiconductors | |
| US2916810A (en) | Electric contacts | |
| US3629155A (en) | Electronic bistable semiconductor switching element and method of making same | |
| US3571670A (en) | tching device including boron and silicon, carbon or the like | |
| US3571669A (en) | Current controlling device utilizing sulphur and a transition metal | |
| GB1204702A (en) | Improvements in or relating to electrical circuits using symmetrical electric current control devices | |
| US3574676A (en) | Ohmic contacts on rare earth chalcogenides |