GB1108945A - Improvements in or relating to power switching circuits - Google Patents

Improvements in or relating to power switching circuits

Info

Publication number
GB1108945A
GB1108945A GB15084/65A GB1508465A GB1108945A GB 1108945 A GB1108945 A GB 1108945A GB 15084/65 A GB15084/65 A GB 15084/65A GB 1508465 A GB1508465 A GB 1508465A GB 1108945 A GB1108945 A GB 1108945A
Authority
GB
United Kingdom
Prior art keywords
layer
voltage
circuit
series
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB15084/65A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US358841A external-priority patent/US3336484A/en
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of GB1108945A publication Critical patent/GB1108945A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/70—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices having only two electrodes and exhibiting negative resistance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/253—Multistable switching devices, e.g. memristors having three or more electrodes, e.g. transistor-like devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822—Sulfides, e.g. CuS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Control Of Resistance Heating (AREA)
  • Thyristors (AREA)
  • Contacts (AREA)
  • Semiconductor Memories (AREA)
  • Control Of Electrical Variables (AREA)
  • Thermistors And Varistors (AREA)
  • Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

1,108,945. Semi-conductor switching circuits. ENERGY CONVERSION DEVICES Inc. 9 April, 1965 [10 April, 1964], No. 15084/65. Addition to 1,070,412. Heading H3T. [Also in Divisions H1 and H2] A switchable A.C. circuit comprises a load and a series-connected pair of semi-conductor bodies or layers of the type described in Specification 1,109,102 which go conductive above an upper threshold value of applied voltage amplitude and revert to a non-conductive state when the amplitude falls below a lower threshold. The amplitude of the supply voltage is less than the sum of the upper threshold voltages of the layers and the control circuit, connected in parallel with one of the layers is designed to apply a voltage in excess of the upper threshold to the other layer to switch it on. The control circuit impedance is such that with the other layer conductive the voltage across the first layer exceeds the threshold to render it conductive thus short-circuiting the control circuit. Near the end of each half cycle the layers go non-conductive but conduction is re-established in the succeeding halfcycle providing the lower threshold voltage of the series layer is exceeded. In a typical circuit the control circuit consists of a mechanical switch in series with a resistor having a value intermediate the resistances of the parallel layer in its two states. Alternatively, in a circuit for controlling the value of a physical variable e.g. temperature or pressure by a heater or pump which consistitutes or is operated by a relay constituting the load, the circuit consists of a resistor controlled by the variable. For example a heater may be controlled by a resistor the value of which increases with temperature to reduce the voltage across the series layer below the threshold and thus open circuit the heater. When the temperature falls to a certain level the voltage across the series layer exceeds the upper threshold and the circuit is re-established. The sensitivity of the resistor and closeness of the upper and lower threshold voltages determine the precision of the temperature control. In alternative circuits e.g. that shown in Fig. 7, the control circuit consists of the secondaries of one or more control signal transformers and a resistor 27<SP>11</SP> the value of which is such that both layers remain non- conductive in the absence of a control signal. When a suitable signal is applied by closing switch 30 or 30<SP>1</SP> the threshold voltage of the series layer, in this case the end of layer 10b is exceeded to close the load circuit. Instead of the OR control thus provided AND control may be obtained by connecting the transformer secondaries in series.
GB15084/65A 1962-09-28 1965-04-09 Improvements in or relating to power switching circuits Expired GB1108945A (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US22684362A 1962-09-28 1962-09-28
US25251063A 1963-01-18 1963-01-18
US25246763A 1963-01-18 1963-01-18
US25251163A 1963-01-18 1963-01-18
US28824163A 1963-06-17 1963-06-17
US358841A US3336484A (en) 1964-04-10 1964-04-10 Power switching circuit

Publications (1)

Publication Number Publication Date
GB1108945A true GB1108945A (en) 1968-04-10

Family

ID=27559185

Family Applications (3)

Application Number Title Priority Date Filing Date
GB37137/63A Expired GB1070411A (en) 1962-09-28 1963-09-20 Improvements in or relating to symmetrical current controlling devices
GB54994/66A Expired GB1070412A (en) 1962-09-28 1963-09-20 Improvements in or relating to symmetrical current controlling devices
GB15084/65A Expired GB1108945A (en) 1962-09-28 1965-04-09 Improvements in or relating to power switching circuits

Family Applications Before (2)

Application Number Title Priority Date Filing Date
GB37137/63A Expired GB1070411A (en) 1962-09-28 1963-09-20 Improvements in or relating to symmetrical current controlling devices
GB54994/66A Expired GB1070412A (en) 1962-09-28 1963-09-20 Improvements in or relating to symmetrical current controlling devices

Country Status (11)

Country Link
JP (2) JPS503916B1 (en)
AT (1) AT280428B (en)
CH (1) CH471441A (en)
DE (3) DE1465470A1 (en)
DK (1) DK118782B (en)
FI (1) FI45710C (en)
FR (2) FR1396321A (en)
GB (3) GB1070411A (en)
NL (2) NL158968B (en)
NO (1) NO127780B (en)
SE (3) SE326499B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648124A (en) * 1970-06-10 1972-03-07 Ibm Gated metal-semiconductor transition device
US3748501A (en) * 1971-04-30 1973-07-24 Energy Conversion Devices Inc Multi-terminal amorphous electronic control device
GB1469814A (en) * 1973-04-26 1977-04-06 Energy Conversion Devices Inc Solid state electronic device and circuit therefor
JPS5267532A (en) * 1975-12-03 1977-06-04 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory unit
GB2118790A (en) * 1982-02-16 1983-11-02 Bonar Instr Limited Universal motor control

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2751477A (en) * 1952-07-15 1956-06-19 Pittsburgh Plate Glass Co Electrical resistive device
US2948837A (en) * 1956-09-04 1960-08-09 Mc Graw Edison Co Solid state electronic switch and circuits therefor

Also Published As

Publication number Publication date
DE1488833B2 (en) 1972-04-13
DK118782B (en) 1970-10-05
SE355265B (en) 1973-04-09
NL298324A (en) 1900-01-01
AT280428B (en) 1970-04-10
NL158968B (en) 1978-12-15
FI45710C (en) 1972-08-10
DE1488833C3 (en) 1975-07-24
NO127780B (en) 1973-08-13
JPS509475B1 (en) 1975-04-12
SE326499B (en) 1970-07-27
GB1070412A (en) 1967-06-01
DE1488833A1 (en) 1969-02-20
CH471441A (en) 1969-04-15
DE1464574B1 (en) 1971-03-25
DE1465470A1 (en) 1969-08-07
FI45710B (en) 1972-05-02
GB1070411A (en) 1967-06-01
FR1436202A (en) 1966-04-22
SE332024B (en) 1971-01-25
JPS503916B1 (en) 1975-02-12
FR1396321A (en) 1965-04-23

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