DK118782B - Electrical contact consisting of a solid body with at least two electrodes. - Google Patents
Electrical contact consisting of a solid body with at least two electrodes.Info
- Publication number
- DK118782B DK118782B DK456663AA DK456663A DK118782B DK 118782 B DK118782 B DK 118782B DK 456663A A DK456663A A DK 456663AA DK 456663 A DK456663 A DK 456663A DK 118782 B DK118782 B DK 118782B
- Authority
- DK
- Denmark
- Prior art keywords
- electrodes
- electrical contact
- solid body
- contact consisting
- solid
- Prior art date
Links
- 239000007787 solid Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/70—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices having only two electrodes and exhibiting negative resistance
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/253—Multistable switching devices, e.g. memristors having three or more terminals, e.g. transistor-like devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8822—Sulfides, e.g. CuS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US22684362A | 1962-09-28 | 1962-09-28 | |
| US25251163A | 1963-01-18 | 1963-01-18 | |
| US25246763A | 1963-01-18 | 1963-01-18 | |
| US25251063A | 1963-01-18 | 1963-01-18 | |
| US28824163A | 1963-06-17 | 1963-06-17 | |
| US358841A US3336484A (en) | 1964-04-10 | 1964-04-10 | Power switching circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DK118782B true DK118782B (en) | 1970-10-05 |
Family
ID=27559185
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK456663AA DK118782B (en) | 1962-09-28 | 1963-09-28 | Electrical contact consisting of a solid body with at least two electrodes. |
Country Status (11)
| Country | Link |
|---|---|
| JP (2) | JPS503916B1 (en) |
| AT (1) | AT280428B (en) |
| CH (1) | CH471441A (en) |
| DE (3) | DE1465470A1 (en) |
| DK (1) | DK118782B (en) |
| FI (1) | FI45710C (en) |
| FR (2) | FR1396321A (en) |
| GB (3) | GB1070411A (en) |
| NL (2) | NL158968B (en) |
| NO (1) | NO127780B (en) |
| SE (3) | SE355265B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3648124A (en) * | 1970-06-10 | 1972-03-07 | Ibm | Gated metal-semiconductor transition device |
| US3748501A (en) * | 1971-04-30 | 1973-07-24 | Energy Conversion Devices Inc | Multi-terminal amorphous electronic control device |
| GB1469814A (en) * | 1973-04-26 | 1977-04-06 | Energy Conversion Devices Inc | Solid state electronic device and circuit therefor |
| JPS5267532A (en) * | 1975-12-03 | 1977-06-04 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor memory unit |
| GB2118790A (en) * | 1982-02-16 | 1983-11-02 | Bonar Instr Limited | Universal motor control |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2751477A (en) * | 1952-07-15 | 1956-06-19 | Pittsburgh Plate Glass Co | Electrical resistive device |
| US2948837A (en) * | 1956-09-04 | 1960-08-09 | Mc Graw Edison Co | Solid state electronic switch and circuits therefor |
-
0
- NL NL298324D patent/NL298324A/xx unknown
-
1963
- 1963-06-20 DE DE19631465470 patent/DE1465470A1/en active Pending
- 1963-09-13 NO NO00150081A patent/NO127780B/no unknown
- 1963-09-20 GB GB37137/63A patent/GB1070411A/en not_active Expired
- 1963-09-20 GB GB54994/66A patent/GB1070412A/en not_active Expired
- 1963-09-24 NL NL298324.A patent/NL158968B/en not_active IP Right Cessation
- 1963-09-25 DE DE19631464574 patent/DE1464574B1/en not_active Withdrawn
- 1963-09-26 AT AT09685/67A patent/AT280428B/en not_active IP Right Cessation
- 1963-09-27 FR FR948929A patent/FR1396321A/en not_active Expired
- 1963-09-27 SE SE17320/67A patent/SE355265B/xx unknown
- 1963-09-27 SE SE10575/63A patent/SE326499B/xx unknown
- 1963-09-27 CH CH1195163A patent/CH471441A/en not_active IP Right Cessation
- 1963-09-28 DK DK456663AA patent/DK118782B/en unknown
-
1964
- 1964-01-14 FI FI640062A patent/FI45710C/en active
-
1965
- 1965-04-09 SE SE04622/65A patent/SE332024B/xx unknown
- 1965-04-09 DE DE1488833A patent/DE1488833C3/en not_active Expired
- 1965-04-09 GB GB15084/65A patent/GB1108945A/en not_active Expired
- 1965-04-09 FR FR12738A patent/FR1436202A/en not_active Expired
-
1966
- 1966-10-14 JP JP41067255A patent/JPS503916B1/ja active Pending
- 1966-10-14 JP JP41067254A patent/JPS509475B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| AT280428B (en) | 1970-04-10 |
| CH471441A (en) | 1969-04-15 |
| GB1108945A (en) | 1968-04-10 |
| FI45710B (en) | 1972-05-02 |
| JPS509475B1 (en) | 1975-04-12 |
| FR1396321A (en) | 1965-04-23 |
| SE326499B (en) | 1970-07-27 |
| NO127780B (en) | 1973-08-13 |
| FI45710C (en) | 1972-08-10 |
| JPS503916B1 (en) | 1975-02-12 |
| DE1464574B1 (en) | 1971-03-25 |
| SE332024B (en) | 1971-01-25 |
| SE355265B (en) | 1973-04-09 |
| NL158968B (en) | 1978-12-15 |
| DE1488833C3 (en) | 1975-07-24 |
| DE1488833A1 (en) | 1969-02-20 |
| NL298324A (en) | 1900-01-01 |
| DE1488833B2 (en) | 1972-04-13 |
| DE1465470A1 (en) | 1969-08-07 |
| FR1436202A (en) | 1966-04-22 |
| GB1070411A (en) | 1967-06-01 |
| GB1070412A (en) | 1967-06-01 |
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