GB1070412A - Improvements in or relating to symmetrical current controlling devices - Google Patents

Improvements in or relating to symmetrical current controlling devices

Info

Publication number
GB1070412A
GB1070412A GB54994/66A GB5499466A GB1070412A GB 1070412 A GB1070412 A GB 1070412A GB 54994/66 A GB54994/66 A GB 54994/66A GB 5499466 A GB5499466 A GB 5499466A GB 1070412 A GB1070412 A GB 1070412A
Authority
GB
United Kingdom
Prior art keywords
arsenic
electrodes
germanium
semi
gallium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB54994/66A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Priority claimed from US358841A external-priority patent/US3336484A/en
Publication of GB1070412A publication Critical patent/GB1070412A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/70—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices having only two electrodes and exhibiting negative resistance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/253—Multistable switching devices, e.g. memristors having three or more terminals, e.g. transistor-like devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822—Sulfides, e.g. CuS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

Abstract

1,070,412. Semi-conductor switches. ENERGY CONVERSION DEVICES INCORPORATED. Sept. 20, 1963 [Sept. 28, 1962; Jan. 18, 1963 (3); June 17, 1963], No. 54994/66. Divided out of 1,070,411. Heading H1K. [Also in Divisions G1, H2 and H3] A symmetrical switch comprises a semi-conductor material between ohmic electrodes, the material being reversibly switchable from a blocking to a conductive state. It may be switched from the blocking to the conducting state by application of a direct or alternating voltage the instantaneous value of which exceeds a threshold value and reverts to the blocking state when the instantaneous current falls below a minimum holding value, and thus in every half cycle where an alternating voltage is applied. Superimposition of a direct voltage on the alternating voltage causes an increase in resistance in the conductive state which remains after the removal of the direct voltage, but increasing the applied alternating voltage well above the threshold value decreases the resistance. In a typical device the semi-conductor material is in the form of a body with electrodes on opposed faces or on the same face. Alternatively it is a layer on one face of a conductive or insulating block. Where the block is conductive it may constitute one electrode of a device or the common electrode of a pair of series-connected devices. In each case further control electrodes may be provided on the body or layer. In a particular form of device the body is necked and insulated control electrodes are provided on the necked region between the main electrodes. The semi-conductor material may alternatively be a coating on one or both of two wires which may lie in contact side by side or crossing one another or twisted together Specified mixtures of tellurium with arsenic, germanium, gallium arsenide, silicon, indium antimonide gallium, germanium and silicon, germanium and gallium arsenide, gallium and arsenic, or arsenic and germanium, mixtures of arsenic, tellurium, germanium and silicon, and mixtures of tellurium, arsenic gallium and lead sulphide are suitable materials. Various treatments and methods of providing electrodes to such materials are discussed. The materials may be prepared by grinding up the components, melting in a sealed vessel and grinding or casting the resulting material to the required form. Alternatively they may be vapour deposited on a substrate. For instance, a sequence of layers of Te, As, Ge, As, and Te may be deposited on a steel substrate, the layers unified by heating and tungsten electrodes then provided. It is stated that the materials in general may be improved and stabilized by additions of arsenic, sulphur, phosphorus, antimony, arsenides, sulphides, phosphides and antimonides, gold, carbon, chlorine, oxygen, nickel, iron, manganese, aluminium, caesium and other alkali or alkaline earth metals, by electroforming, and by various mechanical and heat treatments, etching, and radiation bombardment. The theory of operation of the devices is discussed in the Specification.
GB54994/66A 1962-09-28 1963-09-20 Improvements in or relating to symmetrical current controlling devices Expired GB1070412A (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US22684362A 1962-09-28 1962-09-28
US25246763A 1963-01-18 1963-01-18
US25251063A 1963-01-18 1963-01-18
US25251163A 1963-01-18 1963-01-18
US28824163A 1963-06-17 1963-06-17
US358841A US3336484A (en) 1964-04-10 1964-04-10 Power switching circuit

Publications (1)

Publication Number Publication Date
GB1070412A true GB1070412A (en) 1967-06-01

Family

ID=27559185

Family Applications (3)

Application Number Title Priority Date Filing Date
GB54994/66A Expired GB1070412A (en) 1962-09-28 1963-09-20 Improvements in or relating to symmetrical current controlling devices
GB37137/63A Expired GB1070411A (en) 1962-09-28 1963-09-20 Improvements in or relating to symmetrical current controlling devices
GB15084/65A Expired GB1108945A (en) 1962-09-28 1965-04-09 Improvements in or relating to power switching circuits

Family Applications After (2)

Application Number Title Priority Date Filing Date
GB37137/63A Expired GB1070411A (en) 1962-09-28 1963-09-20 Improvements in or relating to symmetrical current controlling devices
GB15084/65A Expired GB1108945A (en) 1962-09-28 1965-04-09 Improvements in or relating to power switching circuits

Country Status (11)

Country Link
JP (2) JPS503916B1 (en)
AT (1) AT280428B (en)
CH (1) CH471441A (en)
DE (3) DE1465470A1 (en)
DK (1) DK118782B (en)
FI (1) FI45710C (en)
FR (2) FR1396321A (en)
GB (3) GB1070412A (en)
NL (2) NL158968B (en)
NO (1) NO127780B (en)
SE (3) SE326499B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648124A (en) * 1970-06-10 1972-03-07 Ibm Gated metal-semiconductor transition device
US3748501A (en) * 1971-04-30 1973-07-24 Energy Conversion Devices Inc Multi-terminal amorphous electronic control device
GB1469814A (en) * 1973-04-26 1977-04-06 Energy Conversion Devices Inc Solid state electronic device and circuit therefor
JPS5267532A (en) * 1975-12-03 1977-06-04 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory unit
GB2118790A (en) * 1982-02-16 1983-11-02 Bonar Instr Limited Universal motor control

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2751477A (en) * 1952-07-15 1956-06-19 Pittsburgh Plate Glass Co Electrical resistive device
US2948837A (en) * 1956-09-04 1960-08-09 Mc Graw Edison Co Solid state electronic switch and circuits therefor

Also Published As

Publication number Publication date
FI45710C (en) 1972-08-10
GB1070411A (en) 1967-06-01
SE326499B (en) 1970-07-27
GB1108945A (en) 1968-04-10
DE1488833C3 (en) 1975-07-24
AT280428B (en) 1970-04-10
DK118782B (en) 1970-10-05
DE1488833A1 (en) 1969-02-20
NL158968B (en) 1978-12-15
SE355265B (en) 1973-04-09
DE1464574B1 (en) 1971-03-25
JPS503916B1 (en) 1975-02-12
DE1488833B2 (en) 1972-04-13
NO127780B (en) 1973-08-13
SE332024B (en) 1971-01-25
FR1436202A (en) 1966-04-22
CH471441A (en) 1969-04-15
NL298324A (en) 1900-01-01
FR1396321A (en) 1965-04-23
FI45710B (en) 1972-05-02
DE1465470A1 (en) 1969-08-07
JPS509475B1 (en) 1975-04-12

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