SE337635B - - Google Patents
Info
- Publication number
- SE337635B SE337635B SE03760/67A SE376067A SE337635B SE 337635 B SE337635 B SE 337635B SE 03760/67 A SE03760/67 A SE 03760/67A SE 376067 A SE376067 A SE 376067A SE 337635 B SE337635 B SE 337635B
- Authority
- SE
- Sweden
- Prior art keywords
- wafer
- march
- forming
- applying
- channel
- Prior art date
Links
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 abstract 1
- 229910052786 argon Inorganic materials 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 238000010791 quenching Methods 0.000 abstract 1
- 230000000171 quenching effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052723 transition metal Inorganic materials 0.000 abstract 1
- 150000003624 transition metals Chemical class 0.000 abstract 1
- 229910001935 vanadium oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thermistors And Varistors (AREA)
Abstract
1,147,557. Semi-conductor switches. DANFOSS A.S. 7 March, 1967 [19 March, 1966], No. 10671/67. Heading H1K. A symmetrical switch which changes from a high to a low resistance condition when the applied voltage exceeds a threshold value and reverts when the current falls below a holding value, is made of a polycrystalline material exhibiting a discontinuity in its resistivitytemperature characteristic. Suitable materials are the lower oxides of transition metals, particularly vanadium oxide VO 2 and titanium oxide Ti 2 O 3 . The preferred device is made by forming a wafer of high-ohmic vanadium pentoxide by cathode sputtering in argon containing a little oxygen or by melting and quenching, applying electrodes to the opposed faces of the wafer and applying a forming voltage between them to convert a thin channel through the wafer to the form VO 2 . Preferably the channel has a length of <100Á and a diameter <10Á.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1966D0049648 DE1278626C2 (en) | 1966-03-19 | 1966-03-19 | ELECTRICAL SWITCHING ELEMENT AND PROCESS FOR ITS MANUFACTURING |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE337635B true SE337635B (en) | 1971-08-16 |
Family
ID=7052045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE03760/67A SE337635B (en) | 1966-03-19 | 1967-03-17 |
Country Status (8)
| Country | Link |
|---|---|
| AT (1) | AT269998B (en) |
| BE (1) | BE695237A (en) |
| DE (1) | DE1278626C2 (en) |
| DK (1) | DK130440B (en) |
| FR (1) | FR1515426A (en) |
| GB (1) | GB1147557A (en) |
| NL (1) | NL6703784A (en) |
| SE (1) | SE337635B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2509530A1 (en) * | 1981-07-10 | 1983-01-14 | Centre Nat Rech Scient | Switching device - using semiconductor layer of vanadium pent:oxide deposited at ambient temp. |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL284820A (en) * | 1961-11-06 |
-
1966
- 1966-03-19 DE DE1966D0049648 patent/DE1278626C2/en not_active Expired
-
1967
- 1967-02-24 AT AT187667A patent/AT269998B/en active
- 1967-03-07 GB GB10671/67A patent/GB1147557A/en not_active Expired
- 1967-03-09 BE BE695237D patent/BE695237A/xx unknown
- 1967-03-13 NL NL6703784A patent/NL6703784A/xx unknown
- 1967-03-17 SE SE03760/67A patent/SE337635B/xx unknown
- 1967-03-17 FR FR99317A patent/FR1515426A/en not_active Expired
- 1967-03-20 DK DK143867AA patent/DK130440B/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR1515426A (en) | 1968-03-01 |
| DE1278626B (en) | 1968-09-26 |
| AT269998B (en) | 1969-04-10 |
| BE695237A (en) | 1967-08-14 |
| DE1278626C2 (en) | 1976-11-04 |
| NL6703784A (en) | 1967-09-20 |
| DK130440B (en) | 1975-02-17 |
| GB1147557A (en) | 1969-04-02 |
| DK130440C (en) | 1975-07-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| IE812693L (en) | Gate enhanced rectifier | |
| GB439457A (en) | Improvements in or relating to electrical amplifiers and other control arrangements and devices | |
| GB1288090A (en) | ||
| GB1307598A (en) | Ceramic compositions | |
| JPS6431475A (en) | Superconducting device and forming method thereof | |
| NL6703784A (en) | ||
| GB1413431A (en) | Solid-state switching systems | |
| GB1416644A (en) | Electrical device incorporating a film of a n | |
| GB1260192A (en) | Improvements in or relating to current controlling devices | |
| GB1253700A (en) | Improvements in or relating to electric current controlling devices | |
| GB1138275A (en) | Solid state switching device | |
| NL273523A (en) | ||
| GB1060505A (en) | Improvements in or relating to semiconductor devices | |
| GB1070411A (en) | Improvements in or relating to symmetrical current controlling devices | |
| GB1260191A (en) | Improvements in or relating to current controlling devices | |
| GB1324417A (en) | Process of switching electrical current | |
| GB1031452A (en) | Overload protection clrcuit | |
| GB1145075A (en) | Semiconductor device | |
| GB1286115A (en) | Improvements in or relating to current controlling devices | |
| GB1100834A (en) | Electric switching circuit | |
| GB1181810A (en) | Ceramic Composition for Barrier Layer Capacitors | |
| GB1101569A (en) | Semiconductor switching element | |
| GB1158392A (en) | Improvements in Superconducting Materials | |
| GB1457749A (en) | Varistor | |
| NL7512533A (en) | Non-linear zinc oxide resistor - contg small amounts of oxides of bismuth, cobalt, manganese and another metal |