GB1416644A - Electrical device incorporating a film of a n - Google Patents
Electrical device incorporating a film of a nInfo
- Publication number
- GB1416644A GB1416644A GB1247273A GB1247273A GB1416644A GB 1416644 A GB1416644 A GB 1416644A GB 1247273 A GB1247273 A GB 1247273A GB 1247273 A GB1247273 A GB 1247273A GB 1416644 A GB1416644 A GB 1416644A
- Authority
- GB
- United Kingdom
- Prior art keywords
- film
- switching
- aluminium
- sputtering
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 4
- 238000004544 sputter deposition Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 2
- 238000005275 alloying Methods 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052750 molybdenum Inorganic materials 0.000 abstract 2
- 239000011733 molybdenum Substances 0.000 abstract 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 2
- 229910052721 tungsten Inorganic materials 0.000 abstract 2
- 239000010937 tungsten Substances 0.000 abstract 2
- 229910017083 AlN Inorganic materials 0.000 abstract 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 abstract 1
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 abstract 1
- 229910052786 argon Inorganic materials 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 229910052758 niobium Inorganic materials 0.000 abstract 1
- 239000010955 niobium Substances 0.000 abstract 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 abstract 1
- 238000010943 off-gassing Methods 0.000 abstract 1
- 239000003870 refractory metal Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Abstract
1416644 Non-volatile memory devices INTERNATIONAL BUSINESS MACHINE CORP 15 March 1973 [5 June 1972] 12472/73 Heading H1K A multi-state switch with non-volatile memory comprises a substrate of a refractory metal, e.g. tungsten, molybdenum, niobium or tantalum, a film of aluminium nitride formed thereon by sputtering after outgassing the substrate for at least 10 minutes at 350- 1500 C. at a pressure of from 2 Î 10<SP>-7</SP> to 2 Î 10<SP>-8</SP> Torr and an electrode on the film. Typically when using a 111 orientated mono- or polycrystalline tungsten or molybdenum substrate a series of presputtering steps in argon or nitrogen is performed prior to reactively sputtering aluminium in pure nitrogen at 1100 C. to form a film 0À2-10 Á thick. The film is electroded by alloying P- or N-type silicon to it at 1420-1800 C., or aluminium-silicon at above 576 C., or by sputtering, evaporating, or alloying on aluminium at 660-1800 C. A forming voltage of either polarity is then applied to realisethe switching characteristic. Switching from a high to a low impedance condition occurs above a threshold voltage with the electrode positive and reversion takes place when a threshold current of opposite polarity is exceeded. The ratio high/low impedance may be as high as 10,000 : 1 at very low switching frequencies but falls to about 20 : 1 at 100 kc./s. At a given frequency the values of the high and low impedances and the switching thresholds are determined by the amplitude of the voltages applied but switching is substantially independent of temperature in the range 4-500 K. The device finds use as a computer memory element,' high speed pulse or harmonic generator or electrically resettable circuit breaker.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US25993372A | 1972-06-05 | 1972-06-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1416644A true GB1416644A (en) | 1975-12-03 |
Family
ID=22987046
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1247273A Expired GB1416644A (en) | 1972-06-05 | 1973-03-15 | Electrical device incorporating a film of a n |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS4951882A (en) |
DE (1) | DE2325555A1 (en) |
FR (1) | FR2195032A1 (en) |
GB (1) | GB1416644A (en) |
IT (1) | IT982622B (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006121837A2 (en) | 2005-05-09 | 2006-11-16 | Sandisk 3D Llc | Nonvolatile memory cell comprising a diode and a resistance-switching material |
WO2007126679A2 (en) * | 2006-03-31 | 2007-11-08 | Sandisk 3D Llc | Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride |
US7808810B2 (en) | 2006-03-31 | 2010-10-05 | Sandisk 3D Llc | Multilevel nonvolatile memory cell comprising a resistivity-switching oxide or nitride and an antifuse |
US7816659B2 (en) | 2005-11-23 | 2010-10-19 | Sandisk 3D Llc | Devices having reversible resistivity-switching metal oxide or nitride layer with added metal |
US7824956B2 (en) | 2007-06-29 | 2010-11-02 | Sandisk 3D Llc | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
US7829875B2 (en) | 2006-03-31 | 2010-11-09 | Sandisk 3D Llc | Nonvolatile rewritable memory cell comprising a resistivity-switching oxide or nitride and an antifuse |
US7834338B2 (en) | 2005-11-23 | 2010-11-16 | Sandisk 3D Llc | Memory cell comprising nickel-cobalt oxide switching element |
US7846785B2 (en) | 2007-06-29 | 2010-12-07 | Sandisk 3D Llc | Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same |
US7902537B2 (en) | 2007-06-29 | 2011-03-08 | Sandisk 3D Llc | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
US8233308B2 (en) | 2007-06-29 | 2012-07-31 | Sandisk 3D Llc | Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SU1005223A1 (en) * | 1980-05-16 | 1983-03-15 | Ордена Трудового Красного Знамени Институт Радиотехники И Электроники Ан Ссср | Semiconductor storage device |
-
1973
- 1973-03-06 IT IT22105/73A patent/IT982622B/en active
- 1973-03-15 GB GB1247273A patent/GB1416644A/en not_active Expired
- 1973-04-10 FR FR7313801A patent/FR2195032A1/fr not_active Withdrawn
- 1973-05-16 JP JP48053750A patent/JPS4951882A/ja active Pending
- 1973-05-19 DE DE2325555A patent/DE2325555A1/en active Pending
Cited By (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8687410B2 (en) | 2005-05-09 | 2014-04-01 | Sandisk 3D Llc | Nonvolatile memory cell comprising a diode and a resistance-switching material |
EP1880389B1 (en) * | 2005-05-09 | 2011-09-21 | Sandisk 3D LLC | Nonvolatile memory cell comprising a diode and a resistance-switching material |
WO2006121837A2 (en) | 2005-05-09 | 2006-11-16 | Sandisk 3D Llc | Nonvolatile memory cell comprising a diode and a resistance-switching material |
US7812404B2 (en) | 2005-05-09 | 2010-10-12 | Sandisk 3D Llc | Nonvolatile memory cell comprising a diode and a resistance-switching material |
US7834338B2 (en) | 2005-11-23 | 2010-11-16 | Sandisk 3D Llc | Memory cell comprising nickel-cobalt oxide switching element |
US7816659B2 (en) | 2005-11-23 | 2010-10-19 | Sandisk 3D Llc | Devices having reversible resistivity-switching metal oxide or nitride layer with added metal |
US7875871B2 (en) | 2006-03-31 | 2011-01-25 | Sandisk 3D Llc | Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride |
US8227787B2 (en) | 2006-03-31 | 2012-07-24 | Sandisk 3D Llc | Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride |
WO2007126679A2 (en) * | 2006-03-31 | 2007-11-08 | Sandisk 3D Llc | Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride |
US8592792B2 (en) | 2006-03-31 | 2013-11-26 | Sandisk 3D Llc | Heterojunction device comprising a semiconductor oxide and a resistivity-switching oxide or nitride |
US7808810B2 (en) | 2006-03-31 | 2010-10-05 | Sandisk 3D Llc | Multilevel nonvolatile memory cell comprising a resistivity-switching oxide or nitride and an antifuse |
US7829875B2 (en) | 2006-03-31 | 2010-11-09 | Sandisk 3D Llc | Nonvolatile rewritable memory cell comprising a resistivity-switching oxide or nitride and an antifuse |
WO2007126679A3 (en) * | 2006-03-31 | 2008-04-24 | Sandisk 3D Llc | Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride |
US7902537B2 (en) | 2007-06-29 | 2011-03-08 | Sandisk 3D Llc | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
US8173486B2 (en) | 2007-06-29 | 2012-05-08 | Sandisk 3D Llc | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
US8233308B2 (en) | 2007-06-29 | 2012-07-31 | Sandisk 3D Llc | Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same |
US8373150B2 (en) | 2007-06-29 | 2013-02-12 | Sandisk 3D, Llc | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
US8507315B2 (en) | 2007-06-29 | 2013-08-13 | Sandisk 3D Llc | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
US7846785B2 (en) | 2007-06-29 | 2010-12-07 | Sandisk 3D Llc | Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same |
US7824956B2 (en) | 2007-06-29 | 2010-11-02 | Sandisk 3D Llc | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
US8809114B2 (en) | 2007-06-29 | 2014-08-19 | Sandisk 3D Llc | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
US8816315B2 (en) | 2007-06-29 | 2014-08-26 | Sandisk 3D Llc | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
US8913417B2 (en) | 2007-06-29 | 2014-12-16 | Sandisk 3D Llc | Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same |
Also Published As
Publication number | Publication date |
---|---|
JPS4951882A (en) | 1974-05-20 |
FR2195032A1 (en) | 1974-03-01 |
DE2325555A1 (en) | 1973-12-20 |
IT982622B (en) | 1974-10-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CSNS | Application of which complete specification have been accepted and published, but patent is not sealed |