IT982622B - PERFECTED STORAGE DEVICE - Google Patents

PERFECTED STORAGE DEVICE

Info

Publication number
IT982622B
IT982622B IT22105/73A IT2210573A IT982622B IT 982622 B IT982622 B IT 982622B IT 22105/73 A IT22105/73 A IT 22105/73A IT 2210573 A IT2210573 A IT 2210573A IT 982622 B IT982622 B IT 982622B
Authority
IT
Italy
Prior art keywords
switching
film
aluminium
sputtering
substrate
Prior art date
Application number
IT22105/73A
Other languages
Italian (it)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT982622B publication Critical patent/IT982622B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H10N70/026—Formation of the switching material, e.g. layer deposition by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides

Abstract

1416644 Non-volatile memory devices INTERNATIONAL BUSINESS MACHINE CORP 15 March 1973 [5 June 1972] 12472/73 Heading H1K A multi-state switch with non-volatile memory comprises a substrate of a refractory metal, e.g. tungsten, molybdenum, niobium or tantalum, a film of aluminium nitride formed thereon by sputtering after outgassing the substrate for at least 10 minutes at 350- 1500‹ C. at a pressure of from 2 Î 10<SP>-7</SP> to 2 Î 10<SP>-8</SP> Torr and an electrode on the film. Typically when using a 111 orientated mono- or polycrystalline tungsten or molybdenum substrate a series of presputtering steps in argon or nitrogen is performed prior to reactively sputtering aluminium in pure nitrogen at 1100‹ C. to form a film 0À2-10 Á thick. The film is electroded by alloying P- or N-type silicon to it at 1420-1800‹ C., or aluminium-silicon at above 576‹ C., or by sputtering, evaporating, or alloying on aluminium at 660-1800‹ C. A forming voltage of either polarity is then applied to realisethe switching characteristic. Switching from a high to a low impedance condition occurs above a threshold voltage with the electrode positive and reversion takes place when a threshold current of opposite polarity is exceeded. The ratio high/low impedance may be as high as 10,000 : 1 at very low switching frequencies but falls to about 20 : 1 at 100 kc./s. At a given frequency the values of the high and low impedances and the switching thresholds are determined by the amplitude of the voltages applied but switching is substantially independent of temperature in the range 4-500‹ K. The device finds use as a computer memory element,' high speed pulse or harmonic generator or electrically resettable circuit breaker.
IT22105/73A 1972-06-05 1973-03-06 PERFECTED STORAGE DEVICE IT982622B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US25993372A 1972-06-05 1972-06-05

Publications (1)

Publication Number Publication Date
IT982622B true IT982622B (en) 1974-10-21

Family

ID=22987046

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22105/73A IT982622B (en) 1972-06-05 1973-03-06 PERFECTED STORAGE DEVICE

Country Status (5)

Country Link
JP (1) JPS4951882A (en)
DE (1) DE2325555A1 (en)
FR (1) FR2195032A1 (en)
GB (1) GB1416644A (en)
IT (1) IT982622B (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU1005223A1 (en) * 1980-05-16 1983-03-15 Ордена Трудового Красного Знамени Институт Радиотехники И Электроники Ан Ссср Semiconductor storage device
US7812404B2 (en) 2005-05-09 2010-10-12 Sandisk 3D Llc Nonvolatile memory cell comprising a diode and a resistance-switching material
US7816659B2 (en) 2005-11-23 2010-10-19 Sandisk 3D Llc Devices having reversible resistivity-switching metal oxide or nitride layer with added metal
US7834338B2 (en) 2005-11-23 2010-11-16 Sandisk 3D Llc Memory cell comprising nickel-cobalt oxide switching element
US7875871B2 (en) * 2006-03-31 2011-01-25 Sandisk 3D Llc Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride
US7808810B2 (en) 2006-03-31 2010-10-05 Sandisk 3D Llc Multilevel nonvolatile memory cell comprising a resistivity-switching oxide or nitride and an antifuse
US7829875B2 (en) 2006-03-31 2010-11-09 Sandisk 3D Llc Nonvolatile rewritable memory cell comprising a resistivity-switching oxide or nitride and an antifuse
US7902537B2 (en) 2007-06-29 2011-03-08 Sandisk 3D Llc Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
US8233308B2 (en) 2007-06-29 2012-07-31 Sandisk 3D Llc Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
US7846785B2 (en) 2007-06-29 2010-12-07 Sandisk 3D Llc Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
US7824956B2 (en) 2007-06-29 2010-11-02 Sandisk 3D Llc Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same

Also Published As

Publication number Publication date
DE2325555A1 (en) 1973-12-20
FR2195032A1 (en) 1974-03-01
GB1416644A (en) 1975-12-03
JPS4951882A (en) 1974-05-20

Similar Documents

Publication Publication Date Title
IT982622B (en) PERFECTED STORAGE DEVICE
JP3950179B2 (en) Tunnel diode
FR2334201A1 (en) Non reversible semiconductor switching element - consists of resistance of polycrystalline silicon with high specific resistance
EP0132323A3 (en) Sputtered semiconducting films of catenated phosphorus material
GB1149589A (en) Thin film active element
US3098182A (en) Electrolytic capacitors
Sugeta et al. Bulk neuristor using the Gunn effect
GB1260192A (en) Improvements in or relating to current controlling devices
US3571669A (en) Current controlling device utilizing sulphur and a transition metal
US3463973A (en) Insulating ferroelectric gate adaptive resistor
US3493842A (en) Unipolar to bipolar converter
JPS62179162A (en) Semiconductor variable capacity element
US2974262A (en) Solid state device and method of making same
GB1209782A (en) Thin film capacitors
SU411611A1 (en)
SU652682A1 (en) Two-phase quadrature generator
Adam et al. Capacitance discharge in VO2 threshold switching devices
JPH0732239B2 (en) Semiconductor memory device
GB675373A (en) Electronic wave generator employing a transistor
SU570221A1 (en) Device for limiting current in discharge installations
SU409334A1 (en) DEVICE FOR SHORT LOAD PROTECTION
SU847374A1 (en) Analogue storage
SU416674A1 (en)
GB1157903A (en) Thin Film Capacitors
PROKOSHKIN et al. Investigation of the elastic stiffness of niobium low-alloys subjected to small plastic strains