SU1005223A1 - Semiconductor storage device - Google Patents

Abstract

The semiconductor memory contains a degenerate semiconductor layer (1) and a nondegenerate semiconductor layer (2) having traps in the energy gap. The conductivity type of the degenerate semiconductor layer (1) is opposite to that of the nondegenerate semiconductor layer (2). Situated between the degenerate semiconductor layer (1) and the nondegenerate semiconductor layer (2) is a dielectric layer (4) capable of tunnel conduction. Deposited on the nondegenerate semiconductor layer (2) is a layer of material (5) which forms a potential barrier with the nondegenerate semiconductor layer (2) and, together with the dielectric layer (4) which is capable of tunnel conduction, prevents the penetration of the charge carriers from the degenerate semiconductor layer (1) and from the ohmic contact (6) into the nondegenerate semiconductor layer (2). <IMAGE>

Description

one

The invention relates to computer technology and can be used to create permanent memory devices of computers and in automatics.

 And semiconductor memory devices based on glassy semiconductors that have the memory property when the power supply is disconnected are known. Such a device consists of a glass, o-shaped semiconductor, enclosed between metal electrodes. When a current is passed through the electrodes, the conductivity of the interelectrode material is changed, and 5 when the power is turned off, the resulting conductivity of the electrode gap does not change. The switching process is characterized by the voltage at which the process begins to change the conductivity value LI.

This voltage, called a threshold or switching voltage,

has a variation in magnitude both for a single element and for a number of elements on a single substrate, reaching tens of percent depending on or the technology used.

It is also known semiconductor memory device based on a heterojunction from a degenerate semi-. conductor and non-degenerate semiconductor film with traps in the forbidden zone, containing a contact element,

creating a potential barrier with a nondegenerate semiconductor. Device

I can be performed on the basis of the heterojunction S-i-SnO / i 2}

Claims (2)

However, the switching voltage in such a device has a rather significant variation in magnitude in various places of the semiconductor memory matrix. Such significant deviations of the threshold voltage require significant complications from the memory matrix control circuit, which in turn. The goal is to increase the number of elements of the control circuit and to increase the cost of such a storage device. According to the invention, the operation stability and the increase in the resistance ratio in the off and on state are higher. This goal is achieved by the fact that in a semiconductor memory device based on a heterojunction from a degenerate semiconductor and a non-degenerate semiconductor film with cleats in the forbidden zone containing a contact element that creates a potential barrier with a nondegenerate semiconductor, a layer of tenn is inserted between the degenerate floor and the non-degenerate semiconductor film transparent dielectric. The tunnel-transparent dielectric can be made of Si O,. In the case of a thin dielectric layer, the applied bias voltage is redistributed between the StiO / 2 layer and the thin dielectric layer. SiO films can be obtained by the method of oxidation in an oxygen atmosphere; they have very stable parameters (practically the spread across the plate has a value of less than 1%). Thus, with the same variation in the parameters of 5ViO / j Plenum, a significantly better stability of the threshold voltage of the switch can be obtained by reducing the effect of the ZiOd film, since the voltage drop on it decreases significantly. The introduction of such a layer reduces the scattering threshold voltage. A small variation in the threshold voltage allows us to simplify and speed up the matrix control circuit, reduce the number of errors in the recorded information several times and increase the reliability of such a storage device. In addition, the introduction of a thin dielectric in this way makes it possible to improve the resistivity ratio in the off and on state by almost an order of magnitude, which ensures reliable reading of the recorded information. Claims: Semiconductor memory device based on a heterojunction from a degenerate semiconductor and a non-degenerate semiconductor film with traps in the forbidden zone, containing a contact element that creates a potential barrier with a non-degenerate semiconductor, which is designed to increase stability and increase the ratio of resistances to off and on state, between a degenerate semiconductor and a non-degenerate semiconductor film, a layer of tunnel-transparency is introduced Nogo dielectric. Sources of information taken into account in the examination 1, Ovshinsky S. R, Reversibfe el en trfcal swithing phenomena In disorered structurs, Pfiys Rer, Letters, 1968, V 21, No. 20, p. 1450-1452. 2. USSR author's certificate in application Ns 2848351 / 18-25, cl. H 01 L 29/14, (prototype).