NL2020745B1 - Switching element control circuit and power module - Google Patents

Switching element control circuit and power module Download PDF

Info

Publication number
NL2020745B1
NL2020745B1 NL2020745A NL2020745A NL2020745B1 NL 2020745 B1 NL2020745 B1 NL 2020745B1 NL 2020745 A NL2020745 A NL 2020745A NL 2020745 A NL2020745 A NL 2020745A NL 2020745 B1 NL2020745 B1 NL 2020745B1
Authority
NL
Netherlands
Prior art keywords
switching element
electrode
voltage
control circuit
threshold voltage
Prior art date
Application number
NL2020745A
Other languages
English (en)
Dutch (nl)
Other versions
NL2020745A (en
Inventor
Suzuki Kenichi
Miyazawa Wataru
Original Assignee
Shindengen Electric Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Mfg filed Critical Shindengen Electric Mfg
Publication of NL2020745A publication Critical patent/NL2020745A/en
Application granted granted Critical
Publication of NL2020745B1 publication Critical patent/NL2020745B1/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/18—Modifications for indicating state of switch
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0048—Circuits or arrangements for reducing losses
    • H02M1/0054—Transistor switching losses
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0081—Power supply means, e.g. to the switch driver
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Landscapes

  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
NL2020745A 2017-04-25 2018-04-11 Switching element control circuit and power module NL2020745B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2017/016447 WO2018198211A1 (ja) 2017-04-25 2017-04-25 スイッチング素子制御回路及びパワーモジュール

Publications (2)

Publication Number Publication Date
NL2020745A NL2020745A (en) 2018-10-29
NL2020745B1 true NL2020745B1 (en) 2020-12-02

Family

ID=63919512

Family Applications (1)

Application Number Title Priority Date Filing Date
NL2020745A NL2020745B1 (en) 2017-04-25 2018-04-11 Switching element control circuit and power module

Country Status (8)

Country Link
US (1) US10879892B2 (zh)
JP (1) JP6766256B2 (zh)
CN (1) CN110447171B (zh)
DE (1) DE112017007476T5 (zh)
GB (1) GB2577182B (zh)
NL (1) NL2020745B1 (zh)
TW (1) TWI660583B (zh)
WO (1) WO2018198211A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3675360A1 (de) 2018-12-27 2020-07-01 Siemens Aktiengesellschaft Betreiben eines leistungshalbleiterelements
JP7303672B2 (ja) 2019-06-24 2023-07-05 株式会社東芝 駆動回路

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4857769A (en) * 1987-01-14 1989-08-15 Hitachi, Ltd. Threshold voltage fluctuation compensation circuit for FETS
JPH06252395A (ja) * 1993-02-24 1994-09-09 Nippon Telegr & Teleph Corp <Ntt> 閾値電圧導出方法
JP2002016486A (ja) * 2000-06-30 2002-01-18 Matsushita Electric Ind Co Ltd 半導体装置
JP3886876B2 (ja) * 2002-01-17 2007-02-28 三菱電機株式会社 電力用半導体素子の駆動回路
JP2006050776A (ja) * 2004-08-04 2006-02-16 Matsushita Electric Ind Co Ltd 半導体スイッチ回路および電力変換装置およびインバータ装置および空気調和機
US7453291B2 (en) * 2004-09-09 2008-11-18 The Regents Of The University Of California Switch linearized track and hold circuit for switch linearization
US7479770B2 (en) * 2005-04-28 2009-01-20 Texas Instruments Incorporated System and method for driving a power field-effect transistor (FET)
US7675346B2 (en) * 2006-07-11 2010-03-09 Delphi Technologies, Inc. Switching control system to reduce coil output voltage when commencing coil charging
US7365585B2 (en) * 2006-08-09 2008-04-29 Atmel Corporation Apparatus and method for charge pump slew rate control
US20100045650A1 (en) 2006-11-28 2010-02-25 Koninklijke Philips Electronics N.V. Active matrix display device with optical feedback and driving method thereof
TWI337754B (en) 2007-04-20 2011-02-21 Au Optronics Corp Semiconductor structure of display device and method for fabricating the same
JP2011200037A (ja) * 2010-03-19 2011-10-06 Toyota Motor Corp 半導体電力変換装置
JP5392578B2 (ja) * 2011-01-28 2014-01-22 株式会社デンソー 電子装置
JP5516825B2 (ja) 2011-05-11 2014-06-11 富士電機株式会社 絶縁ゲート型スイッチング素子の駆動回路
US9203393B2 (en) * 2012-08-30 2015-12-01 Denso Corporation Semiconductor apparatus
JP5812027B2 (ja) * 2013-03-05 2015-11-11 株式会社デンソー 駆動制御装置
KR102035302B1 (ko) 2013-04-25 2019-10-23 삼성디스플레이 주식회사 유기 발광 표시 장치의 화소 회로
US9599656B2 (en) * 2014-11-25 2017-03-21 Globalfoundries Inc. Methods, apparatus and system for voltage ramp testing
CN105356727B (zh) * 2015-11-27 2018-11-27 矽力杰半导体技术(杭州)有限公司 用于开关电源的开关管驱动控制方法以及控制电路
JP6683510B2 (ja) * 2016-03-17 2020-04-22 東京エレクトロンデバイス株式会社 半導体装置、メンテナンス装置、及びメンテナンス方法

Also Published As

Publication number Publication date
WO2018198211A1 (ja) 2018-11-01
NL2020745A (en) 2018-10-29
US10879892B2 (en) 2020-12-29
DE112017007476T5 (de) 2020-01-02
GB2577182B (en) 2022-02-02
JPWO2018198211A1 (ja) 2020-02-20
JP6766256B2 (ja) 2020-10-07
CN110447171A (zh) 2019-11-12
GB2577182A (en) 2020-03-18
TW201842732A (zh) 2018-12-01
GB201913309D0 (en) 2019-10-30
CN110447171B (zh) 2023-06-02
US20200052692A1 (en) 2020-02-13
TWI660583B (zh) 2019-05-21

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