NL2019954A - Radiation source apparatus and method, lithographic apparatus and inspection apparatus - Google Patents

Radiation source apparatus and method, lithographic apparatus and inspection apparatus Download PDF

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Publication number
NL2019954A
NL2019954A NL2019954A NL2019954A NL2019954A NL 2019954 A NL2019954 A NL 2019954A NL 2019954 A NL2019954 A NL 2019954A NL 2019954 A NL2019954 A NL 2019954A NL 2019954 A NL2019954 A NL 2019954A
Authority
NL
Netherlands
Prior art keywords
radiation
target
grating
euv
laser
Prior art date
Application number
NL2019954A
Other languages
English (en)
Dutch (nl)
Inventor
Spook Nicolaas
Clemens Maria Planken Paulus
Original Assignee
Asml Netherlands Bv
Stichting Voor Fundamenteel Onderzoek Der Materie
Univ Amsterdam
Stichting Vu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv, Stichting Voor Fundamenteel Onderzoek Der Materie, Univ Amsterdam, Stichting Vu filed Critical Asml Netherlands Bv
Publication of NL2019954A publication Critical patent/NL2019954A/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/008—X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
NL2019954A 2016-12-13 2017-11-22 Radiation source apparatus and method, lithographic apparatus and inspection apparatus NL2019954A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP16203624 2016-12-13

Publications (1)

Publication Number Publication Date
NL2019954A true NL2019954A (en) 2018-06-18

Family

ID=57544317

Family Applications (1)

Application Number Title Priority Date Filing Date
NL2019954A NL2019954A (en) 2016-12-13 2017-11-22 Radiation source apparatus and method, lithographic apparatus and inspection apparatus

Country Status (4)

Country Link
JP (1) JP7080236B2 (zh)
CN (1) CN110088682B (zh)
NL (1) NL2019954A (zh)
WO (1) WO2018108468A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109632727A (zh) * 2018-12-26 2019-04-16 厦门大学 一种基于气相激光等离子体可调真空紫外单光子电离装置
CN109600904B (zh) * 2019-01-08 2020-03-06 惠州学院 半导体激光加速器及其激光加速单元

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100366129C (zh) * 2002-05-13 2008-01-30 杰特克公司 用于产生辐射的方法和装置
JP4144870B2 (ja) * 2003-09-16 2008-09-03 キヤノン株式会社 近接場光を発生させる構造体、該構造体を有する近接場光ヘッド、該ヘッドを有する記録再生装置及び表面観察装置
JP5711326B2 (ja) * 2008-11-06 2015-04-30 ギガフォトン株式会社 極端紫外光生成装置
JP5578483B2 (ja) * 2009-09-01 2014-08-27 株式会社Ｉｈｉ Ｌｐｐ方式のｅｕｖ光源とその発生方法
JP5758662B2 (ja) * 2011-03-23 2015-08-05 国立大学法人大阪大学 極端紫外光生成装置及び極端紫外光生成方法
KR101958857B1 (ko) 2011-09-02 2019-03-15 에이에스엠엘 네델란즈 비.브이. 방사선 소스
JP2015536545A (ja) * 2012-11-07 2015-12-21 エーエスエムエル ネザーランズ ビー．ブイ． 放射を発生させる方法及び装置
US8872143B2 (en) * 2013-03-14 2014-10-28 Asml Netherlands B.V. Target for laser produced plasma extreme ultraviolet light source
JP2015096813A (ja) * 2013-11-15 2015-05-21 セイコーエプソン株式会社 ラマン分光装置、及び電子機器
JP6602388B6 (ja) * 2015-03-25 2020-01-15 エーエスエムエル ネザーランズ ビー．ブイ． メトロロジ方法、メトロロジ装置、及びデバイス製造装置

Also Published As

Publication number Publication date
CN110088682B (zh) 2022-06-10
CN110088682A (zh) 2019-08-02
JP2020501188A (ja) 2020-01-16
JP7080236B2 (ja) 2022-06-03
WO2018108468A1 (en) 2018-06-21

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