NL193808C - Metalliseringspatroon voor een halfgeleiderinrichting, en werkwijze voor het vervaardigen daarvan. - Google Patents

Metalliseringspatroon voor een halfgeleiderinrichting, en werkwijze voor het vervaardigen daarvan. Download PDF

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Publication number
NL193808C
NL193808C NL8503486A NL8503486A NL193808C NL 193808 C NL193808 C NL 193808C NL 8503486 A NL8503486 A NL 8503486A NL 8503486 A NL8503486 A NL 8503486A NL 193808 C NL193808 C NL 193808C
Authority
NL
Netherlands
Prior art keywords
layers
layer
metallization
metallization pattern
pattern
Prior art date
Application number
NL8503486A
Other languages
English (en)
Dutch (nl)
Other versions
NL193808B (nl
NL8503486A (nl
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Publication of NL8503486A publication Critical patent/NL8503486A/nl
Publication of NL193808B publication Critical patent/NL193808B/xx
Application granted granted Critical
Publication of NL193808C publication Critical patent/NL193808C/nl

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
NL8503486A 1984-12-20 1985-12-18 Metalliseringspatroon voor een halfgeleiderinrichting, en werkwijze voor het vervaardigen daarvan. NL193808C (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT2413984 1984-12-20
IT8424139A IT1213261B (it) 1984-12-20 1984-12-20 Dispositivo a semiconduttore con metallizzazione a piu' spessori eprocedimento per la sua fabbricazione.

Publications (3)

Publication Number Publication Date
NL8503486A NL8503486A (nl) 1986-07-16
NL193808B NL193808B (nl) 2000-07-03
NL193808C true NL193808C (nl) 2000-11-06

Family

ID=11212175

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8503486A NL193808C (nl) 1984-12-20 1985-12-18 Metalliseringspatroon voor een halfgeleiderinrichting, en werkwijze voor het vervaardigen daarvan.

Country Status (7)

Country Link
US (1) US4718977A (it)
JP (1) JPS61152042A (it)
DE (1) DE3544539C2 (it)
FR (1) FR2575332B1 (it)
GB (1) GB2168846B (it)
IT (1) IT1213261B (it)
NL (1) NL193808C (it)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4924287A (en) * 1985-01-20 1990-05-08 Avner Pdahtzur Personalizable CMOS gate array device and technique
IL82113A (en) * 1987-04-05 1992-08-18 Zvi Orbach Fabrication of customized integrated circuits
GB2206540B (en) * 1987-06-30 1991-03-27 British Aerospace Aperture forming method
JPH0290651A (ja) * 1988-09-28 1990-03-30 Nec Corp 半導体集積回路
FR2713397B1 (fr) * 1993-12-03 1996-02-16 Sgs Thomson Microelectronics Procédé de formation de couches métalliques minces et épaisses.
GB2290167B (en) * 1994-06-08 1999-01-20 Hyundai Electronics Ind Method for fabricating a semiconductor device
TW318261B (it) * 1995-09-21 1997-10-21 Handotai Energy Kenkyusho Kk
JP4179483B2 (ja) 1996-02-13 2008-11-12 株式会社半導体エネルギー研究所 表示装置の作製方法
FR2780202A1 (fr) * 1998-06-23 1999-12-24 St Microelectronics Sa Circuit integre a niveau de metallisation d'epaisseur variable
TW453139B (en) * 1998-07-13 2001-09-01 Siemens Ag Method to produce circuit-plates with coarse conductive patterns and at least one region with fine conductive patterns
DE19912441A1 (de) * 1999-03-19 2000-09-21 Elfo Ag Sachseln Sachseln Multi-Chip-Modul
US6077766A (en) * 1999-06-25 2000-06-20 International Business Machines Corporation Variable thickness pads on a substrate surface
DE102004003538B3 (de) * 2004-01-23 2005-09-08 Infineon Technologies Ag Integrierte Halbleiterschaltung mit einer Logik- und Leistungs-Metallisierung ohne Intermetall-Dielektrikum und Verfahren zu ihrer Herstellung
DE102004009296B4 (de) * 2004-02-26 2011-01-27 Siemens Ag Verfahren zum Herstellen einer Anordnung eines elektrischen Bauelements

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6706868A (it) * 1967-05-18 1968-11-19
US3700510A (en) * 1970-03-09 1972-10-24 Hughes Aircraft Co Masking techniques for use in fabricating microelectronic components
US4000842A (en) * 1975-06-02 1977-01-04 National Semiconductor Corporation Copper-to-gold thermal compression gang bonding of interconnect leads to semiconductive devices
US4017890A (en) * 1975-10-24 1977-04-12 International Business Machines Corporation Intermetallic compound layer in thin films for improved electromigration resistance
JPS52149990A (en) * 1976-06-09 1977-12-13 Hitachi Ltd Production of multilayer wirings
JPS5365088A (en) * 1976-11-22 1978-06-10 Nec Corp Semiconductor device
JPS53121490A (en) * 1977-03-31 1978-10-23 Toshiba Corp Semiconductor device
US4233337A (en) * 1978-05-01 1980-11-11 International Business Machines Corporation Method for forming semiconductor contacts
JPS5640260A (en) * 1979-09-11 1981-04-16 Mitsubishi Electric Corp Manufacture of semiconductor device
EP0060253A1 (en) * 1980-09-15 1982-09-22 Mostek Corporation Integrated circuit power distribution network
JPS58137231A (ja) * 1982-02-09 1983-08-15 Nec Corp 集積回路装置
JPS59500542A (ja) * 1982-04-12 1984-03-29 モトロ−ラ・インコ−ポレ−テツド Ｎ型ＧａＡｓ用のオ−ム接触装置
JPS58204558A (ja) * 1982-05-25 1983-11-29 Nec Corp 配線方法
DE3232837A1 (de) * 1982-09-03 1984-03-08 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen einer 2-ebenen-metallisierung fuer halbleiterbauelemente, insbesondere fuer leistungshalbleiterbauelemente wie thyristoren
JPS59198734A (ja) * 1983-04-25 1984-11-10 Mitsubishi Electric Corp 多層配線構造
GB8316476D0 (en) * 1983-06-16 1983-07-20 Plessey Co Plc Producing layered structure

Also Published As

Publication number Publication date
IT1213261B (it) 1989-12-14
GB2168846A (en) 1986-06-25
FR2575332A1 (fr) 1986-06-27
GB8531175D0 (en) 1986-01-29
FR2575332B1 (fr) 1996-05-24
IT8424139A0 (it) 1984-12-20
NL193808B (nl) 2000-07-03
JPS61152042A (ja) 1986-07-10
NL8503486A (nl) 1986-07-16
GB2168846B (en) 1988-11-30
DE3544539A1 (de) 1986-07-03
US4718977A (en) 1988-01-12
DE3544539C2 (de) 1996-02-08

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Effective date: 20050701