NL188488C - Magneto-elektrische transducent. - Google Patents

Magneto-elektrische transducent.

Info

Publication number
NL188488C
NL188488C NLAANVRAGE8520325,A NL8520325A NL188488C NL 188488 C NL188488 C NL 188488C NL 8520325 A NL8520325 A NL 8520325A NL 188488 C NL188488 C NL 188488C
Authority
NL
Netherlands
Prior art keywords
thin film
transducent
magneto
electric
ohmic electrode
Prior art date
Application number
NLAANVRAGE8520325,A
Other languages
English (en)
Dutch (nl)
Other versions
NL8520325A (nl
NL188488B (nl
Original Assignee
Asahi Chemical Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP60099396A external-priority patent/JPS61256777A/ja
Priority claimed from JP60099395A external-priority patent/JPS61256776A/ja
Priority claimed from JP60110155A external-priority patent/JPS61269386A/ja
Application filed by Asahi Chemical Ind filed Critical Asahi Chemical Ind
Publication of NL8520325A publication Critical patent/NL8520325A/nl
Publication of NL188488B publication Critical patent/NL188488B/xx
Application granted granted Critical
Publication of NL188488C publication Critical patent/NL188488C/xx

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N35/00—Magnetostrictive devices
    • H10N35/101—Magnetostrictive devices with mechanical input and electrical output, e.g. generators, sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0052—Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N35/00—Magnetostrictive devices
    • H10N35/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N35/00—Magnetostrictive devices
    • H10N35/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Hall/Mr Elements (AREA)
NLAANVRAGE8520325,A 1985-05-10 1985-10-14 Magneto-elektrische transducent. NL188488C (nl)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP60099396A JPS61256777A (ja) 1985-05-10 1985-05-10 磁電変換素子およびその製造方法
JP9939585 1985-05-10
JP9939685 1985-05-10
JP60099395A JPS61256776A (ja) 1985-05-10 1985-05-10 磁電変換素子
JP11015585 1985-05-24
JP60110155A JPS61269386A (ja) 1985-05-24 1985-05-24 磁電変換素子
JP8500572 1985-10-14
PCT/JP1985/000572 WO1986006878A1 (fr) 1985-05-10 1985-10-14 Element convetisseur magneto-electrique

Publications (3)

Publication Number Publication Date
NL8520325A NL8520325A (nl) 1987-04-01
NL188488B NL188488B (nl) 1992-02-03
NL188488C true NL188488C (nl) 1992-07-01

Family

ID=27308949

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE8520325,A NL188488C (nl) 1985-05-10 1985-10-14 Magneto-elektrische transducent.

Country Status (5)

Country Link
US (1) US4908685A (en:Method)
KR (1) KR910002313B1 (en:Method)
DE (2) DE3590792T (en:Method)
NL (1) NL188488C (en:Method)
WO (1) WO1986006878A1 (en:Method)

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6756670B1 (en) * 1988-08-26 2004-06-29 Semiconductor Energy Laboratory Co., Ltd. Electronic device and its manufacturing method
FR2648941B1 (fr) * 1989-06-27 1991-09-06 Thomson Csf Tete de lecture magnetique a effet hall
WO1991014288A1 (en) * 1990-03-07 1991-09-19 Santa Barbara Research Center Magnetoresistor structure and operating method
JP2557998B2 (ja) * 1990-04-04 1996-11-27 旭化成工業株式会社 ＩｎＡｓホール効果素子
US5216405A (en) * 1991-01-14 1993-06-01 General Motors Corporation Package for the magnetic field sensitive device
JPH04360536A (ja) * 1991-06-07 1992-12-14 Sony Corp アルミニウム・ゲルマニウム合金膜のゲルマニウムの除去方法
JPH0737706A (ja) * 1993-07-19 1995-02-07 Murata Mfg Co Ltd 半導体セラミック素子
US6153318A (en) 1996-04-30 2000-11-28 Rothberg; Gerald M. Layered material having properties that are variable by an applied electric field
JP3031268B2 (ja) * 1996-11-20 2000-04-10 株式会社村田製作所 磁器コンデンサ
US5963028A (en) * 1997-08-19 1999-10-05 Allegro Microsystems, Inc. Package for a magnetic field sensing device
US6391675B1 (en) 1998-11-25 2002-05-21 Raytheon Company Method and apparatus for switching high frequency signals
JP2002026419A (ja) * 2000-07-07 2002-01-25 Sanken Electric Co Ltd 磁電変換装置
JP3678195B2 (ja) * 2001-12-18 2005-08-03 株式会社村田製作所 電子部品の製造方法、及び電子部品
WO2003090289A1 (fr) * 2002-04-19 2003-10-30 Asahi Kasei Electronics Co., Ltd. Transducteur magnetoelectrique et son procede de fabrication
EP1367644A1 (en) * 2002-05-29 2003-12-03 STMicroelectronics S.r.l. Semiconductor electronic device and method of manufacturing thereof
US20040036171A1 (en) * 2002-08-22 2004-02-26 Farnworth Warren M. Method and apparatus for enabling a stitch wire bond in the absence of discrete bump formation, semiconductor device assemblies and electronic systems including same
WO2004077585A1 (ja) * 2003-02-26 2004-09-10 Asahi Kasei Electronics Co., Ltd. 半導体センサ及びその製造方法
WO2004105132A1 (en) * 2003-05-20 2004-12-02 Axalto Sa An electrical connection for a microelectronic chip, and a method for manufacturing such a connection
EP1580568A3 (en) * 2004-03-24 2012-09-19 Yamaha Corporation Semiconductor device, magnetic sensor, and magnetic sensor unit
US7459340B2 (en) * 2004-12-14 2008-12-02 Casio Computer Co., Ltd. Semiconductor device and manufacturing method thereof
JPWO2006070826A1 (ja) * 2004-12-28 2008-08-07 旭化成エレクトロニクス株式会社 磁気方式回転角センサ、および、角度情報処理装置
EP2960667A1 (en) * 2006-04-13 2015-12-30 Asahi Kasei EMD Corporation Magnetic sensor and method for fabricating the same
US7816772B2 (en) * 2007-03-29 2010-10-19 Allegro Microsystems, Inc. Methods and apparatus for multi-stage molding of integrated circuit package
US9823090B2 (en) 2014-10-31 2017-11-21 Allegro Microsystems, Llc Magnetic field sensor for sensing a movement of a target object
US8486755B2 (en) 2008-12-05 2013-07-16 Allegro Microsystems, Llc Magnetic field sensors and methods for fabricating the magnetic field sensors
JP2010141112A (ja) * 2008-12-11 2010-06-24 Sharp Corp 半導体装置および半導体装置の製造方法
US20100188078A1 (en) * 2009-01-28 2010-07-29 Andrea Foletto Magnetic sensor with concentrator for increased sensing range
CN101924046A (zh) * 2009-06-16 2010-12-22 飞思卡尔半导体公司 在半导体器件中形成引线键合的方法
DE112009005044B4 (de) * 2009-07-08 2014-04-30 Toyota Jidosha Kabushiki Kaisha Halbleitervorrichtung und Verfahren zu deren Herstellung
JP2013051459A (ja) * 2011-08-30 2013-03-14 Canon Inc 電気機械変換装置及びその製造方法
US8629539B2 (en) 2012-01-16 2014-01-14 Allegro Microsystems, Llc Methods and apparatus for magnetic sensor having non-conductive die paddle
US10234513B2 (en) 2012-03-20 2019-03-19 Allegro Microsystems, Llc Magnetic field sensor integrated circuit with integral ferromagnetic material
US9666788B2 (en) 2012-03-20 2017-05-30 Allegro Microsystems, Llc Integrated circuit package having a split lead frame
US9812588B2 (en) 2012-03-20 2017-11-07 Allegro Microsystems, Llc Magnetic field sensor integrated circuit with integral ferromagnetic material
US9494660B2 (en) 2012-03-20 2016-11-15 Allegro Microsystems, Llc Integrated circuit package having a split lead frame
US10215550B2 (en) 2012-05-01 2019-02-26 Allegro Microsystems, Llc Methods and apparatus for magnetic sensors having highly uniform magnetic fields
US9817078B2 (en) 2012-05-10 2017-11-14 Allegro Microsystems Llc Methods and apparatus for magnetic sensor having integrated coil
US10725100B2 (en) 2013-03-15 2020-07-28 Allegro Microsystems, Llc Methods and apparatus for magnetic sensor having an externally accessible coil
US9411025B2 (en) 2013-04-26 2016-08-09 Allegro Microsystems, Llc Integrated circuit package having a split lead frame and a magnet
KR101768254B1 (ko) * 2013-06-12 2017-08-16 매그나칩 반도체 유한회사 반도체 기반의 자기 센서 및 그 제조 방법
US10495699B2 (en) 2013-07-19 2019-12-03 Allegro Microsystems, Llc Methods and apparatus for magnetic sensor having an integrated coil or magnet to detect a non-ferromagnetic target
US10145908B2 (en) 2013-07-19 2018-12-04 Allegro Microsystems, Llc Method and apparatus for magnetic sensor producing a changing magnetic field
US9810519B2 (en) 2013-07-19 2017-11-07 Allegro Microsystems, Llc Arrangements for magnetic field sensors that act as tooth detectors
KR102116147B1 (ko) * 2014-03-06 2020-05-28 매그나칩 반도체 유한회사 매립형 마그네틱 센서
US9720054B2 (en) 2014-10-31 2017-08-01 Allegro Microsystems, Llc Magnetic field sensor and electronic circuit that pass amplifier current through a magnetoresistance element
US9823092B2 (en) 2014-10-31 2017-11-21 Allegro Microsystems, Llc Magnetic field sensor providing a movement detector
US9719806B2 (en) 2014-10-31 2017-08-01 Allegro Microsystems, Llc Magnetic field sensor for sensing a movement of a ferromagnetic target object
US10712403B2 (en) 2014-10-31 2020-07-14 Allegro Microsystems, Llc Magnetic field sensor and electronic circuit that pass amplifier current through a magnetoresistance element
GB2535683A (en) * 2014-11-03 2016-08-31 Melexis Technologies Nv Magnetic field sensor and method for making same
US11067643B2 (en) 2014-11-03 2021-07-20 Melexis Technologies Nv Magnetic field sensor and method for making same
US10260905B2 (en) 2016-06-08 2019-04-16 Allegro Microsystems, Llc Arrangements for magnetic field sensors to cancel offset variations
US10012518B2 (en) 2016-06-08 2018-07-03 Allegro Microsystems, Llc Magnetic field sensor for sensing a proximity of an object
US10041810B2 (en) 2016-06-08 2018-08-07 Allegro Microsystems, Llc Arrangements for magnetic field sensors that act as movement detectors
US10996289B2 (en) 2017-05-26 2021-05-04 Allegro Microsystems, Llc Coil actuated position sensor with reflected magnetic field
US11428755B2 (en) 2017-05-26 2022-08-30 Allegro Microsystems, Llc Coil actuated sensor with sensitivity detection
US10641842B2 (en) 2017-05-26 2020-05-05 Allegro Microsystems, Llc Targets for coil actuated position sensors
US10837943B2 (en) 2017-05-26 2020-11-17 Allegro Microsystems, Llc Magnetic field sensor with error calculation
US10310028B2 (en) 2017-05-26 2019-06-04 Allegro Microsystems, Llc Coil actuated pressure sensor
US10324141B2 (en) 2017-05-26 2019-06-18 Allegro Microsystems, Llc Packages for coil actuated position sensors
US10866117B2 (en) 2018-03-01 2020-12-15 Allegro Microsystems, Llc Magnetic field influence during rotation movement of magnetic target
US10921391B2 (en) 2018-08-06 2021-02-16 Allegro Microsystems, Llc Magnetic field sensor with spacer
US11255700B2 (en) 2018-08-06 2022-02-22 Allegro Microsystems, Llc Magnetic field sensor
US10823586B2 (en) 2018-12-26 2020-11-03 Allegro Microsystems, Llc Magnetic field sensor having unequally spaced magnetic field sensing elements
US11061084B2 (en) 2019-03-07 2021-07-13 Allegro Microsystems, Llc Coil actuated pressure sensor and deflectable substrate
US10955306B2 (en) 2019-04-22 2021-03-23 Allegro Microsystems, Llc Coil actuated pressure sensor and deformable substrate
US10991644B2 (en) 2019-08-22 2021-04-27 Allegro Microsystems, Llc Integrated circuit package having a low profile
US11280637B2 (en) 2019-11-14 2022-03-22 Allegro Microsystems, Llc High performance magnetic angle sensor
US11237020B2 (en) 2019-11-14 2022-02-01 Allegro Microsystems, Llc Magnetic field sensor having two rows of magnetic field sensing elements for measuring an angle of rotation of a magnet
US11262422B2 (en) 2020-05-08 2022-03-01 Allegro Microsystems, Llc Stray-field-immune coil-activated position sensor
US11493361B2 (en) 2021-02-26 2022-11-08 Allegro Microsystems, Llc Stray field immune coil-activated sensor
US11578997B1 (en) 2021-08-24 2023-02-14 Allegro Microsystems, Llc Angle sensor using eddy currents
US12523717B2 (en) 2024-02-15 2026-01-13 Allegro Microsystems, Llc Closed loop magnetic field sensor with current control

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50126389A (en:Method) * 1974-03-25 1975-10-04
US3964666A (en) * 1975-03-31 1976-06-22 Western Electric Company, Inc. Bonding contact members to circuit boards
US4000842A (en) * 1975-06-02 1977-01-04 National Semiconductor Corporation Copper-to-gold thermal compression gang bonding of interconnect leads to semiconductive devices
JPS51147191A (en) * 1975-06-12 1976-12-17 Asahi Chem Ind Co Ltd Hall element and its method of manufacturing
US4296424A (en) * 1978-03-27 1981-10-20 Asahi Kasei Kogyo Kabushiki Kaisha Compound semiconductor device having a semiconductor-converted conductive region
US4609936A (en) * 1979-09-19 1986-09-02 Motorola, Inc. Semiconductor chip with direct-bonded external leadframe

Also Published As

Publication number Publication date
KR910002313B1 (ko) 1991-04-11
US4908685A (en) 1990-03-13
KR870700275A (ko) 1987-08-20
NL8520325A (nl) 1987-04-01
NL188488B (nl) 1992-02-03
WO1986006878A1 (fr) 1986-11-20
DE3590792C2 (en:Method) 1991-05-23
DE3590792T (en:Method) 1987-07-16

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V4 Discontinued because of reaching the maximum lifetime of a patent

Effective date: 20051014