NL186662C - Werkwijze ter vervaardiging van een halfgeleiderinrichting. - Google Patents

Werkwijze ter vervaardiging van een halfgeleiderinrichting.

Info

Publication number
NL186662C
NL186662C NLAANVRAGE8002492,A NL8002492A NL186662C NL 186662 C NL186662 C NL 186662C NL 8002492 A NL8002492 A NL 8002492A NL 186662 C NL186662 C NL 186662C
Authority
NL
Netherlands
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
NLAANVRAGE8002492,A
Other languages
English (en)
Dutch (nl)
Other versions
NL8002492A (nl
NL186662B (nl
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NLAANVRAGE8002492,A priority Critical patent/NL186662C/xx
Priority to GB8111623A priority patent/GB2075257B/en
Priority to CA000376122A priority patent/CA1165012A/en
Priority to US06/257,672 priority patent/US4466171A/en
Priority to DE3116268A priority patent/DE3116268C2/de
Priority to IT21369/81A priority patent/IT1137566B/it
Priority to IE936/81A priority patent/IE51323B1/en
Priority to AU69875/81A priority patent/AU544817B2/en
Priority to CH2735/81A priority patent/CH655202A5/de
Priority to FR8108317A priority patent/FR2481518A1/fr
Priority to JP6616481A priority patent/JPS571260A/ja
Publication of NL8002492A publication Critical patent/NL8002492A/nl
Publication of NL186662B publication Critical patent/NL186662B/xx
Application granted granted Critical
Publication of NL186662C publication Critical patent/NL186662C/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0688—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions characterised by the particular shape of a junction between semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
NLAANVRAGE8002492,A 1980-04-29 1980-04-29 Werkwijze ter vervaardiging van een halfgeleiderinrichting. NL186662C (nl)

Priority Applications (11)

Application Number Priority Date Filing Date Title
NLAANVRAGE8002492,A NL186662C (nl) 1980-04-29 1980-04-29 Werkwijze ter vervaardiging van een halfgeleiderinrichting.
GB8111623A GB2075257B (en) 1980-04-29 1981-04-13 Semiconductor device manufacture
CA000376122A CA1165012A (en) 1980-04-29 1981-04-23 Method of manufacturing a semiconductor device
DE3116268A DE3116268C2 (de) 1980-04-29 1981-04-24 Verfahren zur Herstellung einer Halbleiteranordnung
IT21369/81A IT1137566B (it) 1980-04-29 1981-04-24 Metodo di fabbricazione di un dispositivo semiconduttore
US06/257,672 US4466171A (en) 1980-04-29 1981-04-24 Method of manufacturing a semiconductor device utilizing outdiffusion to convert an epitaxial layer
IE936/81A IE51323B1 (en) 1980-04-29 1981-04-27 Method of manufacturing a semiconductor device
AU69875/81A AU544817B2 (en) 1980-04-29 1981-04-27 Diffusion from buried to epitaxial layer
CH2735/81A CH655202A5 (de) 1980-04-29 1981-04-27 Verfahren zur herstellung einer halbleiteranordnung.
FR8108317A FR2481518A1 (fr) 1980-04-29 1981-04-27 Procede de realisation d'un dispositif semiconducteur comportant des transistors a effet de champ complementaires
JP6616481A JPS571260A (en) 1980-04-29 1981-04-30 Semiconductor device and method of manufacturing same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8002492 1980-04-29
NLAANVRAGE8002492,A NL186662C (nl) 1980-04-29 1980-04-29 Werkwijze ter vervaardiging van een halfgeleiderinrichting.

Publications (3)

Publication Number Publication Date
NL8002492A NL8002492A (nl) 1981-12-01
NL186662B NL186662B (nl) 1990-08-16
NL186662C true NL186662C (nl) 1992-03-16

Family

ID=19835227

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE8002492,A NL186662C (nl) 1980-04-29 1980-04-29 Werkwijze ter vervaardiging van een halfgeleiderinrichting.

Country Status (11)

Country Link
US (1) US4466171A (xx)
JP (1) JPS571260A (xx)
AU (1) AU544817B2 (xx)
CA (1) CA1165012A (xx)
CH (1) CH655202A5 (xx)
DE (1) DE3116268C2 (xx)
FR (1) FR2481518A1 (xx)
GB (1) GB2075257B (xx)
IE (1) IE51323B1 (xx)
IT (1) IT1137566B (xx)
NL (1) NL186662C (xx)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8104862A (nl) * 1981-10-28 1983-05-16 Philips Nv Halfgeleiderinrichting, en werkwijze ter vervaardiging daarvan.
DE3149185A1 (de) * 1981-12-11 1983-06-23 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung benachbarter mit dotierstoffionen implantierter wannen bei der herstellung von hochintegrierten komplementaeren mos-feldeffekttransistorschaltungen
JPS5994861A (ja) * 1982-11-24 1984-05-31 Hitachi Ltd 半導体集積回路装置及びその製造方法
NL188923C (nl) * 1983-07-05 1992-11-02 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting.
US4683488A (en) * 1984-03-29 1987-07-28 Hughes Aircraft Company Latch-up resistant CMOS structure for VLSI including retrograded wells
US4554726A (en) * 1984-04-17 1985-11-26 At&T Bell Laboratories CMOS Integrated circuit technology utilizing dual implantation of slow and fast diffusing donor ions to form the n-well
US4727044A (en) 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
US4677739A (en) * 1984-11-29 1987-07-07 Texas Instruments Incorporated High density CMOS integrated circuit manufacturing process
US4578128A (en) * 1984-12-03 1986-03-25 Ncr Corporation Process for forming retrograde dopant distributions utilizing simultaneous outdiffusion of dopants
JPH0648716B2 (ja) * 1985-11-30 1994-06-22 ヤマハ株式会社 集積回路装置の製法
ATE58030T1 (de) * 1986-06-10 1990-11-15 Siemens Ag Verfahren zum herstellen von hochintegrierten komplementaeren mosfeldeffekttransistorschaltungen.
US4743563A (en) * 1987-05-26 1988-05-10 Motorola, Inc. Process of controlling surface doping
US4728619A (en) * 1987-06-19 1988-03-01 Motorola, Inc. Field implant process for CMOS using germanium
JPH01161752A (ja) * 1987-12-18 1989-06-26 Toshiba Corp 半導体装置製造方法
US4925806A (en) * 1988-03-17 1990-05-15 Northern Telecom Limited Method for making a doped well in a semiconductor substrate
US5181094A (en) * 1988-09-29 1993-01-19 Mitsubishi Denki Kabushiki Kaisha Complementary semiconductor device having improved device isolating region
US5454258A (en) * 1994-05-09 1995-10-03 Olin Corporation Broad range moisture analyzer and method
US5556796A (en) * 1995-04-25 1996-09-17 Micrel, Inc. Self-alignment technique for forming junction isolation and wells
JP4677166B2 (ja) * 2002-06-27 2011-04-27 三洋電機株式会社 半導体装置及びその製造方法
US7504156B2 (en) 2004-04-15 2009-03-17 Avery Dennison Corporation Dew resistant coatings

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3928091A (en) * 1971-09-27 1975-12-23 Hitachi Ltd Method for manufacturing a semiconductor device utilizing selective oxidation
US3865654A (en) * 1972-11-01 1975-02-11 Ibm Complementary field effect transistor having p doped silicon gates and process for making the same
US3793088A (en) * 1972-11-15 1974-02-19 Bell Telephone Labor Inc Compatible pnp and npn devices in an integrated circuit
US4099998A (en) * 1975-11-03 1978-07-11 General Electric Company Method of making zener diodes with selectively variable breakdown voltages
JPS5286083A (en) * 1976-01-12 1977-07-16 Hitachi Ltd Production of complimentary isolation gate field effect transistor
JPS5370679A (en) * 1976-12-06 1978-06-23 Nippon Gakki Seizo Kk Transistor
JPS5413779A (en) * 1977-07-04 1979-02-01 Toshiba Corp Semiconductor integrated circuit device
US4151010A (en) * 1978-06-30 1979-04-24 International Business Machines Corporation Forming adjacent impurity regions in a semiconductor by oxide masking
US4168997A (en) * 1978-10-10 1979-09-25 National Semiconductor Corporation Method for making integrated circuit transistors with isolation and substrate connected collectors utilizing simultaneous outdiffusion to convert an epitaxial layer
US4373253A (en) * 1981-04-13 1983-02-15 National Semiconductor Corporation Integrated CMOS process with JFET

Also Published As

Publication number Publication date
GB2075257A (en) 1981-11-11
CH655202A5 (de) 1986-03-27
CA1165012A (en) 1984-04-03
NL8002492A (nl) 1981-12-01
AU544817B2 (en) 1985-06-13
NL186662B (nl) 1990-08-16
US4466171A (en) 1984-08-21
IE810936L (en) 1981-10-29
DE3116268C2 (de) 1986-03-20
JPS571260A (en) 1982-01-06
IE51323B1 (en) 1986-12-10
IT8121369A0 (it) 1981-04-24
GB2075257B (en) 1984-06-06
FR2481518B1 (xx) 1984-11-09
IT8121369A1 (it) 1982-10-24
IT1137566B (it) 1986-09-10
FR2481518A1 (fr) 1981-10-30
DE3116268A1 (de) 1982-05-19
AU6987581A (en) 1981-11-05

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Legal Events

Date Code Title Description
A1B A search report has been drawn up
BC A request for examination has been filed
A85 Still pending on 85-01-01
R1VN Request for mentioning name(s) of the inventor(s) in the patent or request for changing the name(s) of inventor(s) with respec
NP1 Patent granted (not automatically)
V1 Lapsed because of non-payment of the annual fee